被动谐波锁模Er3+/Yb3+共掺双包层光纤环形腔激光器

为了实现高重复频率和高功率的光脉冲,实验采用Er3+/Yb3+共掺双包层光纤作为增益介质,稳定的中心波长为976 nm的高功率半导体激光器作为泵浦源,利用非线性偏振旋转锁模技术,得到稳定的自起振锁模光脉冲。当泵浦功率为2.4 W时,激光器输出重复频率为8.829 MHz的连续锁模光脉冲,平均输出功率为52.5 mW,自起振锁模泵浦阈值功率为0.6 W,并观测到了稳定的高阶谐波锁模、调Q和调Q-锁模光脉冲输出。     

Carrier localization in InN epilayers grown on Si substrates

The carrier localization in InN epilayers grown on Si(111) was studied using time-resolved photoluminescence (PL). The emission energy dependence and temperature dependence of the PL decay times revealed that carrier localization plays an important role in the recombination of this material system. A model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states explains the carrier localization of InN epilayers. We suggest that the carrier localization in InN can be accounted for by the potential fluctuation caused by the random impurities.     

大口径光束波前采样器(孔栅)的研制

应用平面波角谱理论，分析了采样器对光波场采样和分光的基本原理以及对空间采样频率的选择规则，描述了实际研制的大口径采样器的结构设计，并通过数值方法和高能激光大气传输实验研究了高能激光经采样器前／后的远场光斑分布关系。结果表明：利用光束波前采样器能高保真地实现对高能激光束的分光。     

Polarization-Insensitive All-Optical Time-Division Demultiplexer Constructed with a Nonlinear Loop Interferometer

A polarization-insensitive 40-Gb/s time-division demultiplexer was demonstrated in a polarization-diversity loop configuration. The power penalty was measured to be 2.3 dB at a bit error rates of 10-9 for 10 Gb/s output signals.     

Bulk Modulus and Electronic Band Structure of ZnGa2X4(X=S,Se): a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa₂X₄ (X=S,Se). We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa₂X₄ by fitting the Birch-Murnaghan's equation of state. The extended Cohen's empirical formula agrees well with our ab initio results.     

针孔辅助点投影诊断方法实验研究

针孔辅助点投影背光成像是近几年国外新兴的等离子体诊断技术,在惯性约束聚变相关物理实验诊断中具有重要的应用前景.为验证这一诊断方法的实用性,在神光Ⅱ第九路平台上开展了演示实验.利用激光驱动平面Ti靶获得约4.7 keV的Ti K壳层X射线,在十几微米的针孔约束下作为次级点源并对Au栅格样品投影成像,并用CCD记录.实验成功获得了清晰的样品二维空间分辨的时间积分图像,空间分辨力优于16.1 μm.实验结果表明针孔辅助点投影具有较高的空间分辨力、较大的视场、较高的图像对比度,将成为瑞利泰勒不稳定性研究、激光状态方程研究等物理实验的重要诊断方法之一.     

Optical frequency counter based on two mode-locked fiber laser combs

This work demonstrates a semi-automatic optical frequency counter based on two mode-locked fiber laser combs. The mode number of the comb line involved in the optical frequency measurement is determined by operating the two laser combs at three different repetition rates, with two of them similar enough to have the same mode number of the beating comb lines. The determination of the mode number is independent of the frequency fluctuation of the laser under measurement. The whole measurement process was automated, except for the frequency stabilization of the laser combs and the optimization of the beat signal–to–noise ratio.     

Passively harmonic mode-locked erbium-doped fiber soliton laser with a nonlinear polarization rotation

Based on the nonlinear polarization rotation technique, we report on a stable passive 23rd harmonic mode-locked erbium-doped fiber soliton laser for the first time to the best of our knowledge. In this laser, 23 solitons are uniformly distributed in the cavity simultaneously, and all solitons have the same energy and duration. The increase of the coupler output enhances the dispersive radiation, and the longer cavity strengthens the interaction between solitons and dispersive waves. The two above factors play the key function to generate the 23rd harmonic mode-locked operation.     

纳秒激光诱导C60分子碎裂中轻碎片离子C+n(n《30)的产生机理研究

采用飞行时间质谱计测量了纳秒激光诱导C60分子碎裂中轻碎片离子C n(n≤11)的初始平均动能,结果显示轻碎片离子具有相同的初始平均动能(约为0.34 eV),并且该动能在一定范围内不随激光通量的变化而明显改变.结合前人的实验结果,对纳秒激光诱导C60分子碎裂中轻碎片离子C n(n<30)的主要产生模式作了新的阐述,即C60分子级联发射15个C2分子和一个电子形成自身不稳定的C 30离子,在皮秒时间尺度内C 30离子的笼形结构塌陷,进而轻碎片离子产生.     

掺杂PVK薄膜的荧光谱及电荷转移

根据PVK掺杂后荧光谱的变化，说明掺杂PVK薄膜的电致发光存在着从基质分子向掺杂分子的能量传递，用一个由单链模型扩展到包括杂质的哈密顿量进行数值求解，结果表明：在PVK和杂质分子之间有效的能量传递是源于它僮之间的电荷转移，且随着杂质浓度的变化，其荧光谱峰位的移动与掺杂前后系统总能量的改变及荧光谱强度与掺杂后转移的电荷数之间分别存在对应关系。该模型较好地解释了有关的实验结果。