Schmidt analysis of pure-state entanglement

We examine the application of Schmidt mode analysis to pure-state entanglement. Several examples permitting exact analytic calculation of Schmidt eigenvalues and eigenfunctions are included, as well as evaluation of the associated degree of entanglement.     

Observation of the nonlinear effect in relativistic Thomson scattering of electron and laser beams

Thomson scattering of high-power laser and electron beams is a good test of electrodynamics in the high-field region. We demonstrated production of high-intensity X-rays in the head-on collision of a CO₂ laser and 60-MeV electron beams at Brookhaven National Laboratory, Accelerator Test Facility. The energy of an X-ray photon was limited at 6.5 keV in the linear (lowest order) Thomson scattering, but the nonlinear (higher order) process produces higher energy X-rays. We measured the angular distribution of the high-energy X-rays and confirmed that it agrees with theoretical predictions.     

Advantages of NIR radiation use for optical determination of skin horny layer thickness with embedded TiO2 nanoparticles during tape stripping procedure

The tape stripping technique is an experimental method frequently used for reconstruction of the in-depth distribution of various topically administered substances within the horny layer of human skin, e.g., compounds contained in sunscreens. Titanium dioxide (TiO₂) nanoparticles (25–200 nm in diameter) are one such compound. Optical techniques which apply blue light are found to be suitable for reconstruction. However, the presence of particles affects the light propagation within the skin and therefore causes incorrect determination of strip thickness, leading to an improper reconstructed distribution of nanoparticle concentration revealed from the experimental data. This study evaluates the errors emerging from the use of blue (400 nm) and NIR (800 nm) radiation and finds the use of longer wavelength light more advantageous. Particles of different diameters are considered, and it is revealed that the application of small particles (25–60 nm) results in the lowest rate of error.     

Stereocontrolled spirocyclic bislactams derived from pyroglutamic acid

The synthesis of rigid spirocyclic bislactams derived from pyroglutamic acid has been established.     

Zone specificity in low energy electron stimulated desorption of Cl from reconstructed Si(1 1 1)-7 × 7:Cl surfaces

Diffraction in electron stimulated desorption has revealed a propensity for Cl⁺ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.     

Hankel convolution operators on entire functions and distributions

In this paper we study the Hankel convolution operators on the space of even and entire functions and on Schwartz distribution spaces. We characterize the Hankel convolution operators as those ones that commute with Hankel translations and with a Bessel operator. Also we prove that the Hankel convolution operators are hypercyclic and chaotic on the spaces under consideration.     

The operational performance of the Yale ESTU

The ESTU began operation in 1988 and achieved the design voltage of 20 MV in 1990. Since that time, improvements to the gas handling system, negative ion injector, accelerator terminal and control system have greatly increased its capability and reliability. Today, the ESTU can efficiently produce an extensive assortment of stable ions at wide-ranging energies in support of low-energy nuclear physics.     

Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection

In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N₂) or oxidizing (O₂) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N₂-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed. Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002     

Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions

We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra. Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001     

The Lefschetz number of an involution on the space of harmonic cusp forms ofSL 3

Inventiones mathematicae -