极性晶体中强耦合表面磁极化子特性

研究极性晶体中表面磁极化子的特性。采用Huybrechts线性组合算符和幺正变换方法,导出了晶体中强耦合表面磁极化子处于基态的振动频率和有效哈密顿量,讨论了坐标z的两种极限情况,对RbCl晶体进行了数值计算。结果表明:振动频率和平行有效哈密顿量随磁场的增加而增大。     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

Four-State Model for Three-Branch Molecule＇s Two-Photon Absorption Properties

We present a four-state model for calculating the two-photon absorption of multi-branched molecules by using the time-depended function method, The numerical results indicate that the two-photon absorption cross section has a strong enhancement for three-branch molecules compared to two-branch structures, The maximal two-photon-absorption cross section is 2.358 × 10^-47 cm^4s/photon, At the same time, the charge-transfer process for the charge-transfer states is visualized in order to explain mechanism about the maximal TPA cross section.     

Investigation of Impurity Ion Transport with Laser Blow-off in HL-2A Tokamak

Non-recycling impurities are injected into ohmic HL-2A plasma for the first time. The impurities of titanium and aluminium are injected in the discharges with varying plasma density and current. The convection and diffusion process of the injected impurity ions during the inward phase are qualitatively investigated. The results show that the transport of impurities is much slower in the central region of the plasma than outside of it and that it is greatly enhanced during sawtooth crashes.     

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO₂. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.     

气相色谱-质谱联用法测定维生素C泡腾片中的甜蜜素

采用气相色谱-质谱(GC-MS)选择离子监测法(SIM),建立了准确可靠、灵敏度高、快速简便的测定维生素C泡腾片中甜蜜素含量的新方法.样品中的甜蜜素衍生后用有机试剂提取,在选择离子模式下进行测定,以保留时间和特征离子比例进行定性,单离子定量.甜蜜素的线性范围为0.05-10mg/L,检出限为0.6mg/kg,回收率为90.5%-96.9%,相对标准偏差小于4.4%.方法分析所用时间短,结果准确可靠,选择性好,适用于维生素C泡腾片中甜蜜素含量的检验.     

激光捕获技术及其发展

激光捕获技术是利用光辐射力来捕捉、移动和操纵微粒的先进技术。光镊即单光束梯度力光阱是通过在高度会聚的激光束束腰附近所产生的极高的场强梯度来形成皮牛顿量级的力,可以三维地捕获和操纵微小粒子。阐述了激光捕获技术的模型和原理以及系统的基本结构;追踪了激光捕获技术的最新研究进展;介绍了非高斯型光阱、光纤光阱和全息光镊等几种特殊形式,并分析了每种形式的特点。展望了激光捕获技术的发展前景。     

H原子与CO2分子碰撞的化学反应与能量转移

用时间分辨傅立叶红外发射光谱的方法对H原子与CO2分子的碰撞动力学进行了实验研究．用紫外激光光解的方法分别制备出三个不同平动能为174．7、241．0和306．2 kJ／mol的氢原子,并引发H CO2→OH CO反应．观察到了反应的产物,即振动激发的CO (v≤2)．同时也看到了在H原子与CO2分子的碰撞中发生高效的T- V能量转移．CO2的反对称伸缩模的最高振动能级为v=4．化学反应与能量转移的速率之比大约为10．     

溶胀后的弹性印章进行毛细微模塑

用溶胀后的聚二甲基硅氧烷弹性印章进行毛细微模塑,得到了聚苯乙烯丙酮溶液的微四方点阵图案．较少的PS溶液滴加量会造成孤立不相连的微点阵图形．同时还获得了由于在收缩过程中各部分溶剂挥发速度不一造成的特殊的微点阵图案．     

用锌有机源和CO2/H2混合气源PECVD沉积ZnO薄膜

在等离子体作用下,以CO2/H2混合气为氧源,Zn(C2H5)2锌为锌源,在单晶硅上生长出高度择优取向的氧化锌薄膜。X射线衍射分析表明,薄膜为六方结构,c轴高度择优;原子力显微镜观察到晶粒是有规律地按六方排布,薄膜的表面粗糙度较小;从光致发光谱还发现在380 nm处有非常强的紫外峰。