Low emissivity Ag/Si/glass thin films deposited by sputtering

Si was deposited on the glass substrate as an interlayer for the 2-D growth of Ag thin films because Si has a strong binding energy against Ag and can lead to a negative surface energy change in Ag/glass. The Si interlayer induced an extremely smooth and flat Ag surface, which effectively reduced the resistance and enhanced the reflectance in the IR region. In particular, Ag (9 nm)/Si (3 nm)/glass showed 0.074 emissivity and ∼91% reflectance in the IR region with 67% transmittance in the visible region.     

Task-related modulation of anterior theta and posterior alpha EEG reflects top-down preparation

Background  

Prestimulus EEG alpha activity in humans has been considered to reflect ongoing top-down preparation for the performance of subsequent tasks. Since theta oscillations may be related to poststimulus top-down processing, we investigated whether prestimulus EEG theta activity also reflects top-down cognitive preparation for a stimulus.     

Mechanism of light emission in low energy ion implanted silicon

A silicon wafer implanted with a single low energy (42 keV) silicon ion beam results in strong luminescence at room temperature. The implantation results in the formation of various luminescent defect centers within the crystalline and polymorphous regions of the wafer. The resulting luminescence centers (LC) are mapped using fluorescence lifetime imaging microscopy (FLIM). The emission from the ion-implanted wafer shows multiple PL peaks ranging from the UV to the visible; these emissions originate from bound excitonic states in crystal defects and interfacial states between crystalline/amorphous silicon and impurities within the wafer. The LCs are created from defects and impurities within the wafer and not from nanoparticles.     

Thermodynamic analysis and experimental study on the reduction of mixed oxides including uranium oxide by lithium

In order to determine the operating conditions of an uranium reduction process with U₃O₈-Li-LiCl system, the operating conditions have been evaluated in thermodynamic aspects and the results were experimentally confirmed in this study. All the reduction experiments were conducted in an argon atmospheric glove box, and the resultant degree of reduction was determined by analyzing the product using XRD and TGA. In the results of this study, a reduction yield greater than 95% is achieved within about 3 hours of reaction. The effects of the added quantity of Li and LiCl to the reduction yield of U₃O₈ and the preferential removal of several metal oxides accompanying U₃O₈ in the course of reduction were discussed. For a greater reduction of U₃O₈, an additional 20% of Li is required when compared to the stoichiometric composition. The proper composition of LiCl is about 75% based on the weight of U₃O₈ charged.