向列相液晶中强非局域空间光孤子传输的理论研究

对向列相液晶中非局域空间孤子的传输进行了理论研究.基于非线性液晶孤子传输方程，采用Gauss形式的试探解，不仅得到了空间孤子的解析解,而且还在临界功率附近得到了呼吸子的解析解.通过数值模拟证明我们的结果比Conti和Assanto等人的结果更合理.同时，对液晶中的非局域孤子模型和Snyder等提出的强非局域孤子模型进行了全面的比较. 关键词： 向列相液晶 空间孤子 非局域非线性 呼吸子     

大直径聚苯乙烯小球自组织方法制备高质量opal晶体

通过改进样品池的结构和其他实验条件，用气压法制备了大直径聚苯乙烯小球（直径为1 μm和700 nm）的人造蛋白石（opal）样品，并测量了其能带特性.对于制备能带位置在红外波段的三维光子晶体，这一实验结果将有很广阔的用途. 关键词： 光子晶体 光子带隙 人造蛋白石（opal）     

复宗量Laguerre-Gauss光束在强非局域非线性介质中的传输

研究得到了偏离束腰入射的复宗量Laguerre-Gauss光束在强非局域非线性介质中传输的解析表达式,并且得到了其二阶矩束宽的解析解.通过例子研究了偏离束腰入射的复宗量Laguerre-Gauss光束在强非局域非线性介质中传输性质.结果表明：非(0, m)模的复宗量Laguerre-Gauss光束的光束形状随着传输而发生改变,并以Δz=πz_c为周期做周期性演化.而(0,m)模复宗量Laguerre-Gauss光束在演化过程中则形状保持不变,仅改变光束宽度;不论功率多大,在偏离束腰入射条件下总是表现为呼吸子;只有当其为束腰入射,并且入射功率等于临界功率时才能形成孤子.     

Structural and magnetic properties of pulsed laser deposited SrRuO3/CoFe2O4/La2/3Sr1/3MnO3 magnetic oxide heterostructures on SrTiO3(001) and MgO(001)

We report on the growth of all-oxide SrRuO₃/CoFe₂O₄/La_2/3Sr_1/3MnO₃ and La_2/3Sr_1/3MnO₃/CoFe₂O₄/SrRuO₃ heterostuctures on SrTiO₃(001) and MgO(001) substrates by pulsed laser deposition. Structural analyses by X-ray diffraction and transmission electron microscopy clearly indicate the preservation of epitaxial relations when the La_2/3Sr_1/3MnO₃ layer is grown first, whereas trilayers with SrRuO₃ at the bottom are more disordered. Both the substrate material and the deposition sequence strongly influence the formation of various structural defects such as interfacial dislocations and sub-grain structures, and this is clearly reflected by a reduction of the saturation magnetization in the top electrode. When the substrate material and the deposition sequence are correctly chosen, however, the magnetic moments of the La_2/3Sr_1/3MnO₃ and SrRuO₃ layers reverse independently, and the La_2/3Sr_1/3MnO₃ layer retains bulk-like magnetic properties.     

Relaxation dynamics of stretched polymer chains traced by shear induced Shish‐Kebab structure

We have developed a morphologic method to investigate the relaxation processing of the stretched polymer chains in melts, in which an atomic force microscope probe was used to shear the surface of an isotactic polypropylene melt to obtain the isolated shish‐kebab structure. We present the results of the time dependence of length of the isolated shish‐kebab structure and the stress dependence of the kebab density along the direction of shish in this paper. Our results demonstrate that the shear‐oriented polymer melts show the relaxation dynamics of worm‐like chain where the length deficit of the isolated shish‐kebab structure is scaled with the relaxation time as a power of 1/3. The melting behavior of shish‐kebab structure was also investigated. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013, 51, 907–914     

光致变色多阶游程光存储研究

多阶游程存储是一种不改变光学系统而显著提高光存储容量和数据传输率的新方法.介绍了光致变色多阶游程存储原理和实验系统.提出了基于光致变色原理的多阶游程存储数学模型，该模型反映了记录符反射率与曝光功率、曝光时间之间的非线性关系，并在此基础上确定了光致变色多阶游程存储的写策略.基于650nm光致变色材料进行了4阶游程存储的动态实验.结果表明，实验中采用的650nm光致变色材料可用于多阶游程存储，采用的写策略能够有效地使记录信道线性化，利于采用适合线性系统的信号处理方法. 关键词： 多阶游程 光致变色 光存储 写策略     

在SQUID心磁测量中基于奇异值分解和自适应滤波的噪声消除法

采用矩阵奇异值分解(singular value decomposition, SVD)的方法，对高温射频超导量子干涉仪(HTc rf-SQUID)采集到的单通道心磁信号进行处理.证明了对于近似周期性的心磁信号，在无参考噪声的情况下矩阵奇异值分解的方法与自适应窄带陷波相结合有较好的消除广谱噪声的效果. 关键词： 高温射频超导量子干涉仪 心磁信号 奇异值分解 噪声消除     

X射线光场成像技术研究

X射线三维成像技术是目前国内外X射线成像研究领域的一个研究热点.但针对一些特殊成像目标,传统X射线计算层析(CT)成像模式易出现投影信息缺失等问题,影响CT重建的图像质量,使得CT成像的应用受到一定的限制.本文主要研究了基于光场成像理论的X射线三维立体成像技术.首先从同步辐射光源模型出发,对X射线光场成像进行建模;然后,基于光场成像数字重聚焦理论,对成像目标场在深度方向上进行切片重建.结果表明:该方法可以实现对成像目标任一视角下任一深度的内部切片重建,但是由于光学聚焦过程中的离焦现象,会引入较为严重的背景噪声.当对其原始数据进行滤波后,再进行X射线光场重聚焦,可以有效消除重建伪影,提高图像的重建质量.本研究既有算法理论意义,又可应用于工业、医疗等较复杂目标的快速检测,具有较大的应用价值.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Development of Sn2+-based oxyfluoride photocatalyst with visible light response of ca.650 nm via strengthened hybridization of Sn 5s and 02p orbitals

The hybridization between the outmost s orbitals of metal (Bi3+,Sn2+,Pb2+,Ag+) and O 2p orbitals has been widely employed to develop innovative semiconductors w...