A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface

A metal-graphene hybrid metasurface polarization converter is designed in this Letter.The unit cell of the hybrid metasurface is composed of a butterfly-shaped structure whose branches are connected by multi-layer graphene sheets.The proposed device can be reconfigured from linear-to-circular polarization to cross-polarization by changing the Fermi energy of graphene.The simulation results show that for three-layer graphene,the device acts as a linear-to-circular polarization converter when EF=0 eV and switches to a cross-polarization converter when EF=0.5 eV.Compared with single-layer graphene,the device with three-layer graphene can maintain the cross-polarization conversion performance under low Fermi energy.Furthermore,two equivalent circuits in the x and y directions are developed to understand the working mechanism of the device.     

不同材料弹体超声速侵彻钢筋混凝土靶的结构破坏对比实验

设计了超声速钻地结构弹,采用203 mm口径的火炮,开展了25 kg量级弹体在1100~1300 m/s速度范围内侵彻钢筋混凝土靶的实验研究,应用数值仿真对弹体侵彻钢筋混凝土靶的过程进行了模拟计算。基于实验和仿真结果,对超声速侵彻条件下两种金属材料弹体的结构响应、质量损失等问题进行了分析。结果表明:在超声速侵彻钢筋混凝土靶的过程中,两种金属材料的弹体结构变形破坏形式主要为头部侵蚀和侧壁磨蚀,头部侵蚀量的大小与弹体壳体材料有关,高强度G50钢材料更适合用于1200 m/s速度量级的超声速侵彻环境。对出现的“径缩”现象作了初步分析,并对今后工程应用的结构弹体设计提出了指导意见。     

集合卡尔曼滤波在时变声速剖面追踪中的性能分析

对集合卡尔曼滤波在时变海洋环境下的声速剖面追踪性能进行了分析。将南海实验背景下普林斯顿海洋模型预报的声速剖面正交分解为3阶系数组成的状态-空间形式,其状态转移方程建模为3阶自回归过程;基于卡尔曼反馈理论,利用适合于水平非均匀模型RAM仿真的观测声压场对系统状态进行校正,实现声速剖面的动态追踪。在水平均匀、水平非均匀和海底参数失配环境下的仿真结果均能较好地实现对声速剖面的追踪,验证了算法的可行性。同时对不同信噪比、粒子数、阵元数和海底参数失配等情况下的分析表明,观测信息量的增加可以有效抑制观测误差和模型误差的影响,相关结论得到了实验数据的验证。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

三维格子Boltzmann方法研究上升双气泡的运动特性

应用格子Boltzmann三维模型，对双气泡在静水中的运动进行数值研究.采用八点差分和十八点差分格式分别求解一阶▽φ和二阶▽²φ可以有效避免气液密度比过大造成的数值不稳定问题.结果表明：当两个相同直径的气泡在上升时，位置靠上的气泡形状变化像单气泡上升一样，而位置靠下的气泡会受到前一个气泡尾迹的影响，并有很明显的形状变化.当两个气泡直径不同时，不管初始位置如何，大气泡总会对小气泡造成强烈的影响.     

Controllably asymmetric beam splitting via gap-induced diffraction channel transition in dual-layer binary metagratings

In this work, we designed and studied a feasible dual-layer binary metagrating, which can realize controllable asymmetric transmission and beam splitting with nearly perfect performance. Owing to ingenious geometry configuration, only one meta-atom is required to design for the metagrating system. By simply controlling air gap between dual-layer metagratings, high-efficiency beam splitting can be well switched from asymmetric transmission to symmetric transmission. The working principle lies on gap-induced diffraction channel transition for incident waves from opposite directions. The asymmetric/symmetric transmission can work in a certain frequency band and a wide incident range. Compared with previous methods using acoustic metasurfaces, our approach has the advantages of simple design and tunable property and shows promise for applications in wavefront manipulation, noise control and one-way propagation.     

