ε-WEAKLY CHEBYSHEV SUBSPACES OF BANACH SPACES

We will define and characterize c-weakly Chebyshev subspaces of Banach spaces. We will prove that all closed subspaces of a Banach space X are ε-weakly Chebyshev if and only if X is reflexive.     

Boundary-value problem for two-dimensional stationary Heisenberg magnet with nontrivial background. I

The method of the inverse scattering transform is used to solve a boundary-value problem on the half-plane for the two-dimensional stationary Heisenberg magnet with nontrivial background corresponding to helicoidal magnetic structures. The boundary conditions are formulated in terms of scattering data, and this leads to the appearance of gaps in the continuous spectrum of the auxiliary linear problem. Trace identities are obtained. The asymptotic behavior of some of the simplest solutions of soliton type is discussed.Scientific-Research Insititute of the Leningrad State University. Translated from Teoreticheskaya i Matematicheskaya Fizika Vol. 90, No. 2, pp. 259–272, February, 1992.     

Relaxor properties of Fe-doped TlInS<Subscript>2</Subscript>

The relaxor properties of Fe-doped TlInS₂ crystals are investigated. It is shown that Fe-doped TlInS₂ compounds exhibit all features inherent in relaxor ferroelectric materials. The temperature range of existence of the microdomain (relaxor) state and the temperature of the transition from this state to a macro-domain state are determined.     

Coulomb breakup of light nuclei in the field of a heavy ion at relativistic collision energies

A simple method for calculating the amplitude and the cross section for the Coulomb breakup of a light nucleus into two fragments in the field of a heavy ion at relativistic collision energies is proposed on the basis of time-dependent perturbation theory. It is shown that the resulting amplitude for the process in question has a correct nonrelativistic limit. The contribution of the longitudinal component of the Coulomb field of a heavy ion tends to zero in the ultrarelativistic limit. A specific implementation of the method is demonstrated by taking the example of the Coulomb breakup reaction ²⁰⁸Pb(⁸B, ⁷Bep)²⁰⁸Pb at various collision energies. The results are found to be in agreement with experimental data.     

Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

Films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage characteristics and the spectral dependence of the photocurrent for the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have been analyzed. The grown epitaxial films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have a perfect single-crystal structure with a (111) orientation and a subgrain size of 60 nm. In the epitaxial films at the Si-SiO₂ interfaces between silicon subgrains and SiO₂ nanocrystals, where there are many sites with a high potential, the Sn ions with a high probability substitute for the Si ions and encourage the formation of Sn nanocrystals with different orientations and, as follows from the analysis of the X-ray diffraction patterns, with different sizes: 8 nm (for the (101) orientation) and 12 nm (for the (200) orientation). The current-voltage characteristics of the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) are described by the exponential law J = J ₀exp(qV/ckT) at low voltages (V < 0.2 V) and the square law J = (9qμ _p τ _p μ _n N _d /8d ³)V ² at high voltages (V > 1 V). These results have been explained by the drift mechanism of charge carrier transport in the electrical resistance relaxation mode.     

Optical absorption bistability in quasi-one-dimensional peierls semiconductors

The optical absorption coefficient γ of a thin film of a Peierls semiconductor has been calculated in the dipole approximation for direct interband transitions as a function of intensity I and central frequency ω₀ of a quasi-monochromatic frequency spectrum near the lower optical transition edge. It is shown that the γ(I, ω₀) dependence is strongly nonlinear, and within a certain region of I and ω₀ variation, not single-valued, which indicates the onset of resonator-free optical bistability with increasing absorption.     

Electrical Resistance and Magnetoresistance of Cd3As2–30 mol % MnAs under High Pressures

Physics of the Solid State - The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd3As2 and 30 mol %...     

The Characteristic Cooling Rate and Vitrification of Liquids

Doklady Physics - This work is devoted to analysis and generalization of the kinetic criteria of vitrification using the model of delocalized atoms. The generalized criterion of a...