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61.
62.
We present here infrared absorption spectra of dithia tetraphenylporphine and its cation in the 450–1600 and 2900–3400 cm−1 regions. Most of the allowed IR bands are observed in pairs due to overallD 2h point group symmetry of the molecule. The observed bands have been assigned to the porphyrin skeleton and phenyl ring modes. Some weak bands, which are forbidden underD 2h , also appear in the spectra due to the distortion of the molecule from planarity-caused by the out-of-plane positioned N and S atoms. Increased intensity of some phenyl ring bands compared to free-base tetraphenylporphine is explained on the basis of rotation of phenyl rings towards the mean molecular plane. Contrary to the point group symmetry of cation of dithia tetraphenylporphine, certain bands are observed to be degenerate due to identical bonding arrangements in pyrrole rings of the cation  相似文献   
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64.
Zajc B  Kake S 《Organic letters》2006,8(20):4457-4460
Novel achiral and chiral alkyl alpha-(1,3-benzothiazol-2-ylsulfonyl)-alpha-fluoroacetates can be readily synthesized by metalation-fluorination of (1,3-benzothiazol-2-ylsulfonyl)acetates. DBU-mediated condensations of these fluorinated synthons with aldehydes proceed in a facile manner at 0 degrees C or at room temperature giving high yields of alpha-fluoro acrylates. Ketones are unreactive under these conditions. The presence of fluorine renders the synthon substantially more reactive compared to the unfluorinated analogue. Reactivity of alpha-(1,3-benzothiazol-2-ylsulfonyl)-alpha-fluoroacetate and the Horner-Wadsworth-Emmons reagent (EtO)2P(O)CHFCOOEt has also been compared.  相似文献   
65.
We generalize the hybrid magnetofluid model of a charged fluid interacting with an electromagnetic field to the dynamics of a relativistic hot fluid interacting with a non-Abelian field. The fluid itself is endowed with a non-Abelian charge and the consequences of this generalization are worked out. Applications of this formalism to the quark gluon plasma are suggested.  相似文献   
66.
    
Nanocrystalline ZnO thin films were deposited at different temperatures (Ts = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of Ts on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in Ts. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher Ts demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (~10?2 Ω-cm), superior figure of merit (~10?3 Ω?1) and low sheet resistance (~102 Ω/□). The charge carrier concentration (η -/cm3) and mobility (μ – cm2V?1s?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.  相似文献   
67.
    
The dc electrical resistivity (q) and thermoelectric power (α) are studied as functions of temperature for Mn-substituted ferrites with general formula Cd0.3Ni0.7 + xMnxFe2−2xO4. At lower Mn concentrations (i.e., x < 0.15) the increase in dc resistivity is attributed to hindering the Verwey mechanism between Fe2+ ⇄ Fe3+. This is due to the stable bond formation of Mn3+ + Fe2+ at octahedral sites. The decrease in resistivity at higher concentration (i.e., x > 0.15) is attributed to the formation of Mn3+ clusters which lowers the concentration of Mn3+ + Fe2+ bonds. The compositional variation of thermo-e.m.f. shows n-type behaviour for the samples with x less than 0.15, whereas p-type behaviour for the samples with x > 0.15. The n-p transition is attributed to the formation of Ni3+ and Fe2+ + vacancies which act as p-type carriers. The thermo-e.m.f. remains constant for all the samples at the measured temperatures. The temperature dependences of α, Q, and mobility clearly confirm the conduction mechanism to be due to polaron hopping. The compositional variations of dielectric constant show two regions, one for x ≦ 0.15 in which the dielectric behaviour is due to Fe3+ ions and the other for x > 0.15, where the nature of the dielectric is complex. The complex dielectric structure might have its origin in the different valence states of Mn, inhomogeneities within the ferrite grain, and oxygen stoichiometry.  相似文献   
68.
    
Epitaxial layers of InGaN were deposited by metalorganic chemical vapor deposition on a GaN layer/sapphire substrate in order to ascertain compositional variation in the GaN–InN system. Samples were examined with In contents from x = 0.09 to 0.31. Plan‐view images obtained by transmission electron microscopy reveal a domain structure within which the composition is modulated. Satellites appear around the fundamental reflections in the diffraction pattern. The spacing between the satellite and the reflection can be related to the wavelength of the modulations. Equations are derived for modulations in the [10 0] and [11 0] directions. Modulations were measured in the [10 0] direction and found to be about λ = 3.2 nm for all samples. Strain energy considerations explain the observation of modulations along different directions.  相似文献   
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70.
A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III–V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.  相似文献   
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