Specific resistivity of dislocations and vacancies for super-pure aluminium at 4.2 K determined in-situ and post-recovery deformation and correlated to flow stress

ABSTRACT

The evolution of dislocations during shape-change of metal forms results from microstructural shear mechanism that is essential to enhance ductility. However, at room temperatures for face-centred cubic metals, this evolution results in the generation of vacancies that tend to form nano-voids, the growth of which leads to ductile failure. The correlated occurrence of dislocations and vacancies may be differentiated using the change of resistivity with plastic strain at 4.2?K, because resistivity is very sensitive to single vacancies compared to the formation of stacking faulted defects and dislocations. In order to assess the microstructure, the specific resistivity of these defect species was measured at 4.2?K, whereby thermal recovery processes are non-existent. The resistivity per dislocation line-length per volume was determined to be 1.87?×?10^?25?Ωm³ for super-pure aluminium. The change in resistivity directly correlated to the shear flow stress squared. Vacancy-like defects formed during plastic flow were correlated to the recoverable resistivity after 298?K anneal and the derived volume fraction (C_V) from mechanical data. The magnitude could be expressed as 12.9?×?10^?9?Ωm per C_V in % or as 1.21?×?10^?25?Ωm³ in terms of line-length of vacancies per volume. The choice of representation depends on the presumed vacancy distribution. However, the recoverable flow stress upon 298?K anneal only appear to be proportional to √ C_V at low strains; that is, at high strains the generated vacancies had transformed to defects that give rise to a small decrease in resistivity but a more notable increase in the flow stress. The possible mechanisms for this transformation are discussed.     

Calculations of electron inelastic mean free paths. XII. Data for 42 inorganic compounds over the 50 eV to 200 keV range with the full Penn algorithm

We have calculated inelastic mean free paths (IMFPs) for 42 inorganic compounds (AgBr, AgCl, AgI, Al₂O₃, AlAs, AlN, AlSb, cubic BN, hexagonal BN, CdS, CdSe, CdTe, GaAs, GaN, GaP, GaSb, GaSe, InAs, InP, InSb, KBr, KCl, MgF₂, MgO, NaCl, NbC_0.712, NbC_0.844, NbC_0.93, PbS, PbSe, PbTe, SiC, SiO₂, SnTe, TiC_0.7, TiC_0.95, VC_0.76, VC_0.86, Y₃Al₅O₁₂, ZnS, ZnSe, and ZnTe) for electron energies from 50 eV to 200 keV. These calculations were made with energy-loss functions (ELFs) obtained from measured optical constants for 15 compounds while calculated ELFs were utilized for the other 27 compounds. Checks based on ELF sum rules showed that the calculated ELFs were superior to the measured ELFs that we had used previously. Our calculated IMFPs could be fitted to a modified form of the relativistic Bethe equation for inelastic scattering of electrons in matter for energies from 50 eV to 200 keV. The average root-mean-square (RMS) deviation in these fits was 0.60%. The IMFPs were also compared with a relativistic version of our predictive Tanuma-Powell-Penn (TPP-2M) equation. The average RMS deviation in these comparisons was 10.7% for energies between 50 eV and 200 keV. This average RMS deviation is almost the same as that found in a similar comparison for a group of 41 elemental solids (11.9%) although relatively large deviations were found for cubic BN (65.6%) and hexagonal BN (34.3%). If these two compounds are excluded in the comparisons, the average RMS deviation becomes 8.7%. We found generally satisfactory agreement between our calculated IMFPs and values from other calculations and from experiments.     

Liquid-phase epitaxy of ZnSe from Zn-Ga solution

Undoped or Ga doped ZnSe single crystal layers with thicknesses between 3 and 13 μm were grown on ZnS_xSe_1?x (0 ? x ? 1) single crystal substrates by liquid phase epitaxy in a sealed tube system from a Zn or Zn-Ga alloy solution. Smooth and uniform epitaxial layers with high crystal perfection were obtained on the (111)- and (100)-oriented substrates. All the epitaxial layers were n-type and highly conductive (0.1 < ? < 10 Ω cm). A remarkable enhancement of the blue part of the photoluminescence spectra at room temperature was observed for the epitaxial layers grown from the Zn-Ga alloy solution.     

