Microwave spectrum of sulfur difluoride in the first excited vibrational states vibrational potential function and equilibrium structure

Microwave spectra of SF₂ in the first excited states of the three normal modes were observed and analyzed. A comparison of the observed inertia defects in the ν₁ and ν₃ states with those calculated by omitting the contributions of the Coriolis interaction between the two modes led to a $\text{ν}\text{?}{}_1\text{-}\text{ν}\text{?}{}_3$ vibrational frequency differences of 25.72 ± 0.33 cm^?1, with ν₁ being definitely higher. The inertia defect in the ground state and our measured values for the inertia defect in the ν₂ state and for the $\text{ν}\text{?}{}_1\text{-}\text{ν}\text{?}{}_3$ difference were combined with the centrifugal distortion constants of Kirchhoff et al. [J. Mol. Spectrosc.48, 157–164 (1973)] to improve the harmonic force field. The interaction constant between the two SF stretching coordinates was determined precisely. The third-order and the cubic anharmonic potential constants were calculated from the observed vibration-rotation constants. The equilibrium structure was determined to be $\text{r}{}_{\mathrm{e}}\text{(}\text{SF}\text{) = 1.58745 ± 0.00012}\text{A}\text{?}$ and θ_e(FSF) = 98.048 ± 0.013°.     

Photoluminescence decay affected by variable range hopping in band tail in amorphous As2S3

Photoluminescence decay was observed with various excitation energies and at various temperatures in amorphous As₂S₃. The decay at high temperature or with the high excitation energy had the $\text{t}{}^{\mathrm{<mtext>-3</mtext><mtext>2</mtext>}}$ long time behavior. This decay is concluded to arise from the combination of the tunneling recombination and the variable range hopping of carriers in the band tail.     

Synthesis and properties of n-trimethylgermylmethyl-n-nitrosourea,a germanium analogue of n-neopentyl-n-nitrosourea

The rate for hydrolysis, chemoselectivitly toward nucleophiles, and partition property of N-neopentyl-, N-trimethylsilylmethyl-, and N-trimethylgermylmethyl-N-nitrosoureas were compared. The latter two compounds are silicon and germanium analogues of the neopentyl derivative. The substitution effect of Ge in place of Si or C are discussed on the chemical and physicochemical properties.     

Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates

InGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however, large amounts of defects were observed. Photoluminescence measurements of the LEDs with a well thickness of 2.5 nm revealed that all the LEDs showed the peak emission wavelength at 389 nm. The PL intensity of the a ‐plane LED is one order of magnitude lower than that of the m ‐plane LED. The a ‐plane LEDs showed significant lower electroluminescence output powers than m ‐plane LEDs, suggesting that excitons are trapped by the defects, which act as non‐radiative recombination centers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Quantum Mechanics on S 1 Based on Dirac Formalism

We deal with quantum mechanics on S 1 (embedded to R 2 ) based on Dirac formalism. To conclude that the dynamical system is a quantum mechanical system we have to show selfadjointness of the dynamical variables. First we show selfadjointness of the momentum operators and then study their spectra. We find that the continuous spectrum of each momentum operator coincides with the set of all real numbers. Second we discuss selfadjointness of the Hamiltonian for a free quantum mechanical particle moving on S 1 together with its spectrum. We see that the spectrum of the Hamiltonian consists of eigenvalues only. Finally we apply these results to the Cauchy problem for the Schrödinger equation for a free quantum mechanical particle moving on S 1 .     

Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs

Improved nonpolar m ‐plane light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)