首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   5096篇
  免费   852篇
  国内免费   1122篇
化学   4273篇
晶体学   63篇
力学   332篇
综合类   81篇
数学   543篇
物理学   1778篇
  2024年   18篇
  2023年   101篇
  2022年   189篇
  2021年   214篇
  2020年   218篇
  2019年   235篇
  2018年   173篇
  2017年   185篇
  2016年   251篇
  2015年   272篇
  2014年   281篇
  2013年   395篇
  2012年   428篇
  2011年   472篇
  2010年   361篇
  2009年   331篇
  2008年   373篇
  2007年   318篇
  2006年   286篇
  2005年   265篇
  2004年   182篇
  2003年   167篇
  2002年   231篇
  2001年   206篇
  2000年   154篇
  1999年   133篇
  1998年   106篇
  1997年   80篇
  1996年   47篇
  1995年   56篇
  1994年   62篇
  1993年   47篇
  1992年   52篇
  1991年   54篇
  1990年   27篇
  1989年   20篇
  1988年   17篇
  1987年   11篇
  1986年   10篇
  1985年   13篇
  1984年   7篇
  1983年   9篇
  1982年   5篇
  1981年   4篇
  1980年   2篇
  1957年   1篇
  1943年   1篇
排序方式: 共有7070条查询结果,搜索用时 15 毫秒
101.
等离子体反应器中传热与流动的三维数值模拟   总被引:4,自引:0,他引:4  
本文采用我们新发展的三维计算机程序,对有载气和颗粒从单个喷孔侧向喷射的等离子体反应器中的传热与流动以及颗粒的运动轨迹与加热历程进行了三维数值模拟,并与相应的二维数值模拟结果进行了比较。模拟结果表明侧向喷入的载气所引起的三维流动效应相当明显,不同的颗粒在反应器内的运动轨迹与加热历程也有明显差别。  相似文献   
102.
The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO2. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.  相似文献   
103.
报道了一种鲁米诺的衍生物-3-(1-乙酰丙酮偶氮)苯二甲酰肼在酸性介质中的电化学发光行为,该化合物与鲁米诺类似,发生两步电化学氧化反应,但其氧化电位较鲁米诺低约0.5V,在氧化铟锡玻璃电极上具有良好的电化学发光性能,有效地避免了氧化铟锡玻璃电极本身的发光干扰.不仅在碱性介质中具有较高的电化学发光效率,而且在酸性介质中也产生较稳定的电化学发光,在1.0×10-6mol/L以上浓度,电化学发光强度与浓度有良好的线性关系.  相似文献   
104.
An improved generalized admittance (GAM) matrix technique is presented in this paper. Matrix transformation eliminates the singularity factor of GAM, denominator (1+Γ), because of new presentations of GAM. The relationship equations between II-port current and I-port incidence wave is computed by mode matching method. The generalized scattering matrix (GSM) of waveguide structure and its discontinuity problems is obtained with relationship equations and reflection coefficients. The GSM’s of millimeter-wave multistepped bend and T-junction in rectangular waveguide are computed by the improved GAM technique. The results comparisons between the proposed method and commercial software HFSS10.0 show the validity of the proposed method, which improves the validity of the GAM technique and reduces mathematical efforts. It is general, very efficient and can be used to solve other complicated and multiport network problems.  相似文献   
105.
聚合物纳米孔隙增透膜制备工艺的研究   总被引:4,自引:0,他引:4  
杨振宇  朱大庆  赵茗  金曦  孙涛 《光学学报》2006,26(1):52-156
论述了聚合物纳米孔隙增透膜的制备工艺流程,分析了聚合物材料分子量、实验环境温度和湿度、溶剂挥发性等条件对纳米孔隙增透膜的影响。研究表明,聚合物材料分子量的增大、温度的降低、湿度的升高以及采用挥发性弱的溶剂都将导致增透膜孔隙尺寸的增大,孔隙越大其对光的散射损耗就会增大,所以增透膜的透过率就越低。通过大量的试验分析得出一组较理想的工艺参量:使用低分子量的聚合物材料(小于15 kg/mol),环境温度大于25℃、环境相对湿度小于30%,在采用低沸点的溶剂如四氢呋喃等措施下可有效降低增透膜散射损耗。  相似文献   
106.
The behavior of copper precipitation in cast multicrystalline silicon (mc-Si) annealed at different temperatures under air cooling (30 K/s) or slow cooling (0.3 K/s) was investigated by scanning infrared microscopy (SIRM). Comparing to Czochralski-grown silicon (Cz-Si), copper precipitated more easily in mc-Si, and the lowest temperature of copper precipitation in mc-Si was about 700 °C, lower than that in Cz-Si. It was also observed that copper preferably precipitated on grain boundaries so that near the grain boundaries the denuded zone formed. The results indicate that the defects including dislocations, grain boundaries and microdefects, as the heteronucleation sites, enhanced copper precipitation. Moreover, cooling rates had a great influence on the copper precipitation, especially at lower annealing temperatures. Generally air cooling led to the formation of high density of copper-precipitate colonies.  相似文献   
107.
108.
席丽霞  李建平  杜树成  徐霞  张晓光 《中国物理 B》2011,20(2):24214-024214
Phase and amplitude regeneration are necessary for degraded differential phase-shift keying communication systems.This paper proposes a regenerator based on semiconductor optical amplifier for differential phase-shift keying signals.The key regeneration mechanism is theoretically analysed.The effectiveness of semiconductor optical amplifier based regenerator is demonstrated by comparing the bit error rate and eye diagrams before and after regeneration for 40-Gbit/s differential phase-shift keying 1080-km transmission systems.The results show that regeneration effects are very well.Bit error rate is less than 10 12 with the regenerator.  相似文献   
109.
The interaction of CdSe/CdS quantum dots (QDs) with Herring sperm-DNA (hs-DNA) has been studied by UV-vis spectroscopy and electrochemical method. Cu(phen)22+/1+ (phen = 1, 10-phenanthroline) was used as an indicator for electroactive dsDNA or ssDNA. The apparent association constant has been deduced (4.94 × 103 M−1 and 2.39 × 102 M−1) from the absorption spectral changes of the dsDNA-QDs and ssDNA-QDs. The results of dissociation method suggest that Cu(phen)22+/1+ is more easily dissociated from dsDNA or ssDNA modified gold electrode (dsDNA/Au or dsDNA/Au) in presence of QDs. The dissociation rate constant (k) of Cu(phen)22+/1+ on dsDNA/Au is 4.48 times higher than that in absence of QDs, while k is 2.34 times higher than that in absence of QDs on ssDNA/Au in Tris buffer with low ionic strength (pH 7.0, 0.5 mM NaCl). The results illuminate that hs-DNA has high affinity for QDs due to electrostatic force, hydrogen bonds, and van der Waals interactions, and the binding force of QDs with dsDNA is stronger than ssDNA.  相似文献   
110.
Li W  Ran SJ  Gong SS  Zhao Y  Xi B  Ye F  Su G 《Physical review letters》2011,106(12):127202
A linearized tensor renormalization group algorithm is developed to calculate the thermodynamic properties of low-dimensional quantum lattice models. This new approach employs the infinite time-evolving block decimation technique, and allows for treating directly the transfer-matrix tensor network that makes it more scalable. To illustrate the performance, the thermodynamic quantities of the quantum XY spin chain as well as the Heisenberg antiferromagnet on a honeycomb lattice are calculated by the linearized tensor renormalization group method, showing the pronounced precision and high efficiency.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号