Modulation of the electronic structure of semiconducting nanotubes resulting from different metal contacts

Examined in this paper is the role of the metal electrode influencing the structure and electronic properties of semiconducting carbon nanotubes near the interface at low bias. Specifically, we present quantum-chemical calculations of finite sections of a (8,0) semiconducting single wall nanotube contacted with gold and palladium clusters. The calculations at the density functional level of theory, which included full geometry optimizations, indicate the formation of bonds between the metal atoms of the electrode and the carbon atoms of the nanotube. The local work function of the metal electrode can be expected to exhibit significant variations as a result of this bond formation. Compared to the gold-contacted nanotubes, the palladium-contacted nanotubes have a small but interesting increase in both length and diameter. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the gold-contacted nanotube are shown localized at the edges. In contrast, the HOMO and LUMO of the palladium-contacted nanotube are extended over the entire nanotube and the metal cluster contacted to it, providing thereby a better conduction path in the contact region of the electrode and the nanotube. The involvement of the highly directional d orbitals in the interactions involving the palladium cluster leads to an enhanced pi electron density in the nanotube. This enhanced pi electron density is synonymous with an improved electron transmission.     

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method

The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.     

A Surfactant Bridge Model for the Nonlinear Electrorheological Effects of Surfactant-Activated ER Suspensions

In surfactant-activated electrorheological (ER) suspensions it is observed that the ER response shows linear ER behavior (F~E(2)) at small surfactant concentrations and nonlinear ER behavior (F~E(n), n approximately 1) at large surfactant concentrations. Here, a surfactant bridge model is developed to explain the nonlinear ER behavior of surfactant-activated ER suspensions. The model shows that the formation and size of a surfactant bridge depend on various variables, especially the electric field strength, the surfactant surface tension, and the initially adsorbed amount of surfactants on particles. The predicted dependence of the formation and size of a surfactant bridge on the electric field strength and the initially adsorbed amount of surfactants is consistent with the observations. Also, the model indicates that there is a critical minimum electric field E(crit) for the formation of a surfactant bridge, and the estimated E(crit) shows good agreement with the observations. The force acting between particles is composed of the electrostatic force and force associated with surface tension. However, it is found that the contribution of the force associated with surface tension can be ignored and the electrostatic force is dominant regardless of the formation of surfactant bridges between particles. When surfactant bridges are formed between particles, the predicted force shows nonlinear ER behavior (F~E(n), n approximately 1), consistent with the observed nonlinear ER behavior at large surfactant concentrations. When no surfactant bridge is formed, the predicted force is proportional to the electric field squared (F~E(2)), consistent with the interfacial polarization. The model can successfully predict the nonlinear ER behavior at large surfactant concentrations, confirming that the nonlinear ER behavior of surfactant-activated ER suspensions arises from the observed formation of surfactant bridges between particles. Copyright 2001 Academic Press.     

Si extraction from silica in a basic polychalcogenide flux. Stabilization of Ba4SiSb2Se11, a novel mixed selenosilicate/selenoantimonate