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71.
72.
We introduce the notion of cyclic tableaux and develop involutions for Waring's formulas expressing the power sum symmetric function pn in terms of the elementary symmetric function en and the homogeneous symmetric function hn. The coefficients appearing in Waring's formulas are shown to be a cyclic analog of the multinomial coefficients, a fact that seems to have been neglected before. Our involutions also spell out the duality between these two forms of Waring's formulas, which turns out to be exactly the “duality between sets and multisets.” We also present an involution for permutations in cycle notation, leading to probably the simplest combinatorial interpretation of the Möbius function of the partition lattice and a purely combinatorial treatment of the fundamental theorem on symmetric functions. This paper is motivated by Chebyshev polynomials in connection with Waring's formula in two variables. 相似文献
73.
74.
Summary A new chelating resin was synthesized from a macroreticular polystyrene-divinylbenzene copolymer incorporating the -hydroxydithiocinnamic acid functional group. Some properties, such as the water regain, hydrogen capacity, sulfur content, dissociation constant and the metal capacity of the resin were determined. The formation constants for Cd(II) and Cu(II) resin complex were determined to be 101.10 and 102.44, respectively. The results of the pH-dependence of the adsorption capacity and the trace metal ion uptake showed that the synthesized resin was highly selective for silver(I), mercury(II), gold(III) and platinum(IV) in strongly acidic aqueous solution.
Synthese, Charakterisierung und Komplexierungseigenschaften eines -Hydroxydithiozimtsäure-haltigen Polystyrolharzes相似文献
75.
S.T.S. Bukkapatnam P.K. Rao W.-C. Lih N. Chandrasekaran R. Komanduri 《Applied Physics A: Materials Science & Processing》2007,88(4):785-792
Continuous advancements in chemical mechanical planarization (CMP) process, such as new polishing pads, slurry materials,
and abrasive particles necessitate optimization of the key process input parameters for maximum material removal rate (MRR)
and/or minimum within wafer non-uniformity (WIWNU) using sparse experimental results. In this investigation a methodology
is proposed for developing process models and optimization of input parameters (both main and interaction parameters) for
maximum MRR and minimum WIWNU. This approach will be equally applicable for polishing other materials, such as copper, dielectrics
and low-k materials. Complex relationships exist between several machine-specific and material-specific input parameters and
the output performance variables, chiefly MRR and WIWNU. However, only a few of the input parameters are changed on a regular
basis. Hence, only those subsets of relationships need to be considered for optimizing the CMP process. In this investigation,
CMP process was characterized for polishing a thin layer of silicon dioxide on top of a silicon wafer. Statistical analysis
of the experimental data was performed to obtain the order of significance of the input variables (machine and material parameters
and their interactions). Both linear and logarithmic regression models were developed and used to determine optimum process
conditions for maximizing MRR and minimizing WIWNU. While the main input parameters were responsible for maximum MRR, interaction
parameters were found to be responsible for minimizing WIWNU. This may vary for different materials and polishing environments.
PACS 81.00.00; 81.05.Gc; 81.65.Ps 相似文献