Synthesis, Crystal Structure and Binding Properties of 6H,7H,13H,14H-5a,6a,7a,12a,13a,14a- Hxaazbenz[f]indeno[2,1,8-ija]naphth[2,3- f]azulene-14b,14c-dicarboxylic-5,8,12,15- tetrahydro-6,8,14-trioxo-diethyl Ester

The title compound 6H,7H,13H,14H-5a,6a,7a,12a,13a,14a-hxaazbenz[f]indeno[2,1,8- ija]naphth[2,3-f]azulene- 14b, 14c-dicarboxylic-5,8,12,15-tetrahydro-6,8,14-trioxo-diethyl ester （C27H26N6OT, Mr = 546.54） has been synthesized and its crystal structure was determined by single-crystal X-ray diffraction. The crystal belongs to monoclinic, space group P211c with a = 8.8129（6）, b = 17.9883（13）, c = 16.2623（11）A, β = 98.770（2）°, V = 2547.9（3）A3, Z = 4, De= 1.425 g/cm3, p（MoKa） = 0.105 mm-1, F（000） = 1144, the final R = 0.0672 and wR = 0.1162 for 2275 observed reflections with I 〉 2σ（I）. The crystal structural analysis shows that intermolecular C-H...O hydrogen bonds and π-π stacking interactions result in a three-dimensional framework. The binding study by fluorescence spectroscopy titration showed that he title compound can selectively recognize Fe3＋ with fluorescence quenching.     

撰写教育教学论文是提升教学研究的好手段

简述了做好教学研究是提高教育教学质量的关键,撰写教育教学论文是提升教学研究的好手段。明确了撰写教育教学论文的目的和内容。以教学研究中撰写的论文示例强调了写好论文的基础来源于扎实的教学实践,功力来源于科学研究,做法来源于把教学研究当作科学研究那样去做。     

官能化罗丹明基金属阳离子荧光探针

重金属离子对环境和生物体具有极强的生理毒性,故高选择性和高灵敏度的离子检测荧光探针的研究有着重要意义。荧光分子探针在表达分子间识别行为以及复杂的环境、生命体系的内状态信息方面具有优异的性能,已广泛深入的用于构建新型功能性探针分子。本文综述了近年来基于罗丹明的金属阳离子如Hg₂₊、Cu₂₊、Fe₃₊等荧光分子探针的研究进展,包括探针的结构特征、检测机理、检测水平,更重要的是其在环境检测、生物成像、分子器件等方面的新应用,并对荧光探针所面临的问题和发展前景做了分析。     

Synthesis, crystal structures, electrochemical studies and anti-tumor activities of three polynuclear organotin(IV) carboxylates containing ferrocenyl moiety

A novel ferrocene-containing ligand 3-trifluoromethyl-5-ferrocenyl -pyrazol-1-yl-acetic acid (LCOOH) and three organotin(IV) carboxylate derivatives [Ph₄Sn₂O(OCH₃)(OOCL)]₂(1), [BuSnO(OOCL)]₆(2) and [Bu₄Sn₂O(OOCL₂)₂] (3) have been synthesized and structurally characterized by means of FT-IR, elemental analysis, ¹H NMR, ¹¹⁹Sn NMR, X-ray crystallography and cyclic voltammetry. Both complexes 1 and 3 are centrosymmetric with ladder framework. Complex 2 is a hexanuclear one with drum structure. Furthermore, their anti-tumor activities were also evaluated, using HepG2 human hepatocellular liver carcinoma cells, A549 human lung carcinoma cells and B16-F10 melanoma cells. Complex 1 displayed the best cytotoxicity and can be pointed out as a promising substrate to be subject of further investigations.     

A new lignan and other constituents from Zanthoxylum armatum DC

A new lignan (1), named armatumin, along with 25 known compounds, was isolated from Zanthoxylum armatum. The structure of compound 1 was elucidated using spectroscopic methods. Compounds 7, 8, 11, 13, 16, 20 and 21 were first isolated from Z. armatum and compounds 14 and 19 were isolated for the first time from Rutaceae.     

