MoSi_2(001)表面的氧吸附行为

运用第一原理密度泛函理论方法,首先计算了MoSi_2各清洁表面的表面能,(001)Si-|-Si断面具有较低的表面能,是MoSi_2最可能的解理面;通过生成能及键布居分析研究了单氧原子、双氧原子及氧分子在(001)Si-|-Si断面的吸附行为,发现单氧原子在空位处吸附最稳定,此时O极易与Si结合,得到的Si-O-Si键长及键角与SiO_2的非常接近,表明低浓度下O极易与表面的Si结合生成SiO_2;双氧原子发生空位+顶位吸附时O原子除与Si有强作用外,可与Mo有一定相互作用;氧分子以平行的方式接近空位最有利于吸附,此时氧分子最易分解为氧原子,发生氧原子在空位的吸附.     

L波段高功率线极化径向线阵列天线理论分析与数值模拟

 探索了L波段的高功率线极化径向线阵列天线。基于三角形栅格形式实现了径向线圆形平面阵列天线,分析并给出了径向线并联馈电网络,并以同轴馈电的水平单圆环线极化天线为基础,利用径向线并联馈电网络设计出了间距小于一个波长下L波段高功率线极化径向线阵列天线。研究结果表明：这种结构实现径向线阵列天线的线极化辐射是可行的,该天线在中心频率1.57 GHz下,增益为19.97 dBi,轴比为-52.06 dB,反射系数为0.105 2;在1.37～1.77 GHz的频率范围内增益大于18.64 dBi,轴向轴比值小于-46.45 dB。     

50~250 keV质子入射SiC和Si靶时的电子发射特性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量范围为50~250 keV 的质子入射碳化硅靶和硅靶表面的电子发射产额。实验结果发现,两种半导体靶材的电子发射产额随质子入射能量变化趋势均与作用过程中电子能损随质子入射能量的变化趋势相似。通过分析电子发射的能量来源,发现实验中电子发射产额主要由动能电子发射产额贡献,势能电子发射产额可以忽略不计。两种靶材的电子发射产额均近似地正比于质子入射靶材过程中的电子能损,比例系数B随入射能量略有变化。     

壳模型对143Pm核跃迁几率的计算

原子核跃迁几率理论计算和实验对比是分析描述原子核内部结构的主要手段之一。目前采用重离子核反应观测到^143Pm核（Z=61，N=82）高自旋能级结构:激发态最大能级达x=8397．6keV，对应自旋J=47／2（h=1）。利用核壳模型在计算^143Pm核能级结构及对应的自旋宇称基础上，系统地对其γ级联跃迁链以及纯E2跃迁进行了计算，并与实验数据进行对比。采用OXBASH程序的单粒子跃迁公式计算了^143Pm的跃迁几率。At present, the high spin state of ^143 Pm（Z = 61, N = 82） have been investigated. The level scheme of ^143Pm has been extended up to an excitation energy Ex = 8 397.6 keV and spin J =47/2（ h = 1 ）. Based on the nuclear shell model （NSM）, we have calculated the sequences of γ-ray transition rates and the pure E2 reduced transition probabilities of ^143Pm, and compared with experimental data. The formula of single-particle transition probability in the OXBASH code was applied in this paper.     

241Am-Be中子参考辐射的蒙特卡罗模拟研究

研究用于校准场所中子剂量监测仪表的241Am-Be中子参考辐射场计量特性。采用蒙特卡罗方法模拟了空气自由中子参考辐射(FRNR),GB/T 14055规定的最小尺寸中子参考辐射(SRNR)和实际中子参考辐射(ARNR)中不同检验点处中子周围剂量当量率、散射中子占比和能谱分布特征。研究结果表明,空气对FRNR中的剂量率和能谱分布影响小,近似为理想中子参考辐射;采用5%含硼聚乙烯作屏蔽的最小尺寸SRNR可减少热中子,降低散射中子占比,影锥法不适用于小尺寸中子参考辐射中对散射中子的修正;ARNR中的散射中子更少、占比更低,影锥法所得散射中子占比与理论值基本一致。     

Vertical assembly of carbon nanotubes for via interconnects

The via interconnects are key components in ultra-large scale integrated circuits(ULSI).This paper deals with a new method to create single-walled carbon nanotubes(SWNTs) via interconnects using alternating dielectrophoresis(DEP).Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition.The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%.We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.     

Hierarchical nanowires for high-performance electrochemical energy storage

Nanowires are promising candidates for energy storage devices such as lithium-ion batteries, su- per（：apa.citors and lithium-air batteries. However, simple-structured nanowires have some limitations hence the strategies to make improvements need to be explored and investigated. Hierarchical nanowires with enhanced periormanee have been considered as an ideal candidate for energy storage due to the novel structures and/or synergistic properties. This review describes some of the recent progresses in the hierarchical nanowire merits, classification, synthesis and performance in energy storage applieat, ions. Herein we discuss the hierarchical nanowires based on their structural design from three major categories, including exterior design, interior design and aligned nanowire assembly. This review also briefly outlines the prospects of hierarchical nanowires in morphology control, property enhancement and application versatility.     

Progress in superconducting qubits from the perspective of coherence and readout

Superconducting qubits are Josephson junction-based circuits that exhibit macroscopic quantum behavior and can be manipulated as artificial atoms.Benefiting from the well-developed technology of microfabrication and microwave engineering,superconducting qubits have great advantages in design flexibility,controllability,and scalability.Over the past decade,there has been rapid progress in the field,which greatly improved our understanding of qubit decoherence and circuit optimization.The single-qubit coherence time has been steadily raised to the order of 10 to 100μs,allowing for the demonstration of high-fidelity gate operations and measurement-based feedback control.Here we review recent progress in the coherence and readout of superconducting qubits.     

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128~eV, originates from the vacancy of Cd (V_Cd. The electron trap E1, found at E_c-0.178~eV, is considered to be correlated with the interstitial Cu_i⁼ in CdTe.     

奇妙的惯性力

实际的参考系都不是惯性系，因此必须考虑惯性力．