Assessing Earthquake Forecast Performance Based on b Value in Yunnan Province,China

Many studies have shown that b values tend to decrease prior to large earthquakes. To evaluate the forecast information in b value variations, we conduct a systematic assessment in Yunnan Province, China, where the seismicity is intense and moderate–large earthquakes occur frequently. The catalog in the past two decades is divided into four time periods (January 2000–December 2004, January 2005–December 2009, January 2010–December 2014, and January 2015–December 2019). The spatial b values are calculated for each 5-year span and then are used to forecast moderate-large earthquakes (M ≥ 5.0) in the subsequent period. As the fault systems in Yunnan Province are complex, to avoid possible biases in b value computation caused by different faulting regimes when using the grid search, the hierarchical space–time point-process models (HIST-PPM) proposed by Ogata are utilized to estimate spatial b values in this study. The forecast performance is tested by Molchan error diagram (MED) and the efficiency is quantified by probability gain (PG) and probability difference (PD). It is found that moderate–large earthquakes are more likely to occur in low b regions. The MED analysis shows that there is considerable precursory information in spatial b values and the forecast efficiency increases with magnitude in the Yunnan Province. These results suggest that the b value might be useful in middle- and long-term earthquake forecasts in the study area.     

电气线路互联系统线缆抗高空核电磁脉冲耦合效应

高空核电磁脉冲（HEMP）对电子设备的耦合途径主要有两方面：一方面是通过装备（产品）上的天线耦合通道进入到电子系统内的“前门耦合”方式;另一方面则是“后门耦合”,即通过装备（产品）上的壳体、电源线、电缆、机箱的缝隙、孔洞等途径进行耦合。主要研究电气线路互联系统(EWIS)线缆抗高空核电磁脉冲耦合效应,通过研究HEMP干扰的特征、能量分布,搭建HEMP数学模型,采用控制变量法,改变EWIS线缆类型、离地高度等要素,通过在CST上建立仿真模型以及开展试验,分析HEMP对电子设备造成的影响程度,得到HEMP耦合效应的一般性结论与规律。     

Influence of quantum correction on black hole shadows,photon rings,and lensing rings

We calculate photon sphere \begin{document}$r_{ph}$\end{document} and critical curve \begin{document}$b_c$\end{document} for a quantum corrected Schwarzschild black hole, finding that they violate universal inequalities proved for asymptotically flat black holes that satisfy the null energy condition in the framework of Einstein gravity. This violation seems to be a common phenomenon when considering quantum modification of Einstein gravity. Furthermore, we study the shadows, lensing rings, and photon rings in the quantum corrected Schwarzschild black hole. The violation leads to a larger bright lensing ring in the observational appearance of the thin disk emission near the black hole compared with the classical Schwarzschild black hole. Our analysis may provide observational evidence for the quantum effect of general relativity.     

LIBS对钛合金焊缝中成分的原位统计分布分析表征

钛合金凭借其强度高、耐蚀性好、耐热性高等特点已经被广泛应用于航天、海洋、生物医药等诸多领域,其中Ti-6Al-4V（TC4）合金的耐热性、强度、塑性、韧性、成形性、可焊性、耐蚀性和生物相容性均较好,已成为钛合金工业中的王牌合金。钛合金在激光焊接时,加入表面活性剂可以增加焊缝熔深、提高焊接效率、改善焊缝微观组织的不均匀性,但是可能会改变熔合区和焊缝区中元素含量及其分布状态,从而可能会对材料的性能产生一定的影响。运用LIBS分析技术对TC4钛合金焊接试样表面进行面扫描同步获得多元素成分信息,同时结合原位统计分布分析方法（OPA）,实现了对钛合金母材、熔合区、焊缝成分及其分布状态的快速表征,为活性剂的选择和焊接后钛合金的材料性能提供一种新的评价手段。选取了两个使用不同活性剂进行焊接的TC4钛合金薄板试样,选取焊缝纵切面方向作为分析面,采用320目的氧化铝砂纸进行表面处理,利用LIBSOPA系统进行成分分布统计表征。首先,对激发光斑和剥蚀条件进行条件优化,最终选择200 μm的激发光斑、10个预剥蚀脉冲10个剥蚀脉冲进行实验,并建立了钛合金中C,Al,V,Fe,Si和Ti六个元素的校准曲线（其中Si元素主要来自活性剂）;然后对钛合金焊接样品进行了区域扫描,并对元素含量和分布状态进行了统计表征。同时,在钛合金焊接样品的不同部位进行分区取样,采用高频红外法分析C元素含量,并与LIBSOPA结果进行比对,两种测试方法结果吻合。元素Al,V,Fe,Si和Ti分布结果与微束X荧光光谱法对应性较好。运用LIBSOPA 技术实现了对钛合金母材、熔合区、焊缝中多元素的成分分布表征,为快速判定钛合金焊缝中成分及分布状态提供了全新的评价表征手段。     

