A synthesis of 2-substituted 2-aminoethanol derivatives having inhibitory activity against protein kinase C.

A series of 2-aminoethanol derivatives was synthesized and their inhibitory activities against protein kinase C were investigated. Among these compounds, 2-endo-hexadecylamino-5-norbornene-2- exo-methanol (4h) and 2-endo-hexadecylamino-5-norbornene-2,3-exo-dimethanol (4i) inhibited protein kinase C at the IC50 values of 2 x 10(-5) and 1 x 10(-5) M, respectively, but not protein kinase A at a concentration of 1 x 10(-3) M. The structure-activity relationships are discussed.     

A cyclic oligophenylene containing two 1,8-naphthalene units bridged by two face-to-face biphenyl linkages exhibiting unusual strain and pi-pi interaction

1,8-[1,8-Naphthalenediylbis(4',4-biphenyldiyl)]naphthalene, a very stable strained cyclophane, has been synthesized in moderate yield using the copper-catalyzed coupling of 1, 8-bis(4-(tributylstannyl)phenyl)naphthalene. The X-ray analysis of the titled compound discloses bent p,p'-biphenylylene chains with splayed naphthalene rings, and the p,p'-biphenylylene chains located face-to-face indicate a fairly strong pi-pi interaction.     

III–V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks

The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III–V quantum large-scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III–V semiconductor-based hexagonal nanowire networks controlled by nanoscale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single-electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature.     

Structural study of self-assembled monolayers of ferrocenylalkanethiols on gold by angleresolved X-ray photoelectron spectroscopy

An angle-resolved X-ray photoelectron spectroscopic study has been performed on structures of self-assembling systems, viz ferrocenylthiols on a gold (111) crystal. The angular dependence of the intensities of photoemission reveals that ferrocenyl groups are on the outermost layer, separated from the gold substrate by hydrocarbon chains of the thiol groups.     

Polarized electron capture by3He2+ at 20–28 keV

Nuclear polarization was measured by means of beam foil spectroscopy for a³He⁺ ion produced by an electron capture process of a³He²⁺ from a polarized sodium atom in an incident energy range from 20 to 28 keV. Assuming that a polarized electron of a sodium atom is predominantly captured to the 3d orbital of a³He⁺ ion andcascades down to the 1s ground state via the 2p orbital, an alignment factorA ₀ ^col (L=2) for the 3d orbital of a³He⁺ ion was extracted by comparing the observed initial sodium polarization andfinal nuclear polarization. The observedA ₀ ^col (L=2) showed a less pronounced energy dependence andwere qualitatively reproduced by the theoretical calculation.     

Anomalous resistivity near Néel temperature due to the critical scattering: Antifferomagnet

Critical behaviour of the temperature derivative of the electrical resistivity at the Néel temperature is treated. For a small Fermi wave vector, the divergence is the same as that of the specific heat both above and below the Néel temperature. For a large Fermi wave vector, in paramagnetic region, the contributions from the critical and the other regions of q-space are of the same divergence as the specific heat but of different signs from each other. Below Néel temperature, the gap effect is the main origin of divergence.     

Anomalous magnetoresistance in heavily antimony doped germanium

Anomalous magnetoresistance in heavily antimony doped germanium is studied down to 5 mK. The experimental results is reasonably interpreted within a framework of s-d interaction with a negative exchange constant. Electrons localized in a sense of Anderson are suggested to play a role of d electrons when Coulomb correlation is introduced.