Coherent beam combination of adaptive fiber laser array with tilt-tip and phase-locking control

We present an experimental study on tilt-tip(TT) and phase-locking(PL) control in a coherent beam combination(CBC) system of adaptive fiber laser array.The TT control is performed using the adaptive fiber-optics collimator(AFOC),and the PL control is realized by the phase modulator(PM).Cascaded and simultaneous controls of TT and PL using stochastic parallel gradient descent(SPGD) algorithm are investigated in this paper.Two-fiber-laser-,four-fiber-laser-,and six-fiber-laser-arrays are employed to study the TT and PL control.In the cascaded control system,only one high-speed CMOS camera is used to collect beam data and a computer is used as the controller.In a simultaneous control system one high-speed CMOS camera and one photonic detector(PD) are employed,and a computer and a control circuit based on field programmable gate array(FPGA) are used as the controllers.Experimental results reveal that both cascaded and simultaneous controls of TT using AFOC and PL using PM in fiber laser array are feasible and effective.Cascaded control is more effective in static control situation and simultaneous control can be applied to the dynamic control system directly.The control signals of simultaneous PL and TT disturb each other obviously and TT and PL control may compete with each other,so the control effect is limited.     

Plasmonic planar lens based on stack of metal–insulator–metal waveguides with height tuning

We introduce a technique capable of focusing electromagnetic (EM) waves through plasmonic nanoslits symmetrically arranged along the indented semi-circular surface in silver background. The EM transports through the tuning slits in the form of surface plasmon polaritons (SPPs), and gets the required phase retardations to focus at the focal plane. Due to the subwavelength nature of planar metallic lens, we present the rigorous electromagnetic analysis by using two dimensional (2D) finite difference time domain (FDTD) method. These height-modulated slits with uniform width are demonstrated to have unique advantages in beam manipulation. In combination with previous studies, it is expected that our structure with small number of slits could lead to realization of optimum designs of plasmonic nano-lens.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Improvement of the relative entropy based protein folding method

The “relative entropy” has been used as a minimization function to predict the tertiary structure of a protein backbone, and good results have been obtained. However, in our previous work, the ensemble average of the contact potential was estimated by an approximate calculation. In order to improve the theoretical integrity of the relative-entropy-based method, a new theoretical calculation method of the ensemble average of the contact potential was presented in this work, which is based on the thermodynamic perturbation theory. Tests of the improved algorithm were performed on twelve small proteins. The root mean square deviations of the predicted versus the native structures from Protein Data Bank range from 0.40 to 0.60 nm. Compared with the previous approximate values, the average prediction accuracy is improved by 0.04 nm. Contributed equally to this work Supported by the National Natural Science Foundation of China (Grant No. 30670497), the Beijing Natural Science Foundation (Grant No. 5072002), and the Specialized Research Foundation for the Doctoral Program of Higher Education (Grant No. 200800050003)     

Luminescence enhancement of Eu-doped calcium magnesium silicate blue phosphor for UV-LED application

(Ca_1−x,Eu_x)MgSi_2yO_6+δ blue phosphor was prepared by spray pyrolysis and the photoluminescence properties were optimized by controlling concentration of Si element and the activator content. At y=1.0, the concentration quenching in the luminescent intensity appeared when the Eu²⁺ content (x) was 0.01 (1 at%). Such quenching concentration was changed with the concentration of silicon (y), which was increased with an increase in the quantity of excess Si (y>1.0). The highest luminescent intensity was achieved when the Eu²⁺ content (x) and the Si concentration (y) were 0.04 and 1.3, respectively. According to X-ray diffraction (XRD) analysis, the tetragonal SiO₂ phase was formed as a minor phase when the y value was larger than 1.3. The formation of SiO₂ phase, however, did not reduce but increased the luminescent intensity when the Eu²⁺ content was optimized again. As a result, the luminescent intensity of the phosphor particles optimized in the content of both Si and Eu²⁺ was about 150% improved compared with that of the CaMgSi₂O₆:Eu sample (x=0.01, y=1.0).     

Wide tuning characteristics of double-ring coupled lasers

The wide tuning characteristics of double-ring coupled lasers with/without an extended waveguide are analyzed and optimized using the scattering matrix formalism. To obtain the optimum design schemes of the tunable laser diodes, the cross coupling ratios of two rings, the tuning enhancement factor, the propagation loss of passive waveguides, the optical gain of an active region, and the back and front-facet reflectivity of the waveguide are taken into account. When the coupling ratio of the ring and input/output waveguides is fixed, the extinction ratio and the linewidth are decreased as the tuning enhancement factor is increased, while the tuning range is increased.     

Core-level shifts at the Pt/W(1 1 0) monolayer bimetallic interface

We have measured W and Pt 4f_7/2 core-level photoemission spectra from interfaces formed by ultrathin Pt layers on W(1 1 0), completing our core-level measurements of W(1 1 0)-based bimetallic interfaces involving the group-10 metals Ni, Pd, and Pt. With increasing Pt coverage the sequence of W spectra can be described using three interfacial core-level peaks with binding-energy (BE) shifts (compared to the bulk) of −0.220 ± 0.015, −0.060 ± 0.015, and +0.110 ± 0.010 eV. We assign these features to 1D, 2D pseudomorphic (ps), and 2D closed-packed (cp) Pt phases, respectively. For ∼1 ps ML the Pt 4f_7/2 BE is 71.40 ± 0.02 eV, a shift of +0.46 ± 0.09 eV with respect to the BE of bulk Pt metal. The W 4f_7/2 core-level shifts induced by all three adsorbates are semiquantitatively described by the Born-Haber-cycle based partial-shift model of Nilsson et al. [39]. As with Ni/W(1 1 0), the difference in W 4f_7/2 binding energies between ps and cp Pt phases has a large structural contribution. The Pt 4f lineshape is consistent with a small density of states at the Fermi level, reflective of the Pt monolayer having noble-metal-like electronic structure.     

Vacuum ultraviolet-induced surface modification of cyclo-olefin polymer substrates for photochemical activation bonding

The surface of cyclo-olefin polymer (COP) was treated with vacuum ultraviolet (VUV) light at 172 nm wavelength to improve the wettability and adhesion properties. Through VUV treatment in air, the terminal groups of the COP surface were oxidized into oxygen functional groups, containing CO, CO, and COO components, making the COP surface hydrophilic. The extent of oxygenation was evaluated by XPS and FTIR-ATR spectra, and it was shown that the surface properties, hydrophilicity, and functionalization were dependent on both VUV irradiation distance and irradiation time, which have an effect on the concentration of oxygen functional groups. VUV-light treatment with a short irradiation distance was more effective in introducing oxygen functional groups.     

Structural characterization of β-V2O5 films prepared by DC reactive magnetron sputtering

β-V₂O₅ films were successfully prepared on silicon substrates by direct current (DC) reactive magnetron sputtering. X-ray diffraction (XRD), Raman spectra and field emission scan electron spectroscopy (SEM) were used to characterize the samples. Results revealed that the deposition temperature significantly influenced on the crystal structure of V₂O₅ films in the growth process. When the deposition temperature was below 500 °C, the sputtered film exhibited the α-V₂O₅ structure. However, β-V₂O₅ film was successfully obtained at 550 °C. High deposition temperature might provide V and O ions high mobility and energy in the reactive sputtering process, which induced the metastable β-V₂O₅ phase formed. The thermal stability of β-V₂O₅ film was studied by micro-Raman spectroscopy. The structure of sputtered β-V₂O₅ film was unstable under high temperature conditions (beyond 500 °C).