Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

脉冲电场屏蔽效能测试系统及测试方法

 自主研制了一套小型脉冲电场屏蔽效能测试系统，该系统由脉冲电场发射设备和脉冲电场测试设备构成。脉冲电场发射设备的天线口面前60 cm处可产生峰值达7.5 kV/m的脉冲电场，测试设备的动态测试范围达97 dB。系统采用光纤测量设备，在测量工作中能有效抑制强电磁场干扰。采用Matlab编写自动测量及数据处理程序，实现了数据采集与处理自动化。实验测量了金属桥架、控制柜、屏蔽帐篷、导电水泥混凝土房的脉冲电场屏蔽效能，其脉冲电场峰值衰减量分别为52,64,66,30 dB。实验表明可用脉冲电场的峰值衰减量来评估屏蔽体的脉冲电场屏蔽效能。     

Er3+掺杂的Bi2O3-B2O3-SiO2玻璃的光谱性质

测试了Bi₂O₃-B₂O₃-SiO₂玻璃中的Er³⁺离子的吸收光谱、发射光谱、⁴I_13/2的荧光寿命、拉曼光谱,及OH^-的傅里叶红外吸收光谱。应用Judd-Ofelt理论计算了该玻璃中的Er³⁺离子的J-O参数、振子强度、⁴I_13/2能级的寿命,从而利用测得的⁴I_13/2的荧光寿命得出了⁴I_13/2能级的量子效率(15%)。由于较低量子效率可能与OH^-有关,所以计算了玻璃中的OH^-浓度,发现其浓度较高(1.66×10¹⁹cm^-1,相当于Er³⁺浓度的3倍)。应用McCumber理论和四能级模型计算了Er³⁺离子的受激发射截面和荧光发射光谱的半峰全宽,结果与通过吸收光谱计算所得基本吻合。根据透射率和折射率的关系计算了折射率,发现和测量值相差很大,说明有较大的散射,通过拉曼光谱和显微镜测试,认为是玻璃中的微小气泡造成的。     

Synthesis and biological activity of S-oxo-[(methylthio)-methyl]cysteinols

A convenient route was developed to synthesize S-oxo-[(methylthio)-methyl]cysteinols on a large scale from cheap l-serine as the starting material. The structures of diastereoisomers were determined by NMR, CD spectra, and X-ray diffraction analysis. All four diastereoisomers were examined for their ability to inhibit certain bacteria from growing.     

基于液晶光阀的全息照相控光仪

设计了通过液晶光阀自动调整全息照相物光和参考光辐照比至最佳状态,同时能实现曝光时间自动控制的控光仪.该仪器巧妙运用液晶光阀和硅光电池器件,使测量、调整、自控一体化,从而提高拍摄优质全息图的工作效率.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

a-C:F薄膜的热稳定性与光学带隙的关联

以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性. 关键词： 氟化非晶碳膜 光学带隙 退火温度 热稳定性     

Research of spatial resolution in external electro-optic probing

A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.     

Electron–hole complexes in self-assembled quantum dots in strong magnetic fields

We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T.