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91.
We demonstrate the converse flexoelectric effect in a lead zirconate titanate microbeam. The fringe electric field of a comb electrode induces converse flexoelectric responses in uniformly poled and depoled beams. The simulated electric field distribution shows that bending of the beam is induced by piezoelectric and μ11μ11, μ12μ12 flexoelectric coefficients. Simulations indicate that piezoelectric displacement occurs in different directions in the two opposite poled samples while flexoelectric displacement remains the same. This finding is verified by the displacement measurement results.  相似文献   
92.
A novel method to measure the absolute phase shift on reflection of thin film is presented utilizing a white-light interferometer in spectral domain. By applying Fourier transformation to the recorded spectral interference signal, we retrieve the spectral phase function Ф, which is induced by three parts: the path length difference in air L, the effective thickness of slightly dispersive cube beam splitter Teff and the nonlinear phase function due to multi-reflection of the thin film structure. We utilize the fact that the overall optical path difference (OPD) is linearly dependent on the refractive index of the beam splitter to determine both L and Teff. The spectral phase shift on reflection of thin film structure can be obtained by subtracting these two parts from Ф. We show theoretically and experimentally that our new method can provide a simple and fast solution in calculating the absolute spectral phase function of optical thin films, while still maintaining high accuracy.  相似文献   
93.
The subband structure and occupation in the triangular quantum well at Al x Ga1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al x Ga1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.  相似文献   
94.
Shen CC  Wu HH 《Ultrasonics》2012,52(2):238-243

Background

High-frequency Doppler imaging is highly potential for detection of blood flow in microcirculation. In a swept-scan system, however, the spectral broadening of tissue clutter limits the detectability of low-velocity flow signal. Conventionally, the scanning speed of transducer has to be reduced to alleviate the clutter interference but at the cost of imaging frame rate. For example, the blood velocity of 0.5 mm/s becomes detectable only with a scanning speed lower than 1 mm/s. In this study, an alternative method is examined by suppressing the clutter magnitude to reduce the interference to flow signal without sacrificing scanning speed.

Methods

The method of third harmonic (3f0) transmit phasing can suppress the tissue harmonic clutter by transmitting at the fundamental and the additional 3f0 frequencies to achieve mutual cancellation between the frequency-sum and the frequency-difference components of the second harmonic signal. With 3f0 transmit phasing, the cut-off frequency of wall filtering can be reduced to preserve low-velocity flow without compromising the frame rate.

Results

Our results indicate that the 3f0 transmit phasing effectively reduces the harmonic clutter magnitude and thus improves the flow signal-to-clutter ratio. Compared to the conventional counterpart, the clutter-suppressed color flow and power Doppler images show fewer clutter artifacts and is capable of detecting more low-velocity flow of microbubbles. The resultant color-pixel-density also improves with clutter suppression.

Conclusion

For the swept-scan high-frequency (>20 MHz) system, 3f0 transmit phasing is capable of providing effective clutter suppression. With the same achievable scanning speed, the resultant Doppler image has higher sensitivity for low-velocity flow and is less susceptible to clutter artifacts.  相似文献   
95.
Lens-to-sample distances, delay time, atmospheric condition, laser pulse energy, etc. had obvious effects on the analytical performance of laser-induced breakdown spectroscopy. In this paper, these parameters are investigated in greater detail and we will explain how they have influences on the analytical performance. The results show that the focal plane under the sample surface can improve precision and detection limit, and the delay time should be decided according to sensitivity and accuracy. Spectral line intensity is stronger in argon than helium, nitrogen and air gas environment. Pulse energy should exceed energy threshold (about 50 mJ) which can generate plasma, and the energy should not exceed about 300 mJ to avoid plasma shielding. Under optimum parameters, concentration relative standard deviation of C, Si, Mn, P, S, Ni, and Cr for low-alloyed steel (sample number 11278) which were measured 11 times is 2.37%, 2.18%, 2.23%, 7.8%, 9.34%, 1.92%, and 2.13%, respectively. And the detection limit of C, Si, Mn, P, S, Ni, and Cr for pure steel is 0.0045%, 0.0072%, 0.0069%, 0.0027%, 0.0024%, 0.0047%, and 0.0024%, respectively.  相似文献   
96.
沈礼  野仕伟  戴长建 《物理学报》2012,61(6):63301-063301
提出了一种新方法, 精确确定了稀土Eu原子第一电离阈的位置. 先用脉冲电场对Eu原子的高激发Rydberg态进行延时场电离探测, 再通过反向静电场排除光电离和自电离等其他路径所产生的离子信号的干扰, 观察并研究了Eu原子第一电离阈随着电场移动的规律. 由此所确定的零场下第一电离阈的数值与采用其他方法所确定的文献值[1, 2]相一致, 从而验证了该方法的可靠性.  相似文献   
97.
The interaction between graphene and a SiO(2) surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO(2) surface is explained based on a general consideration of the configuration structures of the SiO(2) surface. It is found that the oxygen defect in a SiO(2) surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO(2) surface observed in a lot of experiments.  相似文献   
98.
YJ Shen  BQ Yao  XM Duan  GL Zhu  W Wang  YL Ju  YZ Wang 《Optics letters》2012,37(17):3558-3560
An efficient 2?μm in-band pumped Ho:YAG laser was demonstrated. The resonator involves two Ho:YAG crystals, each of which was dual-end-pumped by two orthogonally polarized diode-pumped Tm:YLF lasers. The maximum continuous wave output power of 103?W was achieved, corresponding to a slope efficiency of 67.8% with respect to the incident pump power and an optical-to-optical conversion efficiency of 63.5%. Under Q-switched mode, we obtained 101?W laser output at 30?kHz, corresponding to a slope efficiency of 66.2%. The beam quality or M2 factor was found to be less than 2.  相似文献   
99.
Due to its enormously high flexibility laser forming has been gaining importance in recent years. This rapidness and flexibility demand very precise controlling strategies especially when simulating the process of large plates and challenging the limited computation power of the current workstation. A simple, robust and accurate modeling method of laser forming has been demonstrated to solve this problem. The simplified model is meshed by multi-layered shell element, simulated with a more real scanning method and fewer parameters. The intelligent meshing strategies have reduced the number of elements dramatically. Thus the simulation efficiency has been improved significantly. By comparing the simulation results under the simplified model with the results under the traditional model for laser forming, the applicability of proposed method has been proven. The method of these simplified models is also suitable to simulate complex finite element models, which take much time to simulate. It would throw some light on the thermal mechanically coupled-field simulation of large sheet.  相似文献   
100.
研究了单掺铁铌酸锂晶体的光致散射行为随锂组分以及温度的变化关系.实验表明,随晶体组分的升高,光致散射得到了大幅抑制;不同组分晶体光致散射被完全抑制的温度不同.由此提出掺铁铌酸锂晶体在48.9 mol%-49.3 mol%范围内可能存在一临界锂组分,当晶体组分超过这一临界组分时,晶体光致散射被大幅抑制,而光致散射行为的温度依赖关系明显改变.  相似文献   
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