In situ observation of NaBi(WO4)2 dendrite growth and the study on microstructure of solidification

The dendrite growth process of transparent NaBi(WO₄)₂ with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased in the diffusive-convective region. The growth rate of branch had the same change trends as the arm’s. Based on the EPMA-EDS data of solidification structure of quenched NaBi(WO₄)₂ melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface during the growth process. Supported by the National Natural Science Foundation of China (Grant No. 50331040) and the Innovation Funds from Shanghai Institute of Ceramics, Chinese Academy of Sciences (Grant No. SCX0623)     

GaAs1-xPx中混晶无序与Fe深中心的性质

对不同组分的掺FeⅢ-Ⅴ族混晶GaAs1-xPx,测量了Fe深受主中心空穴热发射的非指数恒温暗电容瞬态及DLTS谱。用混晶无序使Fe深能级展宽的模型理论拟合实验结果,得到Fe能级Gauss型展宽的半宽和中心能级的热发射率,并确定出基态空穴跃迁的中心能级的焓变与组分的关系:先是减少,而后增大,与由光电容方法得到的Gibbs自由能变量与组分x的关系明显不同。 进一步讨论表明,上述两种测量方法得到的Fe中心的激活能不同,可能反映Fe中心的键合状态和混晶无序诱导的品格弛豫的影响。     

单晶和多晶纯铝蠕变过程中的内耗

研究了单晶和多晶纯铝蠕变过程中的低频内耗. 在单晶纯铝中观察到: 内耗在蠕变初期单调下降, 在蠕变第一阶段后期出现了一个显著的时间内耗峰, 在蠕变第二阶段内耗趋于稳定值. 多晶纯铝在类似实验条件下则不出现时间内耗峰. 文中分析了出现时间内耗峰的条件和原因, 认为它是由于蠕变第一阶段中运动位错的阻尼系数逐渐增大所引起的. 文中还从蠕变过程中位错运动的微观机制出发, 推导出了蠕变过程中内耗的表达式, 满意地解释了实验结果. 关键词：     

一种基于粒子滤波的测向定位跟踪算法

基于多站测向定位提供的目标辐射源方位角信息,提出了一种基于粒子滤波的测向定位跟踪算法.该算法采用序贯蒙特卡罗的粒子滤波技术,对目标辐射源方位信息进行粒子滤波融合处理,实现了对机动目标辐射源的无源定位跟踪.仿真实验表明,该算法适用于非线性模型和非高斯噪声的目标跟踪,与传统的基于卡尔曼滤波的多传感器融合跟踪算法相比,定位跟踪更为精确,从而对提高战场电子目标定位跟踪和精确打击具有广泛的应用价值.     

Bivariate Recursive Equations on Excess-of-loss Reinsurance

This paper investigates bivariate recursive equations on excess-of-loss reinsurance. For an insurance portfolio, under the assumptions that the individual claim severity distribution has bounded continuous density and the number of claims belongs to R1 （a, b） family, bivariate recursive equations for the joint distribution of the cedent＇s aggregate claims and the reinsurer＇s aggregate claims are obtained.     

Solvothermal synthesis of TiO2: anatase nanocrystals and rutile nanofibres from TiCl4 in acetone

This work reports a new synthetic approach for single‐phase TiO₂ nanomaterials by solvothermal treatment of titanium tetrachloride in acetone at 80–110 °C. Small, uniform, and yet size‐tunable (5–10 nm) anatase titania nanocrystallites were obtained using a low concentration of TiCl₄ in acetone (i.e., at molar ratios of TiCl₄/acetone ≤ 1:15) in the temperature range of 80–110 °C, while rutile nanofibers were synthesized using a high concentration of TiCl₄ (e.g., TiCl₄/acetone = 1:10) at 110 °C. Copyright © 2007 John Wiley & Sons, Ltd.     

拖曳线列阵用光纤水听器的研究

报道了光纤水听器用于拖曳线列阵的研究结果。在保证光纤水听器声相位灵敏度的前提下, 优化设计了光纤水听器的结构,降低了光纤水听器的加速度灵敏度36dB。实验测得在20-1600Hz 频段,该光纤水听器的相位灵敏度为-162．7dB,频段内灵敏度的起伏为±0．7dB,加速度灵敏度小于-30dB。     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp