Solvothermal synthesis of TiO2: anatase nanocrystals and rutile nanofibres from TiCl4 in acetone

This work reports a new synthetic approach for single‐phase TiO₂ nanomaterials by solvothermal treatment of titanium tetrachloride in acetone at 80–110 °C. Small, uniform, and yet size‐tunable (5–10 nm) anatase titania nanocrystallites were obtained using a low concentration of TiCl₄ in acetone (i.e., at molar ratios of TiCl₄/acetone ≤ 1:15) in the temperature range of 80–110 °C, while rutile nanofibers were synthesized using a high concentration of TiCl₄ (e.g., TiCl₄/acetone = 1:10) at 110 °C. Copyright © 2007 John Wiley & Sons, Ltd.     

拖曳线列阵用光纤水听器的研究

报道了光纤水听器用于拖曳线列阵的研究结果。在保证光纤水听器声相位灵敏度的前提下, 优化设计了光纤水听器的结构,降低了光纤水听器的加速度灵敏度36dB。实验测得在20-1600Hz 频段,该光纤水听器的相位灵敏度为-162．7dB,频段内灵敏度的起伏为±0．7dB,加速度灵敏度小于-30dB。     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Pascal矩阵与Vandermonde矩阵的关系

EI-Mikkawy M证明了对称Pascal矩阵Q_n和Vlandermonde矩阵V_n之间满足矩阵方程Q_n=T_nV_n,这里T_n是一个随机矩阵。本文证明了随机矩阵T_n能够分解成第一类Stirling矩阵和对角矩阵的乘积,得到了矩阵T_n的元素之间的递推关系,从而回答了EI-Mikkawy M的一个公开问题。同时得到了一些与Stirling数相关的组合恒等式。     

带强迫项变系数组合KdV方程的显式精确解

通过构造两个新的Riccati方程组，推广了Riccati方法，使其具有简洁的形式，丰富和发展了已有的结果，借助Mathematica软件，求出了带强迫项变系数组合KdV方程的一些精确解，包括各种类孤波解、类周期解和变速孤波解. 关键词： Riccati方程组 变系数组合KdV方程 强迫项 类孤波解     

A Rapid Solid-phase Synthesis to Soluble Oligothiophene Molecular Wires

A novel method for the preparation of oligothiophene molecular wires is described via a bi-directional solid-phase synthesis. Using an alternating sequence of bromination and Stille coupling reactions, oligomers were obtained up to the heptamer in excellent yield and purity.     

(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20-60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要.     

HL-2Aƫ�����ṹ���켰�ȸ��ɷ���

根据HL-2A装置改造的初步方案,选择优化的偏滤器位形所决定的参数,设计出可采取的偏滤器结构及水冷方式。外靶板和拱顶板上采用双剪切连接件和环向水路具有极向水流的冷却方式。通过ANSYS编码对靶板的热负荷进行分析,结果表明这样的冷却方式在降低流速要求的条件下可以提高靶板表面承载能力。     

Molecular dynamics of MgSiO3 perovskite melting

The melting curve of MgSiO分子动力学 MgSiO3钙钛矿 熔化温度 高压melting temperature, molecular dynamics, high pressureProject supported by the National Natural Science Foundation of China (Grant Nos 10274055 and 10376021),the Natural Science Foundation of Gansu Province, China (Grant No 3ZS051-A25-027) and the Scientific Research Foundation of Education Bureau of Gansu Province, China (Grant No 0410-01).2005-01-125/8/2005 12:00:00 AMThe melting curve of MgSiO3 perovskite is simulated using molecular dynamics simulations method at high pressure. It is shown that the simulated equation of state of MgSiO3 perovskite is very successful in reproducing accurately the experimental data. The pressure dependence of the simulated melting temperature of MgSiO3 perovskite reproduces the stability of the orthorhombic perovskite phase up to high pressure of 130GPa at ambient temperature, consistent with the theoretical data of the other calculations. It is shown that its transformation to the cubic phase and melting at high pressure and high temperature are in agreement with recent experiments.