分布式喇曼光纤放大器在光传输系统中的应用

就分布式喇曼光纤放大器独特的低噪声和灵活的功率调整性质进行了分析，并就它在系统中的应用作了简单的介绍。     

Effect of H impurity on misfit dislocation in Ni-based single-crystal superalloy： molecular dynamic simulations

The effect of H impurity on the misfit dislocation in Ni-based single-crystal superalloy is investigated using the molecular dynamic simulation.It includes the site preferences of H impurity in single crystals Ni and Ni 3 Al,the interaction between H impurity and the misfit dislocation and the effect of H impurity on the moving misfit dislocation.The calculated energies and simulation results show that the misfit dislocation attracts H impurity which is located at the γ/γˊinterface and Ni₃ Al and H impurity on the glide plane can obstruct the glide of misfit dislocation,which is beneficial to improving the mechanical properties of Ni based superalloys.     

准等熵压缩实验中金属铝的热力学耗散分析

为获取高压下材料的纯热力学压力-比容参考线和完全物态方程,减去应力-应变曲线中的其它信息,对准等熵压缩实验中由加载应变率引起的黏性耗散和热传导引起的热耗散做了分析讨论。基于反积分计算和流体动力学积分计算相结合的方法,根据激光加载(约108 s-1)和磁驱动准等熵压缩(约105 s-1)的实验数据,对材料声速、应力-应变曲线、温度和熵增等物理量进行计算,分析了不同应变率与该物理量的关系;还对热传导和SCG本构模型进行了计算,分析了热传导引起的温度变化对材料屈服强度、剪切模量和拉格朗日声速的影响。结果表明:激光加载实验中,应变率引起的温升差异约为180K,熵增差异约为250J/(kg·K),热传导导致温度下降40K;磁驱动准等熵压缩应变率较低,引起的熵增变化小于8J/(kg·K)。     

基于尺度质心统计的纹理分析

结合目前纹理分析的三类算法,提出了尺度质心统计的分析算法。该算法以具有多分辨率特性的小波包为基础,结合结构法的纹理元分析方式,采用区域质心完成局部特征提取,最后使用投影法进行整体的特征提取。实验证明,尺度质心统计取得了令人满意的纹理分析效果。     

新型脱硅剂水合碳铁酸钙合成过程的光谱学研究

亚熔盐溶出一水硬铝石型铝土矿过程中需在高浓介质条件下脱除二氧化硅杂质,研究采用合成水合碳铁酸钙做为脱硅剂;因水合碳铁酸钙合成过程中会有碳酸钙、氢氧化钙、铁酸钙等副产物,故合成条件对水合碳铁酸钙含量及脱硅效果有重要影响。为了探讨反应机理并优化合成参数, 研究采用傅里叶变换红外光谱(FTIR)、电感耦合等离子发射光谱(ICP-AES)分析对合成过程产物进行了物相分析和脱硅实验。FTIR和脱硅过程元素分析表明水合碳铁酸钙在水溶液中为介稳物质,反应温度和反应时间对水合碳铁酸钙的合成具有重要影响,随时间和温度增加水合碳铁酸钙含量先增加后减少;单因素条件下最优的合成条件为, 反应温度30 ℃,反应时间16 h,反应液固比20,搅拌强度500 r·min-1;对最优条件下合成水合碳铁酸钙的物相结构进行了研究,表明水合碳铁酸钙为斜方六面体晶体结构,其中存在结晶水、羟基、Fe—O特征峰。     

Design of a multi-cusp ion source for proton therapy

The permanent magnets of the discharge chamber in a multi-cusp proton source are studied and designed. The three electrode extraction system is adopted and simulated. A method to extract different amounts of current while keeping the beam emittance unchanged is proposed.     

铜铟镓硒太阳能电池多层膜的结构分析

对于溅射后硒化和共蒸发等方法制备的铜铟镓硒（CIGS）太阳能电池薄膜,利用多种分析方法研究了CIGS多层膜的复杂结构等．研究表明：卢瑟福背散射（RBS）在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析（AES）均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS,Mo与CIGS的界面处;X射线荧光（XRF）结果表明,电池效率最高的CIGS层中In,Ga比例为In：Ga=0．7：0.3;X射线衍射（XRD）结果显示：退火后的CIGS／Mo薄膜结晶品质得到了优化．     

Study of depth-dependent tetragonal distortion of quaternary AIInGaN epilayer by Rutherford backscattering/channeling

<正>A 240-nm thick Al_0.4In_0.02Ga_0.58N layer is grown by metal organic chemical vapour deposition,with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire（0001）.Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN.The results show a good crystalline quality of AlInGaN(x_min= 1.5%) with GaN buffer layer.The channeling angular scan around an off-normal（1213） axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion e_T,which is caused by the elastic strain in the AlInGaN.The resulting AlInGaN is subjected to an elastic strain at interfacial layer,and the strain decreases gradually towards the near-surface layer.It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （e_T=0）.     

基于串行最小频移键控的8进制调制的研究

提出了一种新型的基于串行结构的最小频移键控调制技术,产生了相位连续,频谱宽度窄,每码元时间有两次π/2相移,类似于传统最小频移键控调制信号,给出了该调制方案的理论推导,并将其应用于8进制的多维多阶调制系统中。理论和仿真分析了不同的8进制调制方案在频谱特性,残留色散容限,自相位调制容限的不同,还分析了其受到系统滤波带宽的影响。最后仿真实现了通过350km的色散完全补偿的光纤120Gb/s的数据传输。     

Mutually Unbiased Maximally Entangled Bases for the Bipartite System ℂd⊗ℂdk

The construction of maximally entangled bases for the bipartite system \(\mathbb {C}^{d}\otimes \mathbb {C}^{d}\) is discussed firstly, and some mutually unbiased bases with maximally entangled bases are given, where 2≤d≤5. Moreover, we study a systematic way of constructing mutually unbiased maximally entangled bases for the bipartite system \(\mathbb {C}^{d}\otimes \mathbb {C}^{d^{k}}\).