Studies of optical and structural properties of CdSe/polymer nanocomposites: evidence of charge transfer and photostability

In this work, the role of conducting [poly (p-phenylinevinylene) (PPV)] and nonconducting (polystyrene) polymers on the properties of their respective composites with CdSe quantum dots of varied sizes has been investigated. The emission and structural properties of polymer–CdSe composites are found to be dependent on the crystallite size and morphology of CdSe nanocrystallites. Smaller CdSe quantum dots (size, ∼5 nm) ensures efficient charge transfer process across polymer–CdSe interface as evident by almost complete quenching of photoluminescence (PL) emission as compared to larger CdSe quantum dots (size, ∼7 nm). Presence of residual trioctylphosphine (TOP)/ tri-n-octylphosphine-oxide (TOPO) species and agglomeration of particles act as a hindrance for quenching of emission and hence charge transfer for larger CdSe nanocrystallites. Emission studies indicated an increased conjugation length for PPV polymers in different solvents (toluene, pyridine) and in solid state. Nonconducting polymer polystyrene shows charge transfer across polymer–CdSe interface as well. However, polystyrene polymer has a shorter chain length, which ensures maximum coverage on the surface of CdSe nanocrystallites and provides better photostability to CdSe QDs within the polymer matrix as compared to that for PPV–CdSe nanocomposites.     

Unprecedented Charge‐Transfer Complex of Fused Diporphyrin as Near‐Infrared Absorption‐Induced High‐Aspect‐Ratio Nanorods

Charge‐transfer (CT) complexes of near‐infrared absorbing systems have been unknown until now. Consequently, structural similarities between donor and acceptor are rather important to achieve this phenomenon. Herein, we report electron donors such as non‐fused diporphyrin‐anthracene (DP), zinc diporphyrin‐anthracene (ZnDP) and fused zinc diporphyrin‐anthracene (FZnDP) in which FZnDP absorbs in NIR region and permits a CT complex with the electron acceptor, perylene diimide (PDI ) in CHCl₃ exclusively. UV/Vis‐NIR absorption, ¹H NMR, NOESY and powder X‐ray diffraction analysis demonstrated that the CT complex formation occurs by π–π stacking between perylene units in FZnDP and PDI upon mixing together in a 1:1 molar concentration in CHCl₃, unlike non‐fused ZnDP and DP. TEM and AFM images revealed that the CT complex initially forms nanospheres leading to nanorods by diffusion of CH₃OH vapors into the CHCl₃ solution of FZnDP/PDI (1:1 molar ratio). Therefore, these CT nanorods could lead to significant advances in optical, biological and ferroelectric applications.     

Voltage Stimulated Anion Binding of Metalloporphyrin‐induced Crystalline 2D Nanoflakes

Voltage‐stimulated redox‐active materials have received significant attention in the field of organic electronics and sensor technology. Such stimuli‐responsive materials trigger the formation of crystalline nanostructures and facilitate the design of efficient smart devices hitherto unknown. Herein, we report that free‐base and metallo‐tetratolylporphyrin‐linked ferrocene derivatives ( H₂TTP ‐ Fc and ZnTTP ‐ Fc ) undergo distinct proton/anion binding mechanism in CHCl₃ during bulk electrolysis at applied voltage of 1.4 V to give [ H₄TTP ‐ Fc]⁺Cl^? and H⁺ [ (Cl)ZnTTP ‐ Fc]^? followed by nanospheres and crystalline 2D nanoflakes formation, confirmed by SEM and TEM images, by methanol vapor diffusion (MVD) approach. Moreover, X‐ray diffraction analysis suggest that protonated H₂TTP ‐ Fc aggregates exhibit amorphous nature, whereas H⁺ [ (Cl)ZnTTP ‐ Fc]^? depict crystalline nature from layer‐by‐layer arrangement of nanoflakes assisted by π–π stacking and ion‐dipole interactions.     

Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature

Motivated by the need to form 1D-nanostructured dopants on silicon surfaces, we have attempted to grow Ga on the high index Si(5 5 12) surface which has a highly trenched (1D) morphology. The evolution of the interface with Ga adsorption in the monolayer regime has been probed by in situ AES, LEED and EELS. Controlling the kinetics by changing the Ga flux rates shows an interesting difference in the 1.0 to 1.5 ML region. The low flux rate (0.03 ML/minute) results in a Frank van der Merwe (layer by layer) growth mode up to 2 ML, while the higher flux rate (0.1 ML/minute) shows a transient island formation after the completion of 1 ML. The low rate shows the formation of 2 × (3 3 7) and (2 2 5) superstructures, while only the 2 × (3 3 7) is observed in a wide coverage range for the higher rate. The results demonstrate the ability to kinetically control the surface phases with different electronic properties of this technologically important interface.