Pd-Si binary bulk metallic glass

Pd_80+x Si_20−x (x = 0, 1, and 2) binary metallic glasses with the diameter ranging from 7 to 8 mm were prepared by a combination of fluxing and water quenching or air cooling. Thermal analysis results show that with increasing Si content, the glass transition temperature T _g, the initial crystallization temperature T _x and the onset crystallization temperature T _p of Pd-Si binary glassy alloys increase. Moreover, the supercooled liquid region reaches 61 K. It indicates that Pd-Si binary alloys possess large glass forming ability, which can be greatly improved by fluxing treatment. Supported by the National Basic Research Program of China (Grant No. 2007CB613905) and the National Natural Science Foundation of China (Grant Nos. 50671050 and 50431030)     

Exchange enhanced sensitivity gain for solvent-exchangeable protons in 2D 1H-15N heteronuclear correlation spectra acquired with band-selective pulses

Conformational or chemical exchange can cause significant sensitivity loss in NMR spectroscopy through resonance broadening for nuclear spins involved in these processes. While this effect may sometimes be alleviated by manipulating experimental conditions such as temperature, pH, and buffers, conditions optimal for all resonances are not always achievable. As a consequence, any means of recovering or minimizing this exchange-induced sensitivity loss is potentially of significant value in regaining information otherwise lost. We report the experimental observation of significant sensitivity gain for nuclear spins undergoing chemical exchange with solvent (water) at exchange rates ca 1-10 s(-1) in (1)H-(15)N correlation spectra of proteins acquired with band-selective pulses (the SOFAST-HMQC sequence).     

The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

Pb_0.97La_0.02(Zr_0.85Sn_0.13Ti_0.02)O₃ (PLZST 2/85/13/2) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO₂/Si and LaNiO₃(LNO)/SiO₂/Si substrates through a modified sol-gel process. The phase structure and microstructure of PLZST 2/85/13/2 antiferroelectric thin films were analysed by x-ray diffraction (XRD), scanning electron microcopy (SEM) and field-emission SEM (FE-SEM). The antiferroelectric nature of the PLZST 2/85/13/2 thin films on two electrodes was demonstrated by the C-V (capacitance-voltage) and P-E (polarization-electric field) measurement. The maximum polarizations for PLZST 2/85/13/2 films on Pt and LNO electrodes were 42 and 18 μC/cm², respectively. The temperature dependence of the dielectric property of the PLZST 2/85/13/2 films was measured under different dc electric fields. Also, the phase transformation of the PLZST 2/85/13/2 films was studied in detail as a function of temperature and dc electric field.     

LD-end-pumped 60 pm linewidth Tm:YLF laser

Narrow linewidth continuous-wave Tm:YLF laser at room temperature with a Volume Bragg grating and double Fabry-Perot etalons by using the end-pumping configuration was presented. The Tm:YLF laser operates at 1907.3 nm with FWHM of approximately 60 pm. We achieved the maximum output power of 1.92 W when the incident pump power of 13.9 W, corresponding to the optical-to-optical conversion efficiency of 13.8% and slope efficiency of 16.4%.     

Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

Information hiding based on the optical interference principle

An information hiding method based on the optical interference principle is proposed. In this method, a secret image can be obtained by two light beams' interference. One of the beams is modulated by our assigned host image; and the other is modulated by a noise-like complex distribution, which is regard as the encrypted image. The transmission of the encrypted image can be implemented by hiding it in the host image to prevent the communication from being perceived by unauthorized person. In addition, this method can also realize simultaneous encryption and hiding for two images. A series of numerical simulation results are presented to verify the feasibility of our proposed method.     

Nanodot-cavity electrodynamics and photon entanglement

Quantum electrodynamics of excitons in a cavity is shown to be relevant to quantum operations. We present a theory of an integrable solid-state quantum controlled-phase gate for generating entanglement of two photons using a coupled nanodot-microcavity-fiber structure. A conditional phase shift of O(pi/10) is calculated to be the consequence of the giant optical nonlinearity keyed by the excitons in the cavities. Structural design and active control, such as electromagnetically induced transparency and pulse shaping, optimize the quantum efficiency of the gate operation.     

ICP-AES测定南方离子型稀土精矿中稀土配分

采用 ICP- AES同时测定了南方离子型稀土精矿中 L a、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu和 Y组分的含量。选择了合适的分析线 ,确定了各元素的检出限为 0 .0 4— 13.6 μg/L,加标回收率为 90 %— 110 %。方法准确、快速、简便 ,已用于生产实践中     

IR光谱分析PEO/V2O5纳米复合材料结构

聚合物溶液直接嵌入法制备 PEO/ V2 O5纳米复合材料。由红外光谱 (IR)表征了 PEO与氧化物层之间的相互作用。V2 O5干凝胶的钒氧双键 (V=O)主要与层间聚合物 PEO中的醚氧键 (Oet)发生作用 ,以Oet…V=O形式存在     

细胞培养基的吸收光谱研究

使用日本岛津UV 310 1分光光度计分别测量培养了宫颈癌细胞 (Hela)和鼻咽癌细胞 (CNE)的RP MI 16 4 0培养基和DMEM高糖培养基的紫外吸收光谱 ,分析了培养基中蛋白质的紫外吸收特性。RPMI16 4 0培养基的 2 2 7nm吸收峰在培养细胞生长过程中位移至 2 2 2或 2 18nm ,2 78nm的吸收峰位移至 2 80nm ;而DMEM高糖培养基 2 2 4nm吸收峰在培养细胞生长过程中位移至 2 2 1nm附近 ,2 78nm吸收峰基本没有位移。这些位移说明培养基中芳香族氨基酸中各种氨基酸如色氨酸和酪氨酸的含量有变化。也就是说 ,癌细胞在生长过程中对色氨酸和酪氨酸的消耗不是按等量比的。实验也说明Hela和CNE在生长过程中 ,对RPMI 16 4 0培养基和DMEM高糖培养基中氨基酸的消耗是不同的。实验结果为癌细胞生长过程中所需培养基中氨基酸的含量提供了依据