基于传播圆补偿像散的被动锁模激光器谐振腔设计方法

由于超短脉冲激光器的谐振腔大都采用多镜折叠的形式,像散已成为影响锁模激光器性能优劣的重要问题.本文提出了一种基于传播圆补偿像散的被动锁模激光器谐振腔设计方法,该方法简单、直观、高效,容易找到补偿像散的最佳位置.理论研究表明,当SESAM位于子午和弧矢传播圆交汇处附近时,SESAM处的子午光斑和弧矢光斑大小几乎相等,像散得到补偿.该谐振腔对外界干扰引起的腔镜振动和热透镜焦距的变化均不敏感,谐振腔的抗干扰性很强.实验研究表明,当SESAM位于子午和弧矢传播圆交汇处附近时,锁模激光器可获得稳定连续的锁模激光脉冲,且激光器的抗干扰性很强.本文的理论研究与实验结果相一致.     

丝氨酸异构体的电子-分子形状共振态及其解离动力学理论研究

Shape resonances of electron-molecule system formed in the low-energy electron attachment to four low-lying conformers of serine (serine 1, serine 2, serine 3, and serine 4) in gas phase are investigated using the quantum scattering method with the non-empirical model potentials in single-center expansion. In the attachment energy range of 0-10 eV, three shape resonances for serine 1, serine 2, and serine 4 and four shape resonances for serine 3 are predicted. The one-dimensional potential energy curves of the temporary negative ions of electron-serine are calculated to explore the correlations between the shape resonance and the bond cleavage. The bond-cleavage selectivity of the different resonant states for a certain conformer is demonstrated, and the recent experimental results about the dissociative electron attachment to serine are interpreted on the basis of present calculations.     

采用直、弯静叶压气机时序效应实验研究

本文实验研究了采用直、弯静叶的某重复级低速压气机在不同时序位置时的总性能及横截面流场特性.在不同流量工况下对压气机整体性能及流场进行了详细测量.结果表明,采用正弯静叶的压气机时序效应相对较弱且喘振裕度有所增加;同时,在压比略有减小的前提下(0.1%级别),凭借消耗扭轴功的大幅F降(3%左右),效率在设计工况下最大可提高...     

相变及空位缺陷对高压下GeO_2光学性质的影响

本文采用第一性原理方法,在100 GPa的压力范围内,计算了GeO_2理想晶体和含锗、氧空位点缺陷晶体的光学性质.吸收谱数据表明,压力诱导的三个结构相变对GeO_2晶体的吸收谱均有影响:第一个相变将导致其吸收边蓝移,而第二和第三相变将使得其吸收边红移.锗和氧空位点缺陷的存在将导致GeO_2的吸收边红移,但氧空位点缺陷引起的红移更明显.尽管如此,分析发现,在100 GPa的压力范围内,压力、相变以及空位点缺陷等因素都不会导致GeO_2晶体在可见光区出现光吸收现象(是透明的).波长在532 nm处的折射率数据显示,在GeO_2的四个相区,其折射率均随压力增加而降低;而且,GeO_2的三个结构相变以及锗、氧空位点缺陷都会导致其折射率有所增大.本文预测,GeO_2有成为冲击光学窗口材料的可能.     

2-甲基-2-丙烯-1-醇的光电离解离研究

利用可调谐真空紫外同步辐射和分子束实验装置在8.0～15.5 eV的光子能量范围内,研究2-甲基-2-内烯-1-醇的光电离解离.测出母体离子和碎片离子:C_4H_8O~+、C_4H_7O~+、C_3H_5O~+、C_4H_7~+、C_4H_6~+、C_4H_5~+、C_2H_4O~+、C_2H_3O~+、C_3H_6~+、C_3H_5~+、C_3H_3~+、CH_3O~+和CHO~+的光电离效率曲线,并获得母体分子的电离能和碎片离子的实验出现势.在B3LYP/6-31+G(d,p)理论水平上,计算光电离过程中母体分子、过渡态和中间体的稳定结构.采用CCSD(T)/cc-pVTZ耦合簇方法计算零点能,得到母体电离能和碎片离子的出现势.通过实验和理论研究,提出2-甲基-2-丙烯-1-醇的光解离路径,分子内氢转移是其中大部分解离途径中的主要过程.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

消荧光现象与表面谐波产生

消荧光现象是激光与物质表面非线性相互作用的结果，这是一种普遍现象。在表面谐波产生的研究中，它常常被忽略。大量研究表明：表面谐波产生与消荧光现象，有着密切的内在联系。本文以消荧光观点详细讨论了表面谐波产生的机制，提出了表面谐波产生的消荧光模型。新机制可归纳为：（ａ）多光子受激吸收产生消荧光光斑，（ｂ）激光热效应等促进自发辐射转向准受激辐射，（ｃ）伴随荧光消失，部分产生荧光的激光能量转换为产生表面谐波     

铋镓共掺的高浓度掺铒石英基光纤中铒离子团簇率的实验研究

使用MCVD法结合溶液掺杂技术制作了铒铋镓共掺的石英基光纤.根据光纤吸收谱，得出其中铒离子浓度是5.24×10²⁵/m³.然后提出了一种新的利用透射率测定掺铒光纤的团簇率的实验方法，该方法相比于以前的方法更简单有效.利用该方法，测得了自制铒铋镓共掺光纤中团簇率.通过与前人的结果相比较，充分说明铋和镓的掺入大大提高了铒离子在石英基光纤中的溶解度，抑制了铒离子形成团簇.