Representation of type I heterostructure junctionless tunnel field effect transistor for high-performance logic application

In this paper, a gate-all-around junctionless tunnel field effect transistor (JLTFET) based on heterostructure of compound and group III–V semiconductors is introduced and simulated. In order to blend the high tunneling efficiency of narrow band gap material JLTFETs and the high electron mobility of III–V JLTFETs, a type I heterostructure junctionless TFET adopting Ge–Al _x Ga_1?x As–Ge system has been optimized by numerical simulation in terms of aluminum (Al) composition. To improve device performance, we considered a nanowire structure, and it was illustrated that high-performance logic technology can be achieved by the proposed device. The optimal Al composition founded to be around 20 % (x = 0.2). The numerical simulation results demonstrate that the proposed device has low leakage current I _OFF of ~1.9 × 10^?17, I _ON of 4 µA/µm, I _ON/I _OFF current ratio of 1.7 × 10¹¹ and subthreshold swing SS of 12.6 mV/decade at the 40 nm gate length and temperature of 300 K.     

Quantum Teleportation of High-dimensional Atomic Momenta State

Atomic momenta states of the neutral atoms are known to be decoherence resistant and therefore present a viable solution for most of the quantum information tasks including the quantum teleportation. We present a systematic protocol for the teleportation of high-dimensional quantized momenta atomic states to the field state inside the cavities by applying standard cavity QED techniques. The proposal can be executed under prevailing experimental scenario.     

Decoration of carbon nanotube with size-controlled L10-FePt nanoparticles for storage media

In this work, first multi-wall carbon nanotubes (MWCNTs) with outer diameter about 20–30 nm are synthesized by a CVD method; they have been purified and functionalized with a two-step process. The approach consists of thermal oxidation and subsequent chemical oxidation. Then, monosize FePt nanoparticles along carbon nanotubes surface are synthesized by a Polyol process. The synthesized FePt nanoparticles are about 2.5 nm in size and they have superparamagnetic behavior with fcc structure. The CNTs surfaces as a substrate prevent the coalescence of particles during thermal annealing. Annealing at the temperature higher than 600 ^°C for 2 h under a reducing atmosphere (90 % Ar + 10 % H₂) leads to phase transition from fcc to fct-L1₀ structure. So, the magnetic behavior changes from the superparamagnetic to the ferromagnetic. Furthermore, after the phase transition, the FePt nanoparticles have finite size with an average of about 3.5 nm and the coercivity of particles reaches 5.1 kOe.     

Determination of Epinephrine in Pharmaceutical Formulation by an Optimized Novel Luminescence Method Using CdS Quantum Dots as Sensitizer

In this article, a novel chemiluminescence method using water-soluble CdS quantum dots (QDs) as sensitizers is proposed for the chemiluminometric determination of epinephrine. The method is based on the quenching effect of epinephrine on the chemiluminescence emission generated by the mixing of CdS quantum dots (QDs) with hydrogen carbonate (HCO₃ ^-) in the presence of hydrogen peroxide (H₂O₂) in an alkaline medium. The optimization of variables influencing the chemiluminescence response of the method has been carried out by using experimental design. Under the optimal conditions, there is good linear relationship between the relative chemiluminescence intensity and the concentration of epinephrine over the range of 5?×?10^?9–1?×?10^?6?molL^?1 with a 3σ detection limit of 5?×?10^?11?molL^?1. The method has been successfully applied to the determination of epinephrine in pharmaceutical formulation and the recovery test was done in human urine.     

铝掺杂ZnMnO纳米晶体的载流子调控铁磁性

通过溶胶-凝胶自燃烧技术合成了Zn_0.95-xAl_xMn_0.05O(x=0、0.03、0.05和0.07)稀磁半导体材料. 并且研究了Al掺杂对Zn_0.95-xAl_xMn_0.05O结构、电学和磁学性质的效果. X射线衍射显示合成的组合物为单相六方晶系纤锌矿型晶体结构,类似于氧化锌.显微图像显示颗粒呈团簇状,但一些单个颗粒呈现六角形纹理. 观察到的电阻率随温度升高(达450 oC)而降低,显示为半导体行为特征.所有组合物具有室温铁磁行为. 饱和磁化强度的值随着Al(载流子)浓度的增加而增加.     

