电子束蒸发沉积Ir膜真空紫外反射特性

Ir是一种重要的真空紫外反射材料,在太阳物理、宇宙物理、生命科学、大气物理、同步辐射等方面有着十分重要的应用.对电子束蒸发沉积Ir膜在真空紫外波段的反射特性进行了系统的理论和实验研究.根据吸收材料基底上单层金属膜数学计算模型,对不同基片上各种厚度的Ir膜真空紫外反射率进行了优化计算.根据计算和前期实验结果,采用电子束蒸发方法,在石英、K9玻璃基片上沉积了不同厚度的Ir膜,在入射波长120 nm处获得了近30%正入射反射率,对应的Ir膜厚度为12 nm.过厚或过薄均不利于Ir膜反射率的提高.经退火处理后,Ir膜中张应力有所释放但并未消除,同时晶粒平均尺寸显著增大,反射率下降.     

A Simple Hydrothermal Method for the Growth of ZnO Crystals

ZnO microstructures have been grown from zinc chloride (ZnCl₂) and ammonia solution at 100 °C for 1 – 24 hours. X‐ray diffraction, scanning electron microscope and field‐emission scanning microscope were utilized to investigate the structural properties and morphology of the ZnO crystals. Structural investigations show that phase‐pure hexagonal structure ZnO has been successfully synthesized, and the hexagonal structure ZnO can be achieved in solutions with an appropriate range of concentrations. Under our experimental conditions, several different morphologies of ZnO structures were obtained, including flower‐like and bar flower‐like. The relationship between the morphology and experimental conditions are discussed.     

Mo/Si aperiodic multilayer broadband reflective mirror for 12.5-28.5-nm wavelength range

Aperiodic molybdenum/silicon (Mo/Si) multilayer designed as a broadband reflective mirror with mean reflectivity of 10% over a wide wavelength range of 12.5-28.5 nm at incidence angle of 5° is developed using a numerical optimized method. The multilayer is prepared using direct current magnetron sputtering technology. The reflectivity is measured using synchrotron radiation. The measured mean reflectivity is 7.0% in the design wavelength range of 12.5-28.5 nm. This multilayer broadband reflective mirror can be used in extreme ultraviolet measurements and will greatly simplify the experimental arrangements.     

新型宽温区高热稳定性微波功率SiGe 异质结双极晶体管

宽温区大电流下的热不稳定性严重制约着功率SiGe 异质结双极晶体管 (HBT) 在射频和微波电路中的应用.为改善器件的热不稳定性, 本文利用SILVACO TCAD建立的多指功率SiGe HBT模型, 分析了器件纵向结构中基区Ge组分分布对微波功率SiGe HBT电学特性和热学特性的影响. 研究表明, 对于基区Ge组分为阶梯分布的HBT, 由于Ge组分缓变引入了少子加速电场, 使它与均匀基区Ge组分HBT相比, 具有更高的特征频率f_T, 且电流增益β和f_T随温度变化变弱, 这有利于防止器件在宽温区工作时电学特性的漂移.同时, 器件整体温度有所降低, 但器件各指温度分布均匀性较差.考虑多指HBT各发射极指散热能力存在差异, 在器件纵向结构设计为基区Ge组分阶梯分布的同时, 对其横向版图进行发射极指间距渐变结构设计, 用于改善器件各指温度分布的均匀性, 进而提高HBT的热稳定性.结果表明, 与基区Ge组分为均匀分布的等发射极指间距结构HBT相比, 新器件各指温度分布均匀性明显改善, f_T保持了较高的值, 且β和f_T 随温度变化不敏感, 热不稳定性得到显著改善, 显示了新器件在宽温区大电流下工作的优越性. 关键词： SiGe 异质结双极晶体管 Ge组分分布 发射极指间距渐变技术 热稳定性     

（FeCp2）0．65FNi（C3S7）2]的合成及表征

合成了一种新型的导电配位型化合物（FeCp2）0．65FNi（C3S7）2].通过元素分析（EA），电感耦合等离子体原子发射光谱（ICP—AES），核磁共振（^1HNMR），紫外光谱（UV）对该化合物进行了表征。     

Building 2D classification models and 3D CoMSIA models on small-molecule inhibitors of both wild-type and T790M/L858R double-mutant EGFR

Molecular Diversity - Epidermal growth factor receptor (EGFR) has received widespread attention because it is an important target for anticancer drug design. Mutations in the EGFR, especially the...     

A wide dynamic range laser rangefinder with cm-level resolution based on AGC amplifier structure

A pulsed time-of-flight (TOF) laser rangefinder with a pulsed laser diode and an avalanche photo diode (APD) receiver is constructed and tested. Trigged by an avalanche transistor, the laser diode can emit a periodic pulse with rise time of ～2 ns. A new structure with auto gain control (AGC) circuits both in the pre-amplifier and the post-amplifier is presented. Through this technology, not only the dynamic range of the receiver is extended, but also the walk error of timing discriminators is reduced. Large measurement range from 5 m to 500 m is achieved without any cooperative target. The single-shot precision is 3 cm for the weakest signal. Compared with previous laser rangefinders, the complexity of this system is greatly simplified.     

Dissociative and molecular oxygen chemisorption channels on reduced rutile TiO2(110): An STM and TPD study

High-resolution scanning tunneling microscopy (STM) and temperature-programmed desorption (TPD) were used to study the interaction of O₂ with reduced TiO₂(110)–(1 × 1) crystals. STM is the technique of choice to unravel the relation between vacancy and non-vacancy assisted O₂ dissociation channels as a function of temperature. It is revealed that the vacancy-assisted, first O₂ dissociation channel is preferred at low temperature (~ 120 K), whereas the non-vacancy assisted, second O₂ dissociation channel operates at temperatures higher than 150 K–180 K. Based on the STM results on the two dissociative O₂ interaction channels and the TPD data, a new comprehensive model of the O₂ chemisorption on reduced TiO₂(110) is proposed. The model explains the relations between the two dissociative and the molecular O₂ interaction channels. The experimental data are interpreted by considering the available charge in the near-surface region of reduced TiO₂(110) crystals, the kinetics of the two O₂ dissociation channels as well as the kinetics of the diffusion and reaction of Ti interstitials.