关于一类平面n+2次系统极限环唯一性的一个注记

本文继续完善文[1]和[2]的工作,利用广义Lienard方程和张芷芬唯一性定 理证明了,当n≥3时一类n+2次生化反应系统极限环的唯一性.至此,该系统极 限环唯一性问题得到完整解决.     

A study of the fluorescence lifetime of Pr3+ in SBN40

The fluorescence lifetime τ₁ of Pr³⁺ doped in the ferroelectric solid solution SNB40 (Ba_0.4Sr_0.6Nb₂O₆) was measured ar various temperatures. The fluorescence lifetime decreases gradually with increasing temperature. Furthermore, an anomalous increase of τ₁ was observed at a specific temperature. The fluorescence linewidth and the peak wavelength of fluorescence also showed an anomalous change at this temperature. It is likely that this phenomenon is due to the phase transition of the host crystal SBN40.     

Temperature stabilized optical waveguide modulator

A low drive-voltage optical modulator using a Ti-diffused UNbO₃ optical waveguide has been fabricated. Stabilization against ambient temperature change was realized by using a miniature halfwave plate. The halfwave voltage, 3 dB bandwidth, optical insertion loss and extinction ratio were 3·8 V (at 1·06m wavelength), 850 MHz, 10 dB and 13 dB, respectively. A reduction scheme for the optical absorption caused by metallic electrodes, and an analysis of the modulator high frequency response are also reported.     

Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment

A surface preparation method with fine SiO₂ particles in water is developed to flatten Si(0 0 1) surfaces on the nanometer scale. The flattening performance of Si(0 0 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100 × 100 nm²) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the 〈1 1 0〉 direction on terraces.     

Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO₂) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO₂ layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells.     

钨(Ⅵ)的富集与检测方法研究进展

检测W（Ⅵ）对环境科学和生命科学研究具有积极意义。本文就1991年以来国内外W（Ⅵ）的富集手段，检测方法概况作一综述，其中包括，荧光光谱法，分光光度法，原子发射光谱法，质谱法，动力学方法，极普法，化学发光法，中子活化分析及联用技术等。     

掺杂KNSBN晶体中的电子—空穴竞争

通过测量掺杂ＫＮＳＢＮ晶体光折变光栅记录和擦除动态特性，首次分析了掺杂ＫＮＳＢＮ晶体中的电子－空穴竞争，根据耦合波理论，指出，响应时间越快的晶体，电子－空穴竞争越激烈，因而导致净调制折射率越小，衍射效率赵低，最后，分析了空穴产生的原因，并估算有效载流子浓度为１０＾１５／ｃｍ＾３量级。     

大尺度三维几何尺寸立体视觉测量系统实现

基于立体视觉的大尺度三维几何尺寸测量技术是对外形不规则的大型物体进行几何量测量的有效方法。与传统的视觉测量技术不同,大尺度视觉测量的精度随测量距离的增加而迅速下降,同时大尺度空间下照明条件难以控制,也使得测量变得不稳定。因此如何在大测量尺度的前提下提高测量精度成为这一领域的研究难点。从立体视觉测量系统的原理出发,分析了影响系统精度的各种因素,将相位一致性变换与极线约束条件引入结构光光条中心提取之中,显著提高了图像分析的精度。研制了测量系统的样机并给出了实验结果,现场测试表明该系统可以有效地保证大尺度条件下的测量精度。