基于石墨烯/石墨烯卷轴复合薄膜高灵敏度柔性压力传感器

一维导电材料例如纳米线,大量应用于柔性压力传感器中. 但是一维材料和基底之间接触时相互作用力较弱,使得传感器灵敏度、响应时间、和循环寿命等性能指标有待进一步提高. 针对这些问题,设计了石墨烯/石墨烯卷轴多分子层复合薄膜作为传感器导电层. 石墨烯卷轴具有一维结构,而石墨烯的二维结构可以牢固地固定卷轴,以确保高导电性复合薄膜与基底之间的粘附性,同时整体结构的导电通道得到了增加. 由于一维和二维结构的协同效应,实现了应变灵敏度系数3.5 kPa^-1、 响应时间小于50 ms、能够稳定工作1000次以上的压阻传感器.     

OCS经由F 31Π里德堡态生成CO(X1Σ+)+S(1D2)产物的波长相关性光解离

本文利用时间切片离子速度成像技术在134∽140 nm波段研究了OCS分子经由F 3¹Π里德堡态的真空紫外光解离动力学. 在选取的5个分别对应OCS(F 3¹Π, v₁=0∽4)的伸缩振动激发的光解波长,实验测得了来自CO(X¹Σ⁺)+S(¹D₂)产物通道的SS(¹D₂))实验影像,并获得了总平动能谱和CO(X¹Σ⁺, v)共生产物的振动布居及角分布. 结果分析表明OCS分子解离生成CO(X¹Σ⁺)+S(¹D₂)产物的过程经历了上态F 3¹Π 与C_?v和C_s构型的下电子态间非绝热耦合过程. 实验结果显示了很强的波长相关性：OCS (F 3¹Π, v₁)的较低转动激发态(v₁=0∽2)和较高转动激发态(v₁=3, 4)的CO(X¹Σ⁺)产物的振动布居和角分布具有显著差异,表明该解离过程中具有不同的解离机理. 本结果提供了振动耦合可能对真空紫外光解离动力学产生关键作用的相关证据.     

工质对微通道沸腾液膜瞬态变化的影响

本文采用去离子水和无水乙醇两种工质,利用微通道流动沸腾同步测量实验系统,研究了液膜厚度的瞬态变化规律,实验发现流动沸腾形成的初始液膜厚度在毛细数Ca很宽的范围内都遵循Taylor流动原理;液膜形成后,在蒸发和蒸汽流动携带的耦合作用下,厚度迅速减薄直至蒸干;由于水的汽液黏度比小,速度梯度小,剪切作用带来的液膜厚度减少量小,且水的汽化潜热大,吸收相同热量时蒸发量小,导致水的液膜厚度变化斜率较小,通过理论分析提出了沸腾液膜厚度变化的计算模型,计算结果与实验结果的误差小于20%。     

Structural phase transitions in Pd0.8 Si0.2 and Pd0.75 Si0.20 Ag0.05 alloys observed by pac

The phase transition in the alloys Pd_0.8 Si_0.2 and Pd_0.75 Si_0.20 Ag_0.05 have been investigated through the quadrupole interaction of¹¹¹Cd impurities. The quadrupole interactions were measured by means of the TDPAC technique from room temperature up to about 870 K. The variation of the quadrupole interaction with temperature in the alloy PdSiAg shows aT ^3/2 dependence below and above 629 K, with coefficientsB=5.43(25)·10⁻⁵ K^−3/2 andB=3.70(15)·10⁻⁵ K^−3/2, respectively. This demonstrates that the alloy undergoes a phase transition around 629 K. The existence of two electric field gradients observed in the alloy PdSi,V _zz (1)=3.47(54)·10¹⁷ V/cm² andV _zz (2)=2.29(36)·10¹⁷ V/cm², indicates that there are two different¹¹¹Cd sites. The corresponding fractionsf ₁ andf ₂ strongly depend on temperature. Below 520 K, most¹¹¹Cd nuclei are subject to the higher EFGV _zz (1) (f ₁≈70%), whereas above 520 Kf ₁ falls rapidly to zero andV _zz (2) becomes dominant. The temperature dependences of thef ₁ andf ₂ reveal a picture of the phase transition between the two crystal structures.