Optical testing of star sensor (II): Alignment of star sensor from off-line pictures taken in orbital test

Alignment error of an image sensor relative to the optical axis of a star sensor head and alignment errors between four heads were calculated from pictures taken in an orbital experiment. When comparing the image sensor alignment parameters in the orbital test and a ground test, both values matched well. By determining the relative relationship of the four heads using four pictures taken at the same moment in orbit and uploading the parameters to the star sensor system in orbit, the estimated attitude error was improved from 0.29 to 0.17°, though the accuracy was limited by the ±0.2° determination accuracy of the satellite itself. We estimated the attitude determination accuracy from separation angles between boresights of the four heads, calculated from pattern matching between downloaded pictures and a star catalogue. The estimated accuracy, in terms of potential optical performance, was 0.60 arcmin at 3σ, which is sufficient to satisfy the specification of 1 arcmin.     

UV dose measurements of photosensitive dermatosis patients by polycrystalline GaN-based portable self-data-acquisition UV monitors

We have developed a UV monitor with polycrystalline (poly-) gallium nitride (GaN) UV sensors and evaluated its performance from the viewpoint of its effectiveness for use with photosensitive dermatosis patients. The poly-GaN UV sensor is sensitive to UV light from 280 to 410 nm even without optical filters. The UV monitor is a portable self-data-acquisition instrument with a minimum detection level (defined as average UV intensity over 290 to 400 nm) of 2 microW/cm2 and can store UV dose data for 128 days. It allows easy measurement of four orders of magnitude of ambient UV intensity and dose from indoor light to direct solar radiation in summer. Trial use of the UV monitor by five xeroderma pigmentosum patients started in June 2000 and was carried out for 1 year. It was demonstrated that the UV monitor was useful in improving their quality of life.     

Self-oscillation of polymer chains with rhythmical soluble-insoluble changes

Self-oscillation of polymer chains in an aqueous solution has been achieved. The ruthenium catalyst for the Belousov-Zhabotinsky reaction was polymerized by using N-isopropylacrylamide and dissolved into the solution containing the BZ substrates. Periodical soluble-insoluble changes of the polymer chain were spontaneously induced by the BZ reaction. The conformational oscillations of the polymer were measured as the optical transmittance changes of the solution. This is the first report that rhythmical and reversible soluble-insoluble changes of polymer chains are realized under constant and homogeneous conditions. The transducing system from chemical energy of the BZ reaction to optical information has been constructed.     

Self-written waveguides in photopolymerizable resins

We study the optically induced growth and interaction of self-written waveguides in a photopolymerizable resin. We investigate experimentally how the interaction depends on the mutual coherence and the relative power of the input beams and suggest an improved analytical model that describes the growth of single waveguides and the main features of their interaction in photosensitive materials.     

Analysis of an SPP/G/1 system with multiple vacations and E-limited service discipline

Many researchers have studied variants of queueing systems with vacations. Most of them have dealt with M/G/1 systems and have explicitly analyzed some of their performance measures, such as queue length, waiting time, and so on. Recently, studies on queueing systems whose arrival processes are not Poissonian have appeared. We consider a single server queueing system with multiple vacations and E-limited service discipline, where messages arrive to the system according to a switched Poisson process. First, we consider the joint probability density functions of the queue length and the elapsed service time or the elapsed vacation time. We derive the equations for these pdf's, which include a finite number of unknown values. Using Rouché's theorem, we determine the values from boundary conditions. Finally, we derive the transform of the stationary queue length distribution explicitly.     

Transverse magnetoresistance and Hall effect in p-type tellurium in strong magnetic fields

Galvanomagnetic effects in tellurium with carrier concentrations ranges from 10¹⁴ ∽7×10¹⁵cm^-3 were measured at liquid helium temperatures in intense magnetic fields up to 90 kOe. In slightly doped crystals, whose carrier concentrations were about 3 ∽ 7 × 10¹⁵cm^-3, the magnetic field dependences of the Hall coefficient and the transverse magnetoresistance were found to be different from those in purer crystals. The results can be explained by assuming the existence of an impurity band and by taking into account the complicated structure of the Landau levels.