综述了离子束材料实验室在高剂量与高能量离子注入研究方面的新进展,包括高剂量离子注入动态靶的模拟计算MACA程序、多能离子注入深度分布计算、MeV离子引起的HOPG表面操作、MeV离子诱变右旋糖酐生产菌种、高剂量离子注入在45号钢表面形成耐腐蚀的保护层以及在高速工具钢上形成含有大量超细碳化物的耐磨层. The development of high dose ion implantation and high energy ion implantation at the Ion Beam Application Group of IHIP in recent years is reviewed. 相似文献
A composite controller based on a backstepping controller with an adaptive fuzzy logic system and a nonlinear disturbance observer is proposed in this paper to address the disturbance and uncertainty issues in the control of the optoelectronic stabilized platform. The matched and unmatched disturbances and system uncertainty are included in the stabilized platform model. The system's uncertainty and disturbance are approximated and estimated using an adaptive fuzzy logic system and a nonlinear disturbance observer. Moreover, the backstepping control algorithm is utilized to control the system. The simulations are performed in four states to confirm the viability of the proposed control technique. The proportional integral controller, proportional integral-disturbance observer controller, and fuzzy backstepping controller are contrasted with the proposed controller. It has been noted that the proposed controller's instantaneous disturbance's highest value is 5.1°/s. The maximal value of the coupling output for the two gimbals utilizing the proposed controller, however, is 0.0008°/s and 0.0018°/s, respectively. The findings presented here demonstrate that the backstepping controller, which is based on an adaptive fuzzy logic system and a nonlinear disturbance observer, is capable of precise tracking and dynamic tracking of a stabilized platform under disturbance and uncertainty.
GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied. 相似文献