Dilute solutions of poly(vinyl alcohol) derived from vinyl trifluoroacetate

The dilute-solution behavior of poly(vinyl alcohol) (PVA_VTFA), derived from vinyl trifluoroacetate, in water-dimethylsulfoxide (DMSO) mixtures was investigated. With solvent mixtures ranging from 10 to 20 vol % DMSO, the relation between the reduced viscosity η_sp/C and the polymer concentration C was linear for polymer concentrations above 0.2 g/dL, whereas in solutions in mixed solvents of other compositions the dependence was linear for polymer concentrations above 0.1 g/dL. The relation between the intrinsic viscosity [η] obtained for aqueous solutions of PVA_VTFA and the molecular weight M estimated from viscosity measurements in solutions of poly(vinyl acetate) (PVA_VTFA), obtained by acetylation of PVA_VTFA, was given by [η] = 7.34 × 10^?4 M^0.63. The value of [η] was greatest for the solvent mixture with 10 vol % DMSO and smallest for about 50 vol % DMSO, and Huggins constants k were smallest and greatest for these two cases, respectively. The turbidity of the solutions of low-molecular-weight PVA_VTFA, was higher than that of high-molecular-weight PVA_VTFA up to 30 vol % DMSO, and the reverse relation held for 40-70 vol % DMSO.     

Microwave spectrum of sulfur difluoride in the first excited vibrational states vibrational potential function and equilibrium structure

Microwave spectra of SF₂ in the first excited states of the three normal modes were observed and analyzed. A comparison of the observed inertia defects in the ν₁ and ν₃ states with those calculated by omitting the contributions of the Coriolis interaction between the two modes led to a $\text{ν}\text{?}{}_1\text{-}\text{ν}\text{?}{}_3$ vibrational frequency differences of 25.72 ± 0.33 cm^?1, with ν₁ being definitely higher. The inertia defect in the ground state and our measured values for the inertia defect in the ν₂ state and for the $\text{ν}\text{?}{}_1\text{-}\text{ν}\text{?}{}_3$ difference were combined with the centrifugal distortion constants of Kirchhoff et al. [J. Mol. Spectrosc.48, 157–164 (1973)] to improve the harmonic force field. The interaction constant between the two SF stretching coordinates was determined precisely. The third-order and the cubic anharmonic potential constants were calculated from the observed vibration-rotation constants. The equilibrium structure was determined to be $\text{r}{}_{\mathrm{e}}\text{(}\text{SF}\text{) = 1.58745 ± 0.00012}\text{A}\text{?}$ and θ_e(FSF) = 98.048 ± 0.013°.     

Photoluminescence decay affected by variable range hopping in band tail in amorphous As2S3

Photoluminescence decay was observed with various excitation energies and at various temperatures in amorphous As₂S₃. The decay at high temperature or with the high excitation energy had the $\text{t}{}^{\mathrm{<mtext>-3</mtext><mtext>2</mtext>}}$ long time behavior. This decay is concluded to arise from the combination of the tunneling recombination and the variable range hopping of carriers in the band tail.     

Synthesis and properties of n-trimethylgermylmethyl-n-nitrosourea,a germanium analogue of n-neopentyl-n-nitrosourea

The rate for hydrolysis, chemoselectivitly toward nucleophiles, and partition property of N-neopentyl-, N-trimethylsilylmethyl-, and N-trimethylgermylmethyl-N-nitrosoureas were compared. The latter two compounds are silicon and germanium analogues of the neopentyl derivative. The substitution effect of Ge in place of Si or C are discussed on the chemical and physicochemical properties.     

Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates

InGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however, large amounts of defects were observed. Photoluminescence measurements of the LEDs with a well thickness of 2.5 nm revealed that all the LEDs showed the peak emission wavelength at 389 nm. The PL intensity of the a ‐plane LED is one order of magnitude lower than that of the m ‐plane LED. The a ‐plane LEDs showed significant lower electroluminescence output powers than m ‐plane LEDs, suggesting that excitons are trapped by the defects, which act as non‐radiative recombination centers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of reversible photostructural change on the polarization of photoluminescence in chalcogenide glasses

Optical absorption edge in annealed As₂S₃ films shifts to lower energy after band-gap illumination. In these photodarkened films, polarization memory of photoluminescence was found to increase. In the case of illumination with linearly polarized light, anisotropy is induced in the absorption edge. The polarization memory was larger for larger shift of absorption edge. In contrast with this trend, the memory was smaller in As-rich films, the absorption edge of which was located at lower energy. It is considered that the optical anisotropy of the luminescence centers increases accompanying the reversible photostructural change.