吸收式光纤温度传感器的研究

提出了一种利用半导体光吸收谱随温度变化原理设计的半导体吸收式光纤温度传感器.该传感器用GaAs晶片作为温度敏感元件,以光纤作为传光介质,发光二极管作为光源,光电管作为光电转换器件.利用双光束补偿原理,消除了由于光源不稳定产生的干扰.研制出的光纤传感器具有体积小,结构简单,抗电磁干扰,灵敏度高等优点.实验表明:该传感器在－20℃~85℃温度范围内可以达到0.1℃的准确度,可以实现强电磁干扰下的高空飞行器内环境温度的测量.为进一步实现光传飞控系统中的温度测控奠定了基础.     

Upconversion luminescence of Tm^3＋/Yb^3＋ codoped oxyfluoride glasses

Novel oxyfluoride glasses are developed with the composition of 30SiO2-15Al2O3-28PbF2-22CdF2-0.1TmF3 - xYbF3 - （4.9 - x） AlF3（x=0, 0.5, 1.0, 1.5, 2.0） in tool fraction, Furthermore, the upconversion luminescence characteristics under a 970nm excitation are investigated. Intense blue, red and near infrared luminescences peaked at 453nm, 476nm, 647nm and 789nm, which correspond to the transitions of Tm^3＋： ^1D2 →^3F4, ^1G4 →^3H6, ^1G4 →^3F4, and ^3H4 →^3H6, respectively, are observed. Due to the sensitization of Yb^3＋ ions, all the upconversion luminescence intensities are enhanced considerably with Yb^3＋ concentration increasing. The upconversion mechanisms are discussed based on the energy matching rule and quadratic dependence on excitation power. The results indicate that the dominant mechanism is the excited state absorption for those upconversion emissions.     

An exact solution of Fisher equation and its stability

In this paper, the Fisher equation is analysed. One of its travelling wave solution is obtained by comparing it with KdV--Burgers (KdVB) equation. Its amplitude, width and speed are investigated. The instability for the higher order disturbances to the solution of the Fisher equation is also studied.     

金刚石窗口冷却Yb3+∶YAG DPSSL设计

针对高功率二极管重复率抽运的V型非稳腔Yb3+∶YAG激光头，提出了利用金刚石窗口冷却和直接水冷相结合的复合冷却设计.在YAG片的抽运面进行直接水冷，同时在激光提取面利用金刚石窗口冷却介质.金刚石优异的导热性能不仅能够有效地冷却激光介质，还能消除横向的温度梯度，解决了高功率激光器冷却和高功率抽运的矛盾.模拟结果表明对掺杂10 at %厚度为1.6 mm的Yb3+∶YAG片在抽运功率密度为20 kW/cm2，重复频率为10 Hz的条件下，要将最高温度控制在可接受的范围内（比如320 K），周围冷却水的对流换热系数约为4000 W/m2K.     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

采用Lennard-Jones原子间势研究(C60)N分子团簇的结构演化行为

采用描述原子间相互作用的Lennard-Jones势来描述C₆₀分子间的相互作用,考虑了每个C₆₀分子的一定位置取向,并采用最速下降法计算了IH,fcc,hcp,DH及SC五种典型结构满壳层(C₆₀)_N团簇(N<2000)的能量.结果显示:当尺寸较小(N<20)时,IH结构最稳定;当尺寸处于中等(50<N<300)时,HCP结构最稳定;当尺寸较大(300<N 关键词： 60团簇')" href="#">C₆₀团簇 取向 最速下降法 结构演化     

Entanglement detection in the vicinity of arbitrary Dicke states

Dicke states represent a class of multipartite entangled states that can be generated experimentally with many applications in quantum information. We propose a method to experimentally detect genuine multipartite entanglement in the vicinity of arbitrary Dicke states. The detection scheme can be used to experimentally quantify the entanglement depth of many-body systems and is easy to implement as it requires measurement of only three collective spin operators. The detection criterion is strong as it heralds multipartite entanglement even in cases where the state fidelity goes down exponentially with the number of qubits.     

Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.