Synthesis of a benzoxazine with precisely two phenolic OH linkages and the properties of its high‐performance copolymers

A phenolic OH‐containing benzoxazine ( F‐ap ), which cannot be directly synthesized from the condensation of bisphenol F, aminophenol, and formaldehyde by traditional procedures, has been successfully prepared in our alternative synthetic approach. F‐ap was prepared by three steps including (a) condensation of 4‐aminophenol and 5,5'‐methylenebis(2‐hydroxybenzaldehyde) (1) , (b) reduction of the resulting imine linkage by sodium borohydride, and (c) ring closure condensation by formaldehyde. The key starting material, (1) , was prepared from 2‐hydroxybenzaldehyde and s‐trioxane in the presence of sulfuric acid. F‐ap is structurally similar to bis(3,4‐dihydro‐2H‐3‐phenyl‐1,3‐benzoxazinyl)methane ( F‐a, a commercial benzoxazine based on bisphenol F/aniline/formaldehyde) except for two phenolic OHs. The phenolic OHs can provide reaction sites with epoxy and 1,1'‐(methylenedi‐p‐phenylene)bismaleimide (BMI). The structure–property relationships between the thermosets of F‐ap /epoxy, F‐a /epoxy, F‐ap /BMI, and F‐a /BMI were discussed. Experimental data showed that thermosets based on F‐ap /epoxy and F‐ap /BMI provided much better thermal properties than those based on F‐a /epoxy and F‐a /BMI. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 2686–2694     

Synthesis of two dihydropyrroloindoledione‐based copolymers for organic electronics

Two novel dihydropyrroloindoledione (DPID)‐based copolymers have been synthesized in a two directional approach and characterized (gel permeation chromatography (GPC), ultraviolet‐visible (UV–vis), cyclic voltammetry, and computational models). These planar, broad absorption copolymers show promise for use in organic electronics, with deep energy levels and low bandgaps. The two‐directional Knoevenagel condensation used demonstrates the versatility of DPID as a useful yet underexploited conjugated unit. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

成分和厚度的依赖

通过调整Mn的成分，系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质，特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时，对于150nm的Ni81Fe19，得到了最大的交换偏置场175kA/m，同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%；高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化，Mn含量越多，其晶格常数越大；制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni１００-xMnx厚度的变化，第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时，Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃，5h退火后，可以有80kA/m的交换偏置场，此时铁磁层磁矩的大小几乎不变. 关键词： Ni81Fe19/Ni100-xMnx 交换偏置场     

电场中Eu原子电离阈移动的实验研究

提出了一种新方法, 精确确定了稀土Eu原子第一电离阈的位置. 先用脉冲电场对Eu原子的高激发Rydberg态进行延时场电离探测, 再通过反向静电场排除光电离和自电离等其他路径所产生的离子信号的干扰, 观察并研究了Eu原子第一电离阈随着电场移动的规律. 由此所确定的零场下第一电离阈的数值与采用其他方法所确定的文献值^{[1, 2]}相一致, 从而验证了该方法的可靠性.     

利用自电离探测技术研究Sm原子Rydberg态光谱

采用孤立实激发与自电离探测技术相结合的方法对Sm原子偶宇称高激发态进行了系统研究.按照不同的自电离通道将所测数据进行了分类和比较,并进行了详细讨论.不仅报道了许多收敛于不同电离限的Rydberg态的能级位置和跃迁的相对强度等信息,而且还把处于同一能域内的Rydberg态和价态进行了辨识.另外,不但提供了一种有效识别不同类型的高激发态的鉴别技术,而且还对处于41800 cm^-1到43800 cm^-1能域内的Rydberg态和价态的光谱特性进行了详细分析和讨论. 关键词： 自电离探测 Rydberg态 Sm原子     

多个侧向链对横向量子线传输性质的调制

利用递推格林函数方法，研究了与多个量子点间无相互作用的量子链相耦合的横向量子线的电子输运特性，发现量子链上格点的个数N_U与侧向无限或有限量子链个数N对横向量子线输运性质的不同调制规律.由计算可知，利用格林函数可以方便的对传输构型及传输链中的格点数进行调解，从而得到各种人为量子器件的输运性质. 关键词： 递推格林函数 无限链 有限链 电子输运     

pn结电容-电压法测量应变SiGe禁带宽度

利用应变SiGe/Si异质pn结电容-电压（C-V）特性确定SiGe禁带宽度的技术.该技术根据SiGe/Si异质pn结C-V实验曲线，计算出 pn结接触电势差，并得到SiGe/Si的价带偏移量和导带偏移量，进而求得SiGe禁带宽度.该技术测试方法简便，其过程物理意义清晰，既适用于分立的SiGe/Si异质pn结，也可直接分析SiGe/Si异质结器件中的SiGe 禁带宽度.实验结果与理论计算及其他相关文献报道的结果符合较好. 关键词： SiGe/Si 异质pn结 C-V 禁带宽度     

Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films

Ultrafast photoelectric characteristic has been observed in La_0.67Ca_0.33MnO₃ films on tilted SrTiO₃ substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ～300 ps and ～700 ps, respectively. The photovoltaic sensitivity was as large as ～500 mV/mJ.     

纳秒激光诱导空气等离子体射频辐射特性研究

开展了波长为532 nm、脉宽为8 ns的纳秒激光诱导空气等离子体射频电磁辐射特性实验研究,基于锥形天线探测空气等离子体在30-800 MHz频谱范围有较强的射频电磁辐射,是等离子体内电偶极子振荡变速运动造成的.实验结果表明:随激光能量增加,30-200 MHz范围内射频辐射强度逐渐变强,但360-600 MHz频率范围射频辐射强度逐渐变弱.等离子体射频辐射的空间分布依赖于入射激光的偏振方向,当激光偏振方向与天线放置方向一致时,该方向上空气等离子体的射频辐射强度高,谱线较丰富.射频辐射总功率随激光能量先增加后降低,采用等离子体电子密度变化对等离子体频率及等离子体衰减系数影响(制约)关系,对射频辐射总功率随激光能量的变化规律进行了解释.     

Cu对用于高速相变存储器的Sb2Te薄膜的结构及相变的影响研究

采用原位X射线衍射仪、拉曼光谱仪和X射线反射仪分别研究了Cu-Sb₂Te 薄膜的微结构、成键结构和结晶前后的密度变化. Sb₂Te薄膜的结晶温度随着Cu含量的增加而增大. 在10 at.%和14 at.% Cu的Sb₂Te薄膜中, Cu与 Te 成键, 结晶相由六方相的Cu₇Te₄、菱形相的Sb及六方相的Sb₂Te构成. 10 at.% 和14 at.% Cu 的Sb₂Te薄膜在结晶前后的厚度变化分别约为3.2%和 4.0%, 均小于传统的Ge₂Sb₂Te₅ (GST)薄膜. 制备了基于Cu-Sb₂Te薄膜的相变存储单元, 并测试了其器件性能. Cu-Sb₂Te器件均能在10 ns的电脉冲下实现可逆SET-RESET操作. SET和RESET操作电压随着Cu含量的增加而减小. 疲劳测试结果显示, Cu 含量为10 at.%和14 at.%的PCRAM单元的循环操作次数分别达到1.3×10⁴和1.5×10⁵, RESET和SET态的电阻比值约为100. Cu-Sb₂Te可以作为应用于高速相变存储器(PCRAM)的候选材料.