(NH4)2MoS4在活性炭上浸渍过程的研究:Ⅱ.干燥机理及模型

（ＮＨ＿４）＿２ＭｏＳ＿４在活性炭上浸渍过程的研究Ⅱ．干燥机理及模型秦慧芳，张成芳，陆岗，俞丰，朱子彬（华东理工大学无机化工研究所，上海２００２３７）２３７）关键词硫代钼酸铵，活性炭，干燥，钼分布，干燥模型负载型催化剂的活性组分在载体上的分布，受浸渍...     

光电光谱法分析钢中钙

本文研究了用光电光谱法测定钢中钙的方法 ,确定了最佳分析条件 ,分析了共存元素的干扰情况。用本方法测定钢中钙 ,具有良好的准确度和精密度 ,结果令人满意。     

Higher-order radiative perturbation theory

As a computationally effective tool, the first-order term of the radiative perturbation theory has been computed successfully, and has been applied in a number of areas. In this article, we develop the computational expressions for the higher-order terms of the perturbation expansion in a plane parallel atmosphere. These expressions are then implemented, and numerical results for some typical cases are presented. These results indicate that the computation is successful and that the higher-order terms are essential in cases where the first-order term alone cannot predict the perturbation with sufficient accuracy.     

Bellman最优性原理——论动态规划(Ⅰ)

对于Bellman最优性原理,本文举出实例表明:(1)策略不一定有(合理的)子策略;(2)子策略不一定存在最优子策略;(3)最优策略不一定有最优子策略;(4)用最短路与反证法来论述最优性原理的正确性,不能肯定成立;(5)Bellman最优性原理与其递推公式并不等价。 讨论四类最优策略之后,给出最优性原理与递推公式等价的一个充分性定理。     

优化路问题的代数方法—论动态规划（Ⅱ）

本文用同一思路求解多阶段有向图中三种优化路问题:最优路、N阶最优路及多指标Pareto优化路问题,它们都服从嘉量原理,都用同一个代数公式表达它们的嘉量,并可在同一种表格中进行计算,只是所在半域不同,以本文的方法讨论动态规划中一些离散决定型典型应用问题,其提法、建模思路以及求解过程都有可观的扩大与改善。     

Synthesis of grafted poly(p‐phenyleneethynylene) with energy donor–acceptor architecture via atom transfer radical polymerization: Towards nonaggregating and hole‐facilitating light‐emitting material

In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.