Self-limited growth of the CaF nanowire on the Si(5 5 12)-2 × 1 template

The atomic structure and interfacial bonding of the ordered-and-isolated CaF nanowires on Si(5 5 12)-2 × 1 have been disclosed by scanning tunneling microscopy and synchrotron photoemission spectroscopy. Initially, CaF molecules dissociated from thermally deposited CaF₂ molecules are adsorbed preferentially on the chain structures of Si(5 5 12)-2 × 1 held at 500 °C. With increasing CaF₂ deposition amount, one-dimensional (1D) CaF nanowires composed of (113) and (111) facets are formed. The line density of these CaF nanowires increases as a function of deposition amount. Finally, at a submonolayer coverage, the surface is saturated with these 1D nanowires except for the (225) subunit, while the original period of Si(5 5 12)-2 × 1, 5.35 nm, is preserved. It has been deduced by the present studies that, owing to these preferential adsorption of CaF and facet-dependent growth of a CaF layer within a unit periodic length of Si(5 5 12)-2 × 1, such a self-limited growth of the CaF nanowire with a high aspect ratio becomes possible.     

Density-fluctuation-induced swelling of polymer thin films in carbon dioxide

We report an anomalous swelling of polymer thin films in carbon dioxide (CO(2)) which is associated (in both locus and form) with the density fluctuation ridge that forms along the extension of the coexistence curve of gas and liquid in the P-T phase diagram. Neutron reflectivity results showed that CO(2) could be sorbed to a large extent ( approximately 60%) in thin polymer films even when the bulk miscibility of the polymer with CO(2) is very poor. The anomalous swelling is found to scale with the polymer radius of gyration (R(g)) and extends to a distance approximately 10 R(g).     

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.     

Spectroscopic investigation on the electronic structure of a 5d band insulator SrHfO3 in proximity to ferroelectric instability: Comparison with SrTiO3 and SrZrO3

We investigated the high-energy electronic structure of a 5d perovskite SrHfO₃ by using optical spectroscopy and O 1s x-ray absorption spectroscopy. From the combined spectra the values of electronic structure parameters are estimated properly. In particular, the crystal field splitting energy, which is closely associated with the p–d hybridization strength, is as high as ～5 eV, and the Sr 4d bands appear to be strongly mixed with the Hf 5d bands. These findings are discussed in relation to a possible ferroelectric instability in SrHfO₃, and are compared with electronic properties of similar compounds, 3d SrTiO₃ and 4d SrZrO₃.     

Analysis of phantom centering positioning on image noise and radiation dose in axial scan type of brain CT

ABSTRACT

This study examined the dose and image quality according to the position change of a human phantom in a CT scan. This study used an MDCT 128 Slice CT Scanner instrument. An axial scan was performed with a 16 cm CTDI phantom of a human phantom, and the dose was measured using a pencil chamber meter. The phantom was scanned 10 cm above and below the isocenter and 15 cm above the right and left. The position of the phantom is indicated by C-0 in the isocenter position, S-10 in the upper 10 cm, I-10 in the lower 10 cm, R-15 in the right 15 cm, and L-15 in the left 15 cm. The test was performed 30 times using the brain CT protocol to calculate the dose and the dose width product (DWP). The acquired images were analyzed using the ImageJ program. Statistical analysis was performed using SPSS with one-way ANOVA (p < .05). The mean DWP values of the CT scanner were C-0 31.97 mGy·cm, S-10 24.52 mGy·cm, I-10 24.28 mGy· cm, R-15 17.95 mGy·cm, and L15 17.6 mGy·cm. Compared to the isocenter (C-0), the DLP values measured at each site were 23.3% for S-10, 24% for I-10, 43.8% for R-15, and 44.9% for L15. A significant difference in the one-way ANOVA statistical process was observed (p>0.05). C-0 was measured to be 7.42 HU, S-10 7.87 HU, I-10 8.4 HU, R-15 117 HU, and L-15 13.6 HU for evaluating the image quality. Compared to C-0, S-10 was 5.39%, I-10 was 13.2%, R-15 was 57.6%, and L-15 was 83.2%. The PSNR for S-10, I-10, R-15, and L-15 was 17.37, 17.5, 16.62, and 16.37 dB, respectively. A good quality image can be obtained by positioning the subject precisely in the isocenter in the axial scan, if possible, because the irradiated dose to the subject is low, which can lead to an increase in noise in image reconstruction.     

A nano-porous TiO2 thin film coating method for dye sensitized solar cells (DSSCs) using electrostatic spraying with dye solution

The dye coloring process on a nano-porous TiO₂ thin film for DSSCs was studied using an electrostatic spraying (ESS) method. In this study, dye coating experiments were performed using homemade ESS equipment. The coating patterns on the TiO₂ thin film are changed by adjusting the applied voltages of the ESS system. The geometry of the coating patterns is observed by a charge-coupled device (CCD) camera. The TiO₂ thin film is fabricated by controlling the electric field which allows a uniform color distribution to be obtained with a high dyeing capacity. The colored TiO₂ thin films are compared with those obtained using a conventional immersed dye solution by means of an UV–vis spectrometer. The performance of this novel coloring process was confirmed by measuring I–V curve characteristics.     

Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation

The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current.     

CO oxidation of bare and TiO2-coated NiO-Ni(OH)2 nanoparticles

CO oxidation reactivity of bare and TiO₂-coated nanoparticles consisting of both NiO and Ni(OH)₂ surfaces was studied. For the deposition of TiO₂, atomic layer deposition was used, and formation of three-dimensional domains of TiO₂ on NiO-Ni(OH)₂ could be identified. Based on the data of X-ray Photoelectron Spectroscopy, we suggest that upon TiO₂ deposition only Ni(OH)₂ was remained on the surface, whereas NiO surface disappeared. Both CO adsorption and CO oxidation took place on NiO-Ni(OH)₂ surfaces under our experimental conditions. CO adsorption was almost completely suppressed after TiO₂ deposition, whereas CO oxidation activity was maintained to large extent. It is proposed that bare NiO cannot be active for CO oxidation, and can only uptake CO under our experimental condition, whereas hydroxylated surface of NiO can be active for CO oxidation.     

Surface structure of low-coveraged Cs on Si(0 0 1)-() system

Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83±0.05 Å from the second layer of Si(0 0 1) surface.