Preparation of Highly Stable and Photoluminescent Cadmium-Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay

Indium phosphide (InP) quantum dots (QDs) are ideal substitutes for widely used cadmium-based QDs and have great application prospects in biological fields due to their environmentally benign properties and human safety. However, the synthesis of InP core/shell QDs with biocompatibility, high quantum yield (QY), uniform particle size, and high stability is still a challenging subject. Herein, high quality (QY up to 72%) thick shell InP/GaP/ZnS core/shell QDs (12.8 ± 1.4 nm) are synthesized using multiple injections of shell precursor and extension of shell growth time, with GaP serving as the intermediate layer and 1-octanethiol acting as the new S source. The thick shell InP/GaP/ZnS core/shell QDs still keep high QY and photostability after transfer into water. InP/GaP/ZnS core/shell QDs as fluorescence labels to establish QD-based fluorescence-linked immunosorbent assay (QD-FLISA) for quantitative detection of C-reactive protein (CRP), and a calibration curve is established between fluorescence intensity and CRP concentrations (range: 1–800 ng mL⁻¹, correlation coefficient: R² = 0.9992). The limit of detection is 2.9 ng mL⁻¹, which increases twofold compared to previously reported cadmium-free QD-based immunoassays. Thus, InP/GaP/ZnS core/shell QDs as a great promise fluorescence labeling material, provide a new route for cadmium-free sensitive and specific immunoassays in biomedical fields.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

Entropic uncertainty relation in neutrino oscillations

The European Physical Journal C - We study the isentropic evolution of the matter produced in relativistic heavy-ion collisions for various values of the entropy-per-baryon ratio of interest for...     

Controllably asymmetric beam splitting via gap-induced diffraction channel transition in dual-layer binary metagratings

In this work, we designed and studied a feasible dual-layer binary metagrating, which can realize controllable asymmetric transmission and beam splitting with nearly perfect performance. Owing to ingenious geometry configuration, only one meta-atom is required to design for the metagrating system. By simply controlling air gap between dual-layer metagratings, high-efficiency beam splitting can be well switched from asymmetric transmission to symmetric transmission. The working principle lies on gap-induced diffraction channel transition for incident waves from opposite directions. The asymmetric/symmetric transmission can work in a certain frequency band and a wide incident range. Compared with previous methods using acoustic metasurfaces, our approach has the advantages of simple design and tunable property and shows promise for applications in wavefront manipulation, noise control and one-way propagation.     

高压下β-InSe弹性常数、电子结构的第一性原理研究

基于密度泛函理论的第一性原理计算方法,本文研究了高压对β-InSe弹性常数、机械性能和电子结构的影响.在0～20 GPa范围内,随着压力的增大,β-InSe的晶格常数、晶胞体积逐渐减小,结构参数a/a_0、c/c_0、V/V_0单调减小.在0～12 GPa范围内,弹性模量G、E、B和泊松比v随着压力增大而增大,在16 GPa时大幅减小,G、E、B分别减小了34.9%、53.3%、82.9%.随着压力增大,Se-In和In-In原子之间的电荷密度增大,Se-In原子之间的共价键增强,层间距减小.而且,β-InSe在20 GPa时带隙消失,发生了半导体向半金属的相变.     

氮杂冠醚的研究Ⅱ.N-取代苯并氮杂冠醚的1H和13CNMR谱

本文研究了15种新合成的单、双N取代二苯并18冠6的¹H及¹³C NMR谱。结果表明,¹³C NMR谱的化学位移能显示分子的电荷分布,而¹H NMR谱的偶合常数则部份地反映了大环的构象。氮原子的杂入大环结构和取代基的改变对聚醚环上的电荷分布影响的结果说明,这些改变可能会对冠醚的络合作用发生影响。     

拱形试件动态断裂的动光弹分析

本文采用动光弹方法,分析了对带边裂纹的拱形三点弯曲试件在抢击加载条件下的瞬态反应。从多火花动光弹仪记录下来的16幅断裂过程的照片和微机输出的电火花光信号图上,得到了各时刻的等差线图形和裂纹长度。使用运动裂纹尖端附近的应力场解,去计算动应力强度因子。对环氧树脂材料,测定了动态应力强度因子与裂纹扩展速度之间的关系,并给出了当裂纹扩展速度达到410m/s时,为裂纹产生分叉的条件。     

一种基于复数域微分的资料同化新方法

提出了一种基于复数域微分的资料同化新方法. 针对变分资料同化中目标泛函梯度计算复杂和精度不高的问题, 首先利用复变量求导法把梯度分析过程转化为复变泛函的数值计算, 进而高效和高精度地获得梯度值; 然后结合经典的最优化方法, 给出了非线性物理系统资料同化问题的新求解算法; 最后对典型混沌系统和包含“开关”现象的单格点比湿发展方程进行了资料同化数值实验, 结果表明新方法能非常有效地估计出非线性动力预报模式的初始条件. 关键词： 资料同化 复数域微分 非线性物理系统 梯度分析     

Analysis of penetration of axisymmetric projectiles into semi-infinite targets

The process of penetration of a projectile into a semi-infinitetarget is studied in this paper. Using certain assumptions, the propagation of plastic wave in the target is analyzed and the pressure on the surface of penetrator is given. The results calculated from the formulas of this paper agree well with experimental data and numerical results.