SnO<Subscript>2</Subscript> nanowires bridged across trenched electrodes and their gas-sensing characteristics

By using a thermal chemical vapor deposition and Au-catalyzed in situ alignment and growth process, SnO₂ nanowires could be bridged across trenched electrodes. In this process, a complicated and individual alignment process could be avoided and a number of devices can be fabricated in one step in a wafer scale. The gas-sensing characteristics of the developed sensor were significantly better when compared to those of other types of NO₂ sensors reported in the literature. When the concentration of NO₂ was 5 ppm, the sensitivity was higher than 150. Especially, the reaction time of 8–14 s was noticeably fast, which is attributed to the microtrench structure beneath the nanowires. PACS 61.46.Fg; 85.35.Kt; 81.15.Gh     

Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire

Highly [1 1 1]-oriented rhombohedral hetero-structure epitaxy of cubic SiGe semiconductor on trigonal c-plane sapphire was achieved and characterized with two new advanced X-ray diffraction methods to control the formation of primary-twin crystals. The formation of twin crystals on (1 1 1) plane was controlled with growth parameters such that the volume percentage of primary-twin crystal was reduced from 40% to 0.3% compared to the majority single crystal. The control of stacking faults can yield single-crystalline semiconductors without defects or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. In this study, about 94% of all epitaxial layers were fabricated in a single-crystalline phase. We propose the temperature-dependent alignment model of energetically favored majority single-crystalline SiGe layer on c-plane sapphire. This study shows that nearly single-crystalline cubic semiconductors can be grown in the [1 1 1] orientation on the basal (0 0 0 1) planes of selected trigonal crystal substrates.     

The characteristics of solid phase crystallized (SPC) polycrystalline silicon thin film transistors employing amorphous silicon process

We investigated the electrical properties of polycrystalline silicon (poly-Si) thin film transistors (TFTs) employing field-enhanced solid phase crystallization (FESPC). An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact resistance between the active Si and source/drain (S/D) metal instead of ion doping. By using C–V measurement method, we could explain the diffused phosphorous ions (P+ ions) on the channel surface caused a negatively shifted threshold voltage (V_TH) of ?7.81 V at a drain bias of 0.1 V, and stretched out a subthreshold swing (S) of 1.698 V/dec. This process was almost compatible with the widely used hydrogenated amorphous silicon (a-Si:H) TFT fabrication process and also offers a better uniformity when compared to the conventional laser-crystallized poly-Si TFT process because of non-laser crystallization.     

Effect of branched alkyl side chains on the performance of thin‐film transistors and photovoltaic cells fabricated with isoindigo‐based conjugated polymers

New isoindigo and di(thienyl)ethylene‐containing π‐extended conjugated polymers with different branched side chains were synthesized to investigate their physical properties and device performance in thin‐film transistors and photovoltaic cells. 11‐Butyltricosane (S3) and 11‐heptyltricosane (S6) groups were used as side‐chain moieties tethered to isoindigo units. The linking groups between the polymer backbone and bifurcation point in the branched side chain differ in the two polymers (i.e., PIDTE‐S3 and PIDTE‐S6 ). The polymers bearing S6 side chains showed much better charge transport behavior than those with S3 side chains. Thermally annealed PIDTE‐S6 film exhibited an outstanding hole mobility of 4.07 cm² V^?1 s^?1 under ambient conditions. Furthermore, bulk heterojunction organic photovoltaic cells made from a blend film of PIDTE‐S3 and (6,6)‐phenyl C61‐butyric acid methyl ester demonstrated promising device performance with a power conversion efficiency in the range of 4.9–5.0%. © 2015 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 2015 , 53, 1226–1234     

Synthesis of Moracin C and Its Derivatives with a 2-arylbenzofuran Motif and Evaluation of Their PCSK9 Inhibitory Effects in HepG2 Cells

Proprotein convertase subtilisin/kexin type 9 (PCSK9) is a key factor in several cardiovascular diseases, as it is responsible for the elevation of circulating low-density lipoprotein cholesterol (LDL-C) levels in blood plasma by direct interaction with the LDL receptor. The development of orally available drugs to inhibit this PCSK9-LDLR interaction is a highly desirable objective. Here, we report the synthesis of naturally occurring moracin compounds and their derivatives with a 2-arylbenzofuran motif to inhibit PCSK9 expression. In addition, we discuss a short approach involving the three-step synthesis of moracin C and a divergent method to obtain various analogs from one starting material. Among the tested derivatives, compound 7 (97.1%) was identified as a more potent inhibitor of PCSK9 expression in HepG2 cells than berberine (60.9%). These results provide a better understanding of the structure–activity relationships of moracin derivatives for the inhibition of PCSK9 expression in human hepatocytes.     

Evaluation of alumina slurry dispersion by nuclear magnetic resonance relaxation as a comparison to conventional dispersion evaluation methods

In this paper, we evaluated the particle dispersion degree of alumina slurry containing a dispersant by solvent nuclear magnetic resonance (NMR) relaxation and compared it with conventional dispersion evaluation methods such as viscosity, particle size, and sedimentation height measurements. The dispersion of slurry was evaluated via numerical analysis of the transverse relaxation time (T₂). The effect of the changes in different parameters of the experiment in terms of milling time, solid loading, and dispersant amount was investigated by NMR relaxation as well as conventional methods. The results of NMR relaxation measurements revealed that T₂ correlates well with other dispersion evaluation methods; thus, it is an efficient technique to evaluate the dispersion of alumina slurry, specifically, when studying the effect of the change in milling time and dispersion amount.     

Microscopic functional specificity can be predicted from fMRI signals in ventral visual areas

Functional areas specialized for recognition can be activated by a non-preferred stimulus as well as a preferred stimulus. The functional magnetic resonance imaging signals detected in response to different stimuli in an area may have the same or different amplitudes. However, it is uncertain whether the responses originate from the same neuronal populations or heterogeneous ones. To address this concern, we propose a novel method that uses multi-echo echo-planar imaging sequences to evaluate changes in the transverse relaxation profile caused by stimulation. According to this method, the areas related with visual recognition, i.e. fusiform face area and parahippocampal place area, have different transverse relaxation profiles to preferred and non-preferred stimuli, which can be considered as reflecting a difference in neuronal population processing stimuli in those areas. The proposed method can be useful for probing the microscopic functional specificity of brain areas.