利用新构建势能面3A研究S(3P)+H2→HS+H反应含时波包量子散射

利用高精度从头算能量点构建三重态³A' 势能面. 单点能计算采用的方法是完全活性空间自洽场和多组态相互作用,计算中所用的基组是aug-cc-pV5Z,并利用多体展开方法结合AP函数形式对所有能量点进行了拟合. 在新构建的势能面基础上,在平动能0.8～2.2 eV进行了含时波包散射计算,计算中同时采用了离心突然近似和紧耦合方法. 另外还对初始振动态ν=0～3(j=0)情况下的总反应几率进行了计算,结果发现初始振动激发对该体系有很大的增强作用.     

Analysis of absorption performances of anechoic layers with steel plate backing

Rubber layers with air-filled cavities or local resonance scatters can be used as anechoic coatings. A lot of researches have focused on the absorption mechanism of the anechoic coatings. As the anechoic coatings are bonded to the hull of submarine, the vibration of the hull should not be neglected when the analysis of the absorption characters is carried out. Therefore, it is more reasonable to treat the anechoic coating and the backing as a whole when the acoustic performance is analyzed. Considering the effects of the steel plate backing, the sound absorption performances on different models of anechoic coatings are investigated in this paper. The Finite Element Method is used to illustrate the vibrational behaviors of the anechoic coatings under the steel backings by which the displacement contours is obtained for analysis. The theoretical results show that an absorption peak is induced by the resonance of the steel slab and rubber layer. At the frequency of this absorption peak, the steel plate and the coating vibrates longitudinally like a mass-spring system in which the steel slab serves for mass and the coating layer is the spring. To illuminate the effects of the steel slab backing on the acoustic absorption, the thicknesses of the steel slab and the anechoic layer are discussed. Finally, an experiment is performed and the results show a good agreement with the theoretical analysis.     

Influence of substrate bias voltage on structure and properties of the CrAlN films deposited by unbalanced magnetron sputtering

The CrAlN films were deposited on silicon and stainless steel substrates by unbalanced magnetron sputtering system. The influence of substrate bias on deposition rate, composition, structure, morphology and properties of the CrAlN films was investigated. The results showed that, with the increase of the substrate bias voltage, the deposition rate decreased accompanied by a change of the preferred orientation of the CrAlN film from (2 2 0) to (2 0 0). The grain size and the average surface roughness of the CrAlN films declined as the bias voltage increases above −100 V. The morphology of the films changed from obviously columnar to dense glass-like structure with the increase of the bias voltage from −50 to −250 V. Meanwhile, the films deposited at moderate bias voltage had better mechanical and tribological properties, while the films deposited at higher bias voltage showed better corrosion resistance. It was found that the corrosion resistance improvement was not only attributed to the low pinhole density of the film, but also to chemical composition of films.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

HOMOCLINIC ORBITS FOR LAGRANGIAN SYSTEMS

The existence of at least two homoclinic orbits for Lagrangian system (LS) is proved, wherethe Lagrangian L(t,x,y) =1/2∑aij(x)yiyj-V(t, x), in which the potential V(t,x) is globallysurperquadratic in x and T-periodic in t. The Concentration-Compactness Lemma and Mini-max argument are used to prove the existences.     

一种双路矢量合成式毫米波预失真线性化器

针对目前行波管放大器模拟预失真技术中存在的幅度和相位特性关联性强的问题,提出一种双路矢量合成式预失真器。该预失真器由90电桥、模拟电调衰减器和反射式二极管预失真电路构成。根据理论分析和ADS软件仿真结果加工了实际电路并进行测试。实测结果表明：在工作频率29～31 GHz和额定输入功率区间内,该电路可实现与行波管特性相反的预失真性能;合理调整两支路偏置电压,可实现相位扩张改变30,而增益扩张变化量小于1 dB的性能,有效减小了模拟预失真器幅度和相位特性的关联性。     

台湾地区高校基础物理教育见闻和一些感想

值台湾地区2015年物理学年会之际,应新竹清华大学邀请,作者一行4人于2015年1月27日至2015年2月5日赴新竹清华大学观摩物理学年会教育分会,并参观考察了台北东吴大学、新竹清华大学、新竹交通大学、高雄中山大学、台中中兴大学和桃园中央大学等校的物理系物理基础教育的情况.文章就10天来的所见所闻以及对有关问题的深入交流介绍给读者,并谈一下自己的感想,谨供同仁参考.     

自组织InAs/GaAs量子点垂直排列生长研究

利用自组织生长InAs/GaAs量子点的垂直相关排列机制，生长了上下两层用6.5nm GaAs间隔的InAs结构.下层InAs已经成岛，由于应力传递效应，上层InAs由二维生长向三维成岛生长的转变提前发生，临界厚度从1.7ML变成小于1.5ML.透射电子显微镜截面象显示形成上下两层高度差别很大的InAs量子点，但是由于两层量子点之间存在强烈的电子耦合，光致发光谱中只有与包含大量子点的InAs层相对应的一个发光峰.     

A 515-nm laser-pumped idler-resonant femtosecond BiB3O6 optical parametric oscillator

We report on an idler-resonant femtosecond optical parametrical oscillator(OPO)based on BiB₃O₆(BiBO)crystal,synchronously pumped by a frequency-doubled,mode-locked Yb:KGW laser at 515 nm.The idler wavelengths of OPO can be tuned from 1100 nm to 1540 nm.At a repetition rate of 75.5 MHz,the OPO generates as much as 400 mW of idler power with 3.1 W of pump power,the corresponding pulse duration is 80 fs,which is 1.04 times of Fourier transform-limited(FTL)pulse duration at 1305 nm.In addition,the OPO exhibits excellent beam quality with M²<1.8 at 1150 nm.To the best of our knowledge,this is the first idler-resonant femtosecond OPO pumped by 515 nm.