Wide-Angle Ultra-Broadband Metamaterial Absorber with Polarization-Insensitive Characteristics

An ultra-wideband metamaterial absorber is developed,which is polarized-insensitive and angular-stable.Three layers of square resistive films comprise the proposed metamaterial.The optimal values of geometric parameters are obtained,such that the designed absorber can achieve an ultra-broadband absorption response from 4.73 to 39.04 GHz(relative bandwidth of 156.7%)for both transverse electricity and transverse magnetic waves.Moreover,impedance matching theory and an equivalent circuit model are utilized for the absorption mechanism analysis.The compatibility of equivalent circuit calculation results,together with both full-wave simulation and experimental results,demonstrates the excellent performance and applicability of the proposed metamaterial absorber.     

熔体初始温度对液态金属Ni凝固过程中微观结构演变影响的模拟研究

采用量子 Sutton-Chen多体势, 对熔体初始温度热历史条件对液态金属Ni快速凝固过程中微观结构演变的影响进行了分子动力学模拟研究. 采用双体分布函数g(r)曲线、键型指数法、原子团类型指数法和三维可视化等分析方法对凝固过程中微观结构的演变进行了分析. 结果表明: 熔体初始温度对凝固微结构有显著影响, 但在液态和过冷态时的影响并不明显, 只有在结晶转变温度T_c附近才开始充分显现出来. 体系在1×10¹² K/s的冷速下, 最终均形成以1421和1422键型或面心立方(12 0 0 0 12 0)与六角密集(12 0 0 0 6 6) 基本原子团为主的晶态结构. 末态时, 不同初始温度体系中的主要键型和团簇的数目有很大的变化范围, 且与熔体初始温度的高低呈非线性变化关系. 然而, 体系能量随初始温度呈线性变化关系, 初始温度越高, 末态能量越低, 其晶化程度越高. 通过三维可视化分析进一步发现, 在初始温度较高的体系中, 同类团簇结构的原子出现明显的分层聚集现象, 随着初始温度的下降, 这种分层现象将被弥散开去. 可视化分析将更有助于对凝固过程中微观结构演变进行更为深入的研究. 关键词： 液态金属Ni 熔体初始温度 微观结构 分子动力学模拟     

ZnMgO/ZnO异质结构中二维电子气的研究

论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型, 采用一维Poisson-Schrodinger方程的自洽求解, 模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系. 研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值: 当垒层厚度小于该临界值时, 二维电子气消失, 当垒层厚度大于该临界值时, 其二维电子气密度随着该垒层厚度的增加而增大; 同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为, 导致二维电子气密度的明显增大; 论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较, 并从极化效应和能带结构的角度进行了分析和讨论, 给出了合理的解释. 关键词： 氧化锌 二维电子气 异质结构 理论计算     

Evolution of geometrical structures,stabilities and electronic properties of neutral and anionic Li n Cu λ (n = 1–9, λ = 0, −1) clusters: compare with pure lithium clusters

The structural evolution, stabilities, and electronic properties of copper-doped lithium Li _n Cu^λ (n?=?1–9, λ?=?0, ?1) clusters have been systematically investigated using a density functional method at PW91PW91 level. Extensive searches for ground-state structures were carried out, and the results showed the copper tends to occupy the most highly coordinated position and form the largest probable number of bonds with lithium atoms. By calculating the binding energies per atom, fragmentation energies and the HOMO-LOMO gaps, we found LiCu, Li₇Cu, LiCu^?, Li₂Cu^? and Li₈Cu^? clusters have the stronger relative stability and enhanced chemical stability. The content and pattern of frontier MOs for the most stable doped isomers were analysed to investigate the bond nature of interaction among Li and Cu atoms. The results show some σ-type and π-type bonds are formed among them, and with small admixture of the Cu d characters. To achieve a deep insight into the electron localization and reliable electronic structure information, the natural population analysis and electron localization function were performed and discussed.     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO3‐buffered LSAT (112) single crystals by pulsed laser deposition

Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO₃/(LaAlO₃)_0.29(Sr₂AlTaO₆)_0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 10⁹ cm^–2, and the density of basal stacking faults is below 1 × 10⁴ cm^–1. The (11\bar 2 \bar 2) ZnO exhibits strong D⁰X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.