Lithium‐Ion Endohedral Fullerene (Li+@C60) Dopants in Stable Perovskite Solar Cells Induce Instant Doping and Anti‐Oxidation

Herein, we report use of [Li⁺@C₆₀]TFSI^? as a dopant for spiro‐MeOTAD in lead halide perovskite solar cells. This approach gave an air stability nearly 10‐fold that of conventional devices using Li⁺TFSI^?. Such high stability is attributed to the hydrophobic nature of [Li⁺@C₆₀]TFSI^? repelling moisture and absorbing intruding oxygen, thereby protecting the perovskite device from degradation. Furthermore, [Li⁺@C₆₀]TFSI^? could oxidize spiro‐MeOTAD without the need for oxygen. The encapsulated devices exhibited outstanding air stability for more than 1000 h while illuminated under ambient conditions.     

Photoinduced metal surface deposition in amorphous GeSAg films

Metallic silver photosurface deposition (PSD) and photoinduced stractural transformation in amorphous GeSAg films containing a large quantity of Ag have been studied. The photosensitivity of the films was greatly enhanced by the addition of gold, and also the morphology and distributing density of the deposits were markedly influenced. It has been found that the PSD effect can be reversed by a thermal annealing.     

Double nitro-Mannich reaction utilizing in situ generated N-trimethylsilylaldimines: novel four-component one-pot synthesis of nitroimines

Four-component synthesis of nitroimine derivatives (3) via double nitro-Mannich reaction was carried out in which nitroalkane, two moles of aldehyde, and lithium hexamethyldisilazide (LHMDS) were coupled in one-pot. In situ generated N-trimethylsilylaldimine was reacted with nitroalkane dianion followed by the second addition of the resulting nitrogen anion to the aldimine and the subsequent elimination of bistrimethylsilylamine furnished nitoroimine. The reaction was proceeded with erythro selectivity.     

Optimized conditions for high-performance liquid chromatography analysis of oligosaccharides using 7-amino-4-methylcoumarin as a reductive amination reagent

Reductive amination reaction using 7-amino-4-methylcoumarin (AMC) as a fluorescent probe enabled analyses of glycoproteins' monosaccharides and N-linked oligosaccharides. Reductive amination of N-acetylhexosamines and AMC using sodium cyanoborohydride or dimethylamine-borane complex indicated slight recovery of derivatives, but pyridine-borane achieved better recoveries. Reversed-phase high-performance liquid chromatography (HPLC) analyses of monosaccharides constituting glycoprotein glycans using fluorimetric detection revealed linearity for 0.2fmol to 1pmol, with less than 5% RSD quantitation reproducibility. Reversed-phase HPLC analyses of glycoprotein glycans, combined with negative-ion electrospray ionization mass spectrometry (LC-ESI-MS), enabled their structural determination. Using this highly hydrophobic reagent, AMC-labeled oligosaccharides displayed one-order to two-order higher ESI-MS intensity than derivatives labeled using other reagents.     

Burning velocity measurements of fluoropropanes by the spherical-vessel method

Burning velocity measurements of six types of fluoropropanes including structural isomers were carried out in order to understand the flammability of hydrofluorocarbons (HFC). The burning velocity (S_u) was determined by applying a spherical flame model to the pressure rise during combustion, which was measured at room temperature and at initial pressures of 80-107 kPa over a wide range of HFC/air concentrations. The maximum S_u of 1-fluoropropane (HFC-281fa), 2-fluoropropane (HFC-281ea), 1,3-difluoropropane (HFC-272fa), 2,2-difluoropropane (HFC-272ca), 1,2,3-trifluoropropane (HFC-263ea), and 1,1,1-trifluoropropane (HFC-263fb) was 35.0, 31.8, 31.9, 21.2, 25.7, and 14.5 cm s⁻¹, respectively. Note that the maximum S_u of HFC-263ea was appreciably higher than that of HFC-272ca, which shows the importance of the F-atom distribution, as well as of the F/H ratio in the HFC molecule. The results of equilibrium calculation for these HFCs showed that S_u is positively correlated with the flame temperature and the concentrations of the active chain carriers H and OH in the flame. We conducted a trial to interpret the magnitude of S_u by means of the effects of substituents for C₁-C₃ HFCs. As a result, it has been found that the order of inhibition efficiency for S_u decreases in the order of CF₃ > CF₂ > CF.