方形颗粒在黏弹性流体中的沉降特性

采用有限元任意拉格朗日-欧拉(ALE)法对方形颗粒在黏弹性流体中的沉降特性进行研究。通过直接数值模拟得到了不同弹性数下方形颗粒的稳定取向角的变化情况,并讨论了颗粒长宽比和通道宽度对其沉降特性的影响。结果表明,当方形颗粒在黏弹性流体中沉降时,弹性数存在一个临界值。当弹性数小于临界值时,颗粒的稳定取向为长轴方向垂直于重力方向;当弹性数大于临界值时,颗粒的稳定取向为长轴方向平行于重力方向。颗粒长宽比和通道宽度对其沉降特性都有一定的影响。长宽比大的颗粒在沉降过程中的取向角和横向漂移的振幅更大。弹性数的临界值随着长宽比的增大而减小,随着阻塞比的增大而增大。     

原子力显微技术研究ZnO纳米棒的压电放电特性

在原子力显微镜的接触扫描模式下,研究了半导体ZnO纳米棒的压电放电特性.采用两步湿化学法制备沿c轴择优生长的ZnO纳米棒阵列;利用镀Pt探针接触扫描ZnO纳米棒获得峰值达120 pA电流脉冲,脉冲持续时间可达30 ms,电流脉冲与纳米棒的形貌存在对应关系.镀Pt探针与ZnO纳米棒接触形成肖特基二极管,I-V特性研究表明放电的ZnO纳米棒压电电势必须大于03 V,以驱动肖特基二极管并输出电流;放电时肖特基二极管的结电阻达吉欧(GΩ)量级,是影响压电电势输出的主要因 关键词： ZnO 纳米棒 压电放电 肖特基接触     

高空核爆炸瞬发辐射电离效应的数值模拟

采用蒙特卡罗方法模拟了高空核爆炸瞬发辐射中子、γ射线、X射线电离大气的过程,给出了几种爆炸场景下瞬发辐射产生的附加电离电子密度空间分布.针对大气密度随高度非均匀连续变化的特性,采用质量距离抽样方法取代常用的步长抽样方法,无需根据大气密度随高度的变化进行分层处理,提高了计算效率.结果表明:对于不同的爆高,瞬发辐射电离分布存在显著的差异;随着爆高的增加,瞬发辐射附加电离区范围增大,但电子密度的峰值减小. 关键词： 高空核爆炸 瞬发辐射 大气电离 蒙特卡罗方法     

Structural and magnetic properties of MoS2 monolayer zigzag nanoribbon doped by Ti,V, Cr,and Mn

In order to find new functions of monolayer MoS₂ in nanoelectronics or spin electronic devices, using spin-polarized density functional theory (DFT) calculations with on-site coulomb interaction (U), we investigated substitutional doping of Mo atoms of monolayer zigzag MoS₂ nanoribbon (ZZ-MoS₂ NR) by transition metals (TM) (where TM = Ti, V, Cr, Mn) at the Mo-edge, S-edge, and the middle of the NRs. The results of this study indicate the NR widened irrespective of the doped TM position and type, and the Mo-edge was found as the easiest substitutional position. For ZZ-MoS₂ NR doped by Mn, Cr or V atoms, the preferred magnetic coupling state is the edge atoms of S at the S-edge, exhibiting the same spin polarization with TM (named the FM1 state), attributing the NR with metallic magnetism. For Ti-doped monolayer ZZ-MoS₂ NR, in addition to the FM1 state, other preferred magnetic coupling state was observed in which the edge atoms of S at the S-edge exhibit the opposite spin polarization with that of Ti (named the FM2 state). Thus, the NR doped by Ti atom possesses metallic (FM1 state) or half-metallic (FM2 state) magnetism. The total magnetic moments of the ZZ-MoS₂ NR doped by TM follows a linear relationship as a function of the TM dopants (Mn, Cr, V, and Ti). Under $>4\text{\%}$ applied strain, the NR doped by Ti atom only presents the characteristics of half-metallic magnetism as the initial one in the FM2 state, and its total magnetic moment always remained 0 μB, i.e., it was not affected by the width of the NR. This study provides a rational route of tuning the magnetic properties of ZZ-MoS₂ NRs for their promising applications in nanoelectronics and spin electronic devices.     

Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si（001） Studied by Conductive Atomic Force Microscopy

Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a certain fast sweep rate range, a novel current peak is observed in the current-voltage characteristics of the quantum dots. The current peaks are detectable only during the backward voltage sweep immediately after a forward sweep. The current peak position and intensity are found to depend strongly on the voltage sweep conditions. This kind of current-voltage characteristic under fast sweep is very different from the ordinary steady state current behaviour of quantum dots measured previously. trapping in the potential well formed bottom Si substrate. The origin of this phenomenon by the quantum dot sandwiched can be attributed to the transient hole between the native oxide layer and the