Ruby fluorescence pressure scale： Revisited

Effect of non-hydrostatic stress on X-ray diffraction in a diamond anvil cell (DAC) is studied. The pressure gradient in the sample chamber leads to the broadening of the diffraction peaks, which increase with the hkl index of the crystal. It is found that the difference between the determined d-spacing compressive ratio d/d0 and the real d-spacing compressive ratio dr/d0 is determined by the yield stress of the pressure transmitting media (if used) and the shear modulus of the sample. On the basis of the corrected experiment data of Mao et al. (MXB86), which was used to calibrate the most widely used ruby fluorescence scale, a new relationship of ruby fluorescence pressure scale is corrected, i.e., P = (1904/9.827)[(1+λ/λ0)9.827-1].     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

Color-stable,reduced efficiency roll-off hybrid white organic light emitting diodes with ultra high brightness

High-brightness and color-stable two-wavelength hybrid white organic light emitting diodes (HWOLEDs) with the configuration of indium tin oxide (ITO)/ N, N, N, N-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD): tetrafluoro-tetracyanoqino dimethane (F4-TCNQ)/N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)/ 4,4-N,N-dicarbazolebiphenyl (CBP): iridium (III) diazine complexes (MPPZ) 2 Ir(acac)/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN): p-bis(p-N,N-di-phenyl-aminostyryl)benzene (DSA-ph)/bis(10-hydroxybenzo[h] quino-linato)beryllium complex (Bebq2)/LiF/Al have been fabricated and characterized. The optimal brightness of the device is 69932 cd/m2 at a voltage of 13 V, and the Commission Internationale de l'Eclairage (CIE) chromaticity coordinates are almost constant during a large voltage change of 6-12 V. Furthermore, a current efficiency of 15.3 cd/A at an illumination-relevant brightness of 1000 cd/m2 is obtained, which rolls off slightly to 13.0 cd/A at an ultra high brightness of 50000 cd/m2. We attribute this great performance to wisely selecting an appropriate spacer together with effectively utilizing the combinations of exciton-harvested orange-phosphorescence/blue-fluorescence in the device. Undoubtedly, this is one of the most exciting results in two-wavelength HWOLEDs up to now.     

Influence of focusing depth on the microfabrication of waveguides inside silica glass by femtosecond laser direct writing

We studied the influence of focusing depth on the index change threshold and damage threshold of silica glass irradiated by a focused 120 fs laser beam. Both thresholds increased with the focusing depth. The aspect ratio of the waveguide cross section can be selected by changing the focusing depth. A 5 mm long waveguide was written at the depth of 2100 μm, which was single mode at 632.8 nm and exhibited propagation loss of 0.56 dB/cm. The refractive index change was calculated to be ∼2.47×10^-3. The influence of the focusing depth should be considered in multi-layer devices as shown in the fabrication of a 3×3 waveguide array. PACS 42.62.-b; 42.82.Et; 81.05.Kf     

Controlling a bunch of multiple filaments by means of a beam diameter

We demonstrate a three orders of magnitude increase and stability in the backscattered fluorescence signal from nitrogen molecules by terawatt femtosecond laser pulse induced air filaments using a new method. The method is based on squeezing the initial beam diameter using a telescope. The effect of laser shot-to-shot fluctuations was included in numerical simulations by a random distribution of the initial intensity in both squeezed and non-squeezed beams. Statistical processing of the simulation results shows that the average diameter of plasma channels as well as the total amount of free electrons generated in a bunch of multiple filaments in air is larger in the squeezed beam. Shot-to-shot stability of the simulated plasma density increases in the squeezed beam. The change of this plasma density with propagation distance is in good qualitative agreement with the change of the range-corrected nitrogen fluorescence signal with distance. PACS 42.65.Jx; 42.60.Jf; 42.68.Ay; 42.68.Wt     

Synthesis and magnetic properties of multilayer Ni/Cu and NiFe/Cu nanowires

Highly ordered composite nanowires with multilayer Ni/Cu and NiFe/Cu have been fabricated by pulsed electrodeposition into nanoporous alumina membrane. The diameter of wires can be easily varied by pore size of alumina, ranging from 30 to 100 nm. The applied potential and the duration of each potential square pulse determine the thickness of the metal layers. The nanowires have been characterized by transmission electron microscopy (TEM), magnetic force microscopy (MFM), and vibrating sample magnetometer (VSM) measurements. The MFM images indicate that every ferromagnetic layer separated by Cu layer was present as single isolated domain-like magnet. This technique has potential use in the measurement and application of magnetic nanodevices.     

Multiwavelength Raman fiber lasers with equalized peak power using a sampled chirped fiber Bragg grating

Two novel multiwavelength Raman fiber lasers using a ring cavity and a linear cavity are proposed and demonstrated experimentally. Both laser configurations include a sampled chirped fiber Bragg grating used in the reflection mode. By adjusting the polarization controller (PC) in the cavities, up to ten stable lasing wavelengths with 0.8 nm spacing and equalized peak power are achieved at room temperature. It is observed that the output spectrum depends upon which port of the grating is connected to the cavity. These two fiber ring lasers offer advantages such as, stable room temperature operation, simple structure, low loss, multiwavelength lasing lines with moderate output power. PACS 42.55.Wd; 42.55.Ye; 42.81.-i     

Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.     

Laser ranging based on electro-optic switch

Based on electro-optic switch effect in crystal, a novel laser ranging method is proposed. CW-laser emitted by laser transmitter propagates forward to the measured target, after being reflected by the target, and then goes back to the transmitter. Close to the transmitter, a special mono-block LiNbO₃ crystal is added into the round-trip light beams. High-voltage pulses with the sharp enough changes in rising edges are loaded on the crystal. Based on electro-optic effect, double refraction and internal double reflection effect in crystal, the crystal cuts off the round-trip light beams, and reflects a light pulse cut out by the crystal to a detector aside from the original beam path. The pulse width T is the period that laser propagates forward and back between the crystal and the target. The feasibility of the new idea is proved by our experiments and a brand-new way for the laser ranging is provided.