高氧空位简并锐钛矿TiO2半导体电子寿命的第一性原理研究

为了研究锐钛矿TiO₂晶体中高氧空位浓度对电子寿命的影响,利用基于局域密度泛函理论框架下的广义梯度近似平面波超软赝势方法, 用第一性原理对含高氧空位浓度的锐钛矿TiO₂晶体进行了结构优化处理、能带分布和态密度分布计算, 表明在温度一定和高氧空位浓度的条件下, 锐钛矿TiO₂的电子寿命随氧空位浓度的增大而减小;电子浓度的大小对电子寿命无影响.同时,锐钛矿TiO₂晶体中高氧空位浓度时,发现有莫特相变的现象. 关键词： 高氧空位 2半导体')" href="#">锐钛矿TiO₂半导体 电子寿命 第一性原理     

质子交换MgO:LiNbO3波导的双层结构

本文报导MgO:LiN_bO₃质子交换波导X射线双晶衍射和红外吸收的实验结果。这些结果表明质子交换波导由浅表面层和深表面层构成。浅表面层是一个连续应变层,有着大量随机排列的O—H—O形式的缔合OH^-基团。深表面层是一个均匀应变层,其内H⁺以自由OH^-基团形式出现。质子交换波导折射串不稳定性与双层结构中的结构驰豫密切相关。通过对质子交换过程的分析,提出两条避免双层结构的途径,其一为降低交换剂中的H⁺浓度,另一条是采用有限源工艺。     

Observation of transverse polarization asymmetries of charged pion pairs in e+e- annihilation near √s = 10.58 GeV

The interference fragmentation function translates the fragmentation of a quark with a transverse projection of the spin into an azimuthal asymmetry of two final-state hadrons. In e(+)e(-) annihilation the product of two interference fragmentation functions is measured. We report nonzero asymmetries for pairs of charge-ordered π(+)π(-) pairs, which indicate a significant interference fragmentation function in this channel. The results are obtained from a 672 fb(-1) data sample that contains 711 × 10(6) π(+)π(-) pairs and was collected at and near the Υ(4S) resonance, with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider.     

Flat supercontinuum generation covering C-band to U-band in two-stage Er/Yb co-doped double-clad fiber amplifier

Supercontinuum generation in the gain fiber in two-stage nanosecond pulse Er/Yb co-doped double-clad fiber amplifier had been demonstrated for the first time to our knowledge instead of the conventional method in which nonlinear fiber was pumped by lasers. The Er/Yb co-doped double-clad fiber acts as the gain media and nonlinear media. This route reduces the splice between fiber laser and nonlinear fiber. The supercontinuum was achieved with spectrum range from 1530 nm to beyond 1700 nm at 6 W output power covering the total C-band to U-band. From the analyzing of the spectra at different stages in the amplifiers, it can be found that it is the modulation instability in the anomalous dispersion regime that initiates the supercontinuum gereration.     

The effect of Co ion implantation on Ge1−xMnx films

Ge_1−xMn_x (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn_Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn_T-Mn_Ge-Mn_T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films.     

Collisionless bounce resonance heating in dual-frequency capacitively coupled plasmas

We present the experimental evidence of the collisionless electron bounce resonance heating (BRH) in low-pressure dual-frequency capacitively coupled plasmas. In capacitively coupled plasmas at low pressures when the discharge frequency and gap satisfy a certain resonant condition, the high energy beamlike electrons can be generated by fast sheath expansion, and heated by the two sheaths coherently, thus the BRH occurs. By using a combined measurement of a floating double probe and optical emission spectroscopy, we demonstrate the effect of BRH on plasma properties, such as plasma density and light emission, especially in dual-frequency discharges.     

First-principle study on the effect of high Li-2N co-doping on the conductivity of ZnO

Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly Li-2N co-doped supercells of Zn_0.9375Li_0.0625O_0.875N_0.125 and Zn_0.9167Li_0.0833O_0.8333N_0.1667 were constructed, and the geometry optimization for the three models was carried out. The total density of states (TDOS) and the band structures (BS) were also calculated. The calculation results showed that in the range of high doping concentration, when the co-doping concentration is more than a certain value, the conductivity decreased with the increase of co-doping concentration of Li-2N in ZnO, which agrees with the change trend of the experimental results.     

High power passively mode-locked Nd:YVO<Subscript>4</Subscript> laser using graphene oxide as a saturable absorber

We report on a passively mode-locked Nd:YVO₄ laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ.     

A simulation study of microstructure evolution during solidification process of liquid metal Ni

A molecular dynamics simulation study has been performed for the microstructure evolution in a liquid metal Ni system during crystallization process at two cooling rates by adopting the embedded atom method (EAM) model potential. The bond-type index method of Honeycutt--Andersen (HA) and a new cluster-type index method (CTIM-2) have been used to detect and analyse the microstructures in this system. It is demonstrated that the cooling rate plays a critical role in the microstructure evolution: below the crystallization temperature $T_{\rm c}$, the effects of cooling rate are very remarkable and can be fully displayed. At different cooling rates of $2.0\times10^{13}$\,K\,$\cdot$\,s$^{-1}$ and $1.0\times10^{12}$\,K\,$\cdot$\,s$^{-1}$, two different kinds of crystal structures are obtained in the system. The first one is the coexistence of the hcp (expressed by (12 0 0 0 6 6) in CTIM-2) and the fcc (12 0 0 0 12 0) basic clusters consisting of 1421 and 1422 bond-types, and the hcp basic cluster becomes the dominant one with decreasing temperature, the second one is mainly the fcc (12 0 0 0 12 0) basic clusters consisting of 1421 bond-type, and their crystallization temperatures $T_{\rm c}$ would be 1073 and 1173\,K, respectively.