首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1962篇
  免费   156篇
  国内免费   143篇
化学   1592篇
晶体学   15篇
力学   42篇
综合类   9篇
数学   109篇
物理学   494篇
  2023年   19篇
  2022年   34篇
  2021年   36篇
  2020年   57篇
  2019年   73篇
  2018年   46篇
  2017年   31篇
  2016年   75篇
  2015年   78篇
  2014年   81篇
  2013年   111篇
  2012年   122篇
  2011年   123篇
  2010年   89篇
  2009年   93篇
  2008年   117篇
  2007年   92篇
  2006年   92篇
  2005年   84篇
  2004年   74篇
  2003年   95篇
  2002年   83篇
  2001年   86篇
  2000年   50篇
  1999年   33篇
  1998年   17篇
  1997年   22篇
  1996年   20篇
  1995年   17篇
  1994年   22篇
  1993年   14篇
  1992年   13篇
  1991年   17篇
  1990年   26篇
  1989年   15篇
  1988年   11篇
  1987年   16篇
  1986年   9篇
  1985年   22篇
  1984年   13篇
  1983年   7篇
  1982年   10篇
  1981年   14篇
  1980年   8篇
  1978年   11篇
  1977年   11篇
  1976年   7篇
  1975年   7篇
  1974年   10篇
  1973年   7篇
排序方式: 共有2261条查询结果,搜索用时 125 毫秒
11.
Total syntheses of the peptide enamide natural products terpeptin and aspergillamides A and B are reported. An oxidative decarboxylation-elimination protocol is employed to construct the indolic enamide moiety. Unambiguous stereochemical assignment of (−)-terpeptin is accomplished by synthesis of all possible stereochemical analogues. Select compounds have been evaluated in cell cycle inhibitor assays which show that the natural amino acid configuration of terpeptin has the most potent inhibitory activity.  相似文献   
12.
X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO2) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO2 layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells.  相似文献   
13.
Three New Diarylpropanes from Dioscorea composita   总被引:1,自引:0,他引:1  
Three new diarylpropanes were isolated from the dried rhizomes of Dioscorea composita Hemsl., and their structures were determined as 1, 3-bis-(2-hydroxy-4-methoxyphenyl) propane (1), 1, 3-bis-(2, 4-dihydroxyphenyl)propane (2), 1-(2′-hydroxy-4′-O-β-D- glucopymnosy-phenyl)-3-(2“, 4“-dihydroxyphenyl)propane (3), by spectroscopic analysis, respectively.  相似文献   
14.
An in‐line monitoring device using a quartz crystal resonator for thin film polymerization was proposed, and its performance has been evaluated by implementing in the UV polymerization of 2‐hydroxyethyl methacrylate with a photoinitiator of 1‐chloroanthraquinone. Because the variation of resonant resistance of the resonator is proportional to the square root of viscosity change that is closely related to the polymerization degree, the resistance can be used as a measure of the polymerization degree. The resistance measurements were compared with the outcome of instrumental analyses of polymerization degree using an FTIR spectrometer and a gel permeation chromatograph. The experimental results showed that the resistance measurements were consistent with the experimental outcome of the instrumental analyses, and this indicates the effectiveness of the proposed device. Owing to the simplicity and availability of the resonator system, its wide utilization in the monitoring of a variety of film polymerization processes, including photoresistor application, is expected. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2428–2439, 2006  相似文献   
15.
初级产品生产行业有两大特点:一是其初级投资有较大的不可逆转性,二是其产品价格具有较大的随机性(不确定性)。这两点的同时存在,给进入和退出初级产品行业造成壁垒。  相似文献   
16.
17.
18.
19.
Inductively-coupled plasma/atomic emission spectrometry with a high-resolution vacuum scanning monochromator is described for the determination of sulfur at 180.734 nm. The behavior of the signal-to-background ratio is investigated as functions of RF power, argon gas flow rate and observation height above the load coil. Under the operating conditions selected, the detection limit is 3 μg l?1. The Se I 196.090-nm line is chosen as internal standard, because the S/Se line pair exhibited the least change with carrier gas flow rate and acid concentration of solution. Sulfur in NiMo and CoMo/ Al2O3 catalysts used for coal liquefaction is determined as S(II) and S(VI) species. The total amount of the species agreed well with the sulfur value obtained by the conventinal combustion method.  相似文献   
20.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号