Adaptive non-negative bases for reconstruction of spectral data from colorimetric information

The positive basis functions of the reflectance spectra of Munsell color chips are extracted by using the classical nonnegative matrix factorization method. Different numbers of basis, i.e., 3 to 5, are determined and used as projection spaces. The spectral reflectances of samples are defined in the desired compact spectral spaces and the performances of the spaces are evaluated through the cost of the “lost data” by computing of the root mean square error between the actual and the reconstructed spectra as well as the corresponding color difference values under different viewing conditions. The method is also compared with the most welcomed technique, i.e., principal component analyzing, and its priority is shown to some extent in the three dimensional space. To show the importance of the spectral behaviors of samples in the dataset on the extracted basis and consequently the error of the spectral reconstruction trial, the adaptive non-negative matrix factorization method is introduced and examined in the reconstruction of spectral data from the colorimetric tristimulus values. The suggested method weights the samples in the database proportional to the colorimetric differences between the specimens in the dataset and the sample whose spectral has been aimed, prior to the extraction of all positive bases. The root mean square errors between the actual and the reconstructed spectra as well as the metamerism indices under A and F11 illuminants are calculated and the results show considerable improvement over the classic non-negative matrix factorization method as well as the principal component analyzing technique.     

Photocatalytic activity of ZnO nanoparticles prepared via submerged arc discharge method

ZnO nanostructures were synthesized through arc discharge of zinc electrodes in deionized (DI) water. X-ray diffraction (XRD) analysis of the prepared nanostructures indicates formation of crystalline ZnO of hexagonal lattice structures. Transmission electron microscopy (TEM) images illustrate rod-like as well as semi spherical ZnO nanoparticles with 15–20 nm diameter range, which were formed during the discharge process with 5 A arc current. The average particle size was found to increase with the increasing arc current. X-ray photoelectron spectroscopy (XPS) analysis confirms formation of ZnO at the surface of the nanoparticles. Surface area of the sample prepared at 5 A arc current, measured by BET analysis, was 34 m²/g. Photodegradation of Rhodamine B (Rh. B) shows that the prepared samples at lower currents have a higher photocatalytic activity due to larger surface area and smaller particle size.     

Gap States of ZnO Thin Films by New Methods:Optical Spectroscopy,Optical Conductivity and Optical Dispersion Energy

The optical reflectance and transmittance spectra in the wavelength range of 300–2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 and 600°C.The values of the cross point between the curves of the real and imaginary parts of the optical conductivity ɑ_1 and ɑ_1 with energy axis of films exhibit values that correspond to optical gaps and are about 3.25–3.3 eV. The maxima of peaks in plots dR/dλ and dT/dλ versus wavelength of films exhibit optical gaps at about 3.12–3.25 eV.The values of the fundamental indirect band gap obtained from the Tauc model are at about 3.14–3.2 eV. It can be seen that films annealed at 600°C have the minimum indirect optical band gap at about 3.15 eV. The films annealed at 600°C have Urbach's energy minimum of 1.38 eV and hence have minimum disorder. The dispersion energy d of films annealed at 500°C has the minimum value of 43 eV.     

A beam shaping design for coupling high power diode laser stack to fiber with capability of spectral narrowing and stabilizing

We applied a VHG-FAC lens in our design in this work to collimate the fast axis and lock the output spectrally. We used a beam shaping technique to improve the beam symmetry and power density of a high power diode laser stack with a stripe mirror plate, a V-Stack mirror and polarization beam combining elements. By this technique, the beam of a high power diode laser stack is effectively coupled into a standard 365 μmcore diameter and a NA = 0.22 fiber. By this technique, compactness, higher efficiency, narrower spectral line width and lower production cost of the diodes are possible.     

Electrical beam steering with metal-anisotropic-metal structure

In this numerical study, we present and demonstrate a compact, electrical plasmonic beam-steering device composed of anisotropic material. The splitting angle can be modulated by the external electric or magnetic field. The physical principle of this phenomenon is evaluated from the phase of surface plasmon polaritons and Fabry-Perot (F-P) resonance in slits. Our numerical simulations with finite-difference time-domain (FDTD) technique reveals that wide-angle (±27°) beam steering can be achieved. Moreover, the efficiency increases when increasing the steering angle. A special characteristic of the presented structure gives an opportunity to be used as an efficient element in a high integrated optical device for miniaturization and tuning purposes.