Fast Modulation of d-Band Holes Quantity in the Early Reaction Stages for Boosting Acidic Oxygen Evolution

Synthesis of highly active and durable oxygen evolution reaction (OER) catalysts applied in acidic water electrolysis remains a grand challenge. Here, we construct a type of high-loading iridium single atom catalysts with tunable d-band holes character (h-HL−Ir SACs, ∼17.2 wt % Ir) realized in the early OER operation stages. The in situ X-ray absorption spectroscopy reveals that the quantity of the d-band holes of Ir active sites can be fast increased by 0.56 unit from the open circuit to a low working potential of 1.35 V. More remarkably, in situ synchrotron infrared and Raman spectroscopies demonstrate the quick accumulation of *OOH and *OH intermediates over holes-modulated Ir sites in the early reaction voltages, achieving a rapid OER kinetics. As a result, this well-designed h-HL−Ir SACs exhibits superior performance for acidic OER with overpotentials of 216 mV @10 mA cm⁻² and 259 mV @100 mA cm⁻², corresponding to a small Tafel slope of 43 mV dec⁻¹. The activity of catalyst shows no evident attenuation after 60 h operation in acidic environment. This work provides some useful hints for the design of superior acidic OER catalysts.     

Restructuring-induced activity of SiO(2)-supported large au nanoparticles in low-temperature CO oxidation

Large Au nanoparticles with an average size of approximately 10 nm supported on inert SiO(2) become active in low-temperature CO oxidation after the addition of NaNO(3). The catalyst structures have been characterized in detail by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray absorption spectroscopy. The NaNO(3) additive in Au/SiO(2) catalysts does not lead to the formation of fine Au nanoparticles, which are generally considered to be inevitable in low-temperature CO oxidation catalyzed by gold, nor does it alter the electronic structure of Au. The NaNO(3)-induced restructuring of large Au nanoparticles was proposed to create low-coordinated Au sites on the surface capable of catalyzing low-temperature CO oxidation. These results experimentally prove that the activity of supported Au nanoparticles in low-temperature CO oxidation could solely arise from their geometric structure, which greatly deepens the fundamental understandings of Au nanocatalysis.     

一个二流体系统中非线性水波的Hamilton描述

讨论了一个二流体系统中非线性水波的Hamilton描述,该系统由水平固壁之上的两层常密度不可压无粘流体组成,上表面为自由面.文中将速度势函数展开成垂向坐标的幂级数,在浅水长波的假定下,取下层流体的“动厚度”与上层流体的“折合动厚度”为广义位移、界面上和自由面上的速度势为广义动量,根据Hamilton原理并运用Legendre变换导出该系统的Hamilton正则方程,从而将单层流体情形的结果推广到分层流体的情形.     

半导体可饱和吸收镜被动锁模侧面抽运Nd:YAG激光器研究

利用半导体可饱和吸收镜(SESAM)锁模技术实现的超快脉冲激光器具有结构简单紧凑、脉冲序列稳定等优势,在许多领域有着重要用途,自问世以来受到国内外的广泛关注.分析了SESAM被动锁模侧面抽运固体激光器的具体要求,进行了不同条件下的SESAM被动锁模侧面抽运Nd:YAG激光器实验.获得了最高平均功率9.5 W,脉冲重复频率71 MHz,单脉冲能量约141 nJ的皮秒激光脉冲.对SESAM被动锁模侧面抽运Nd:YAG激光器进行了实验和理论分析,对实现高功率连续超短脉冲激光器进行了探讨.     

Current-mode current-tunable four-phase quadrature oscillator

A current-mode current-tunable four-phase quadrature oscillator (QO) using current differencing transconductance amplifiers (CDTA) is presented in this paper. The proposed QO consists of three CDTAs and two grounded capacitors, which can provide four quadrature current outputs at high impedance nodes. The proposed QO has the advantages of electronically and independently control of oscillation condition and oscillation frequency. Moreover, the active and passive sensitivities of the QO are low. Cadence IC Design Tools 5.1.41 post-layout simulation results are included to confirm the theory.     

GO法在固体激光器可靠性分析中的应用

对高功率半导体泵浦固体激光器(DPL)系统的可靠性进行了分析,根据GO法的原理构建了DPL系统的GO图;利用GO法计算公式,得到了系统故障率和平均无故障工作时间等重要可靠性指标。结果符合实验室经验值。最后分析了各部件的故障率的重要度,讨论了改善高功率DPL系统可靠性的措施,对系统的使用和维修等工作具有参考意义。     

High‐Level Incorporation of Silver in Gold Nanoclusters: Fluorescence Redshift upon Interaction with Hydrogen Peroxide and Fluorescence Enhancement with Herbicide

High‐level incorporation of Ag in Au nanoclusters (NCs) is conveniently achieved by controlling the concentration of Ag⁺ in the synthesis of bovine serum albumin (BSA)‐protected Au NCs, and the resulting structure is determined to be bimetallic Ag₂₈Au₁₀‐BSA NCs through a series of characterizations including energy‐dispersive X‐ray spectroscopy, mass spectroscopy, and X‐ray photoelectron spectroscopy, together with density functional theory simulations. Interestingly, the Ag₂₈Au₁₀ NCs exhibit a significant fluorescence redshift rather than quenching upon interaction with hydrogen peroxide, providing a new approach to the detection of hydrogen peroxide through direct comparison of their fluorescence peaks. Furthermore, the Ag₂₈Au₁₀ NCs are also used for the sensitive and selective detection of herbicide through fluorescence enhancement. The detection limit for herbicide (0.1 nm ) is far below the health value established by the U.S. Environmental Protection Agency; such sensitive detection was not achieved by using AuAg NCs with low‐level incorporation of Ag or by using the individual metal NCs.     

Ni-B和Ni-Ce-B超细非晶态合金的退火晶化及其催化性能

 采用XAFS,XRD和DTA方法研究了Ni－B和Ni－Ce－B超细非晶态合金在退火过程中的结构变化及其结构与催化性能的关系．活性结果表明,在退火温度为623K时,Ni－B和Ni－Ce－B样品的苯加氢催化反应转化率最高,分别为63％和81％,0．3％Ce的掺入提高了Ni－Ce－B的催化活性．DTA结果表明,Ni－B超细非晶态合金在598和653K有两个晶化峰,而Ni－Ce－B样品有548,603,696和801K四个晶化峰．XAFS和XRD结果进一步说明,在573K退火时,Ni－B样品晶化生成晶态Ni3B和纳米晶Ni,此时Ni－Ce－B仅有少量晶态Ni3B生成．在673K退火时,Ni－B样品中的Ni3B开始分解生成晶态Ni,同时纳米晶Ni聚集并形成大颗粒晶态Ni,而Ni－Ce－B样品晶化生成晶态Ni3B和纳米晶Ni．在773K和更高的温度退火处理后,Ni－B样品中Ni的局域环境结构与金属Ni箔基本一致,但Ni－Ce－B样品晶化生成的Ni晶格有较大畸变,同时Ni3B并未分解．说明0．3％的Ce对提高Ni－Ce－B样品的稳定性有显著作用．本文首次报道了Ni－B和Ni－Ce－B超细非晶态合金中苯加氢催化活性中心为纳米晶Ni和类似于金属Ni的Ni－B非晶态合金．     

Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.