Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.     

Thermal expansion properties of Lu2-xFexMo3O12

The structures and thermal expansion properties of Lu2-xFexMo3O12 have been investigated by X-ray diffraction(XRD).XRD patterns at room temperature indicate that compounds Lu2-xFexMo3O12 with x≤1.3 exhibit an orthorhombic structure with space group Pnca;compounds with x=1.5 and 1.7 have a monoclinic structure with space group P21/a.Studies on thermal expansion properties show that the linear thermal expansion coefficients of orthorhombic phase vary from negative to positive with increasing Fe content.Attempts to make zero thermal expansion materials indicate that zero thermal expansion can be observed in Lu1.3Fe0.7Mo3O12 in the temperature range of 200-400℃.     

A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs

The Pauli principle is included in a multisubband deterministic solver for two-dimensional devices without approximations.The nonlinear Boltzmann equations are treated properly without compromising on accuracy,convergence,or CPU time.The simulation results indicate the significant impact of the Pauli principle on the transport properties of the quasi-2D electron gas,especially for the on state.     

A new method for information retrieval in two-dimensional grating-based X-ray phase contrast imaging

Grating-based X-ray phase contrast imaging has been demonstrated to be an extremely powerful phase-sensitive imaging technique.By using two-dimensional(2D) gratings,the observable contrast is extended to two refraction directions.Recently,we have developed a novel reverse-projection(RP) method,which is capable of retrieving the object information efficiently with one-dimensional(1D) grating-based phase contrast imaging.In this contribution,we present its extension to the 2D grating-based X-ray phase contrast imaging,named the two-dimensional reverseprojection(2D-RP) method,for information retrieval.The method takes into account the nonlinear contributions of two refraction directions and allows the retrieval of the absorption,the horizontal and the vertical refraction images.The obtained information can be used for the reconstruction of the three-dimensional phase gradient field,and for an improved phase map retrieval and reconstruction.Numerical experiments are carried out,and the results confirm the validity of the 2D-RP method.     

A density functional theory study on the adsorption of CO and O₂ on Cu-terminated Cu₂O（111） surface

The adsorptions of CO and O2 molecules individually on the stoichiometric Cu-terminated Cu2O(111) surface are investigated by first-principles calculations on the basis of the density functional theory.The calculated results indicate that the CO molecule preferably coordinates to the Cu2 site through its C atom with an adsorption energy of -1.69 eV,whereas the O2 molecule is most stably adsorbed in a tilt type with one O atom coordinating to the Cu2 site and the other O atom coordinating to the Cu1 site,and has an adsorption energy of -1.97 eV.From the analysis of density of states,it is observed that Cu 3d transfers electrons to 2π orbital of the CO molecule and the highest occupied 5σ orbital of the CO molecule transfers electrons to the substrate.The sharp band of Cu 4s is delocalized when compared to that before the CO molecule adsorption,and overlaps substantially with bands of the adsorbed CO molecule.There is a broadening of the 2π orbital of the O2 molecule because of its overlapping with the Cu 3d orbital,indicating that strong 3d-2π interactions are involved in the chemisorption of the O2 molecule on the surface.     

Effect of C doping on the structural and electronic properties of LiFePO₄:A first-principles investigation

Using first-principles calculations within the generalized gradient approximation (GGA) +U framework, we investigate the effect of C doping on the structural and electronic properties of LiFePO 4 . The calculated formation energies indicate that C doped at O sites is energetically favoured, and that C dopants prefer to occupy O 3 sites. The band gap of the C doped material is much narrow than that of the undoped one, indicating better electro- conductive properties. To maintain charge balance, the valence of the Fe nearest to C appears as Fe 3+ , and it will be helpful to the hopping of electrons.     

不同压制压力下NiFe2O4纳米固体的ESR研究

 以反滴共沉定法制备了NiFe₂O₄纳米微粉，并在不同压力下将其压制成纳成米固体，然后用XRD谱和ESR谱研究了NiFe₂O₄纳米固体结构和界百状态随压制压力的变化。实验结果表明，NiFe₂O₄纳米固体的结构在高压下没有明显的变化，但其ESR谱的共振线宽和g因子值随着压力升高均表示出先逐渐增大至最大值，然手缓慢下降的规律。这种变化可以归因于纳米固体内部界面离子间的磁相互作用在压力的下所发生和变化。这引起实验结果境示，对于NiFe₂O₄纳米固体而言，最佳的成型压力是4.5 GPa，在此压力下，NiFe₂O₄纳米粒子既可以被压制成致密的纳米固体，又能够保留下它们的纳米结构和纳米性质。     

贫铀药型罩材料中微量杂质对聚能射流性能的影响

 通过对贫铀药型罩的静破甲实验，研究了材料中微量元素对射流性能的影响。实验结果表明，贫铀中的碳含量对射流性能起着非常重要的作用，随着碳含量的增加，静破甲威力下降十分显著。最后讨论了有害微量杂质对射流造成影响的原因，指出有害杂质可以以点缺陷形式或向晶界偏聚的形式存在于材料中，它们对材料的滑移变形均起到阻碍作用，其结果造成材料延展性能下降。     

用过剩压法生长金刚石过程石墨再结晶现象的研究

 描述了在过剩压驱动下金刚石晶种外延生过程中，大量伴生的石墨再结晶现象。再结晶石墨抑制了金刚石的自发成核；它们分布于合成腔触媒金属的低温区，结晶数量多，晶粒片状分层，尺寸大，但出现乱层晶体结构；同时产生一定数量的无定形碳。分析认为，这与长时间的低过剩压驱动，触媒金属内有足够的碳源供给，并具备在高温高压下石墨充分结晶但又达不到完全石墨化条件有关。还讨论了在低过剩压驱动下，促进金刚石晶体外延生长的碳源可能是活化的碳原子，而不是具有乱层结构特征的再结晶石墨。     

药型罩材料的晶粒度对射流性能的影响

 通过对紫铜药型罩的静破甲威力实验和脉冲X射线照像，研究了药型罩材料的晶粒度对射流性能的影响。研究结果表明，药型罩材料的晶粒度对射流动态延伸特性有重要影响。罩材料的晶粒细化可以增加有效连续射流的长度，推迟射流断裂的时间，提高静破甲威力水平。最后讨论了晶粒度对射流性能影响的机理。