Observation of two resonant structures in e+ e- -->pi+ pi- psi(2S) via initial-state radiation at Belle

The cross section for e+ e- --> pi+ pi- psi(2S) between threshold and sqrt[s]=5.5 GeV is measured using 673 fb(-1) of data on and off the Upsilon(4S) resonance collected with the Belle detector at KEKB. Two resonant structures are observed in the pi+ pi- psi(2S) invariant-mass distribution, one at 4361 +/- 9 +/- 9 MeV/c2 with a width of 74 +/- 15 +/- 10 MeV/c2, and another at 4664 +/- 11 +/- 5 MeV/c2 with a width of 48 +/- 15 +/- 3 MeV/c2, if the mass spectrum is parametrized with the coherent sum of two Breit-Wigner functions. These values do not match those of any of the known charmonium states.     

One-dimensional structures of Bi2O3 synthesized via metalorganic chemical vapor deposition process

We have demonstrated the synthesis of one-dimensional (1D) structures of bismuth oxide (Bi₂O₃) by a reaction of a trimethylbismuth (TMBi) and oxygen (O₂) mixture at 450 °C. Scanning electron microscopy showed that the product consisted of 1D materials with width or diameters less than 1 μm and lengths up to several tens of micrometers. The X-ray energy dispersive spectroscopy revealed that the materials contained elements of Bi and O. The results of X-ray diffraction and selected area electron diffraction pattern indicated that the obtained Bi₂O₃ were crystalline with monoclinic structure.     

Study of decay mechanisms in B--->Lambdac+ppi- decays and observation of low-mass structure in the Lambdac+p system

Using a sample of 152 x 10(6) BB pairs accumulated with the Belle detector at the KEKB e+e- collider, we study the decay mechanism of three-body charmed decay B- --> Lambdac+ ppi-. The intermediate two-body decay B--->Sigmac (2455)0 p is observed for the first time with a branching fraction of (3.7 +/- 0.7 +/- 0.4 +/- 1.0) x 10(-5) and a statistical significance of 8.4sigma. We also observe a low-mass enhancement in the (Lambdac+p) system, which can be parametrized as a Breit-Wigner function with a mass of (3.35(-0.02)(+0.01) +/-0.02) GeV/c2 and a width of (0.07(-0.03)(+0.04) +/-0.04) GeV/c2. We measure its branching fraction to be (3.9(-0.7)(+0.8) +/- 0.4 +/- 1.0) x 10(-5) with a statistical significance of 6.2sigma. The errors are statistical, systematic, and that of the Lambdac+-->pK- pi+ decay branching fraction.     

Sidewall-insert compound based on ZnO-treated aramid pulp fibers for run-flat tires

Abstract

To improve the endurance performance of run-flat tires by preventing the sidewall from folding at zero air pressure, a master batch of natural rubber and ZnO-treated aramid pulp (AP) is applied to the rubber sidewall-insert-layer compound. The mechanical, viscoelastic, and fatigue properties of the compounds are investigated by varying the AP content, and the endurance performance of actual run-flat tires is assessed. The results indicate that the mechanical properties are improved and the hysteresis is reduced as the AP content increased. The overall trend of the endurance times of the run-flat tires is consistent with the results of the DeMattia tests, constant-strain fatigue tests, and high-temperature tensile tests. The run-flat endurance time of the tire containing one part per hundred rubber (phr) of AP is superior to that of the tire containing 3 phr of AP because of the enhanced dispersion of the AP fibers.     

利用混沌信号幅值实现混沌同步

构造了一个三维混沌系统, 简要分析了该混沌系统的平衡点性质、混沌吸引子相图和Lyapunov指数等特性. 在此基础上, 利用反馈同步思想设计了一种利用混沌信号部分信息实现混沌同步的方法, 完成了三维混沌系统的同步. 该方法仅利用混沌信号幅值信息即可实现两个混沌系统的同步, 其同步建立与混沌信号的极性无关, 此特性可有效提高混沌通信质量. 通过分析系统的条件Lyapunov指数证实该方法的有效性, 数值仿真表明该方法与利用混沌信号全部信息的线性反馈同步法相比, 同步建立时间基本相同.     

The influence of thermally assisted tunneling on the performance of charge trapping memory

We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored.     

Structural and electronic properties of type-I and type-VIII Ba8Ga16Sn30 clathrates under compression

The total energy and electronic structures for type-I (β phase) and type-VIII (α phase) Ba₈Ga₁₆Sn₃₀ clathrates under hydrostatic pressure have been investigated using density functional theory (DFT) calculations. It was found that the type-VIII phase is more stable than the type-I one at ambient conditions and that β→α phase transition can not occur under hydrostatic pressure. The band structures show that the type-I and type-VIII Ba₈Ga₁₆Sn₃₀ are indirect semiconductors with band gaps of 0.24 eV and 0.19 eV, respectively. The results suggested that type-I clathrate Ba₈Ga₁₆Sn₃₀ has a larger value of the thermoelectric (TE) power than that of type-VIII clathrate. We found that pressure tuning changes the k-point of conduction band minimum (CBM) in the Brillouin zone for β-phase, but it is not the case for α-phase. Furthermore, the results show that the pressure can change the interaction between guest atoms and the host lattice, and consequently results in the decrease of the band gap of β-phase and the increase of the band gap of α-phase, indicating that the pressure effect can play an important role in the magnitude of the TE power.     

MPCVD金刚石膜装置中 Ar的光谱特性分析

在MPCVD装置中,通过调节微波功率、气体流量及反应压强,使用高分辨率的多道光学分析仪采集得到Ar的400～440 nm光谱,利用玻耳兹曼"斜率法"得到Ar激发温度Texc. 结果显示:随气体流量增加Texc降低;随着微波功率的增加Texc升高;谱线强度随着功率的增加而上升,在550 W及700 W处开始降低继而又上升,此点是制备金刚石膜的功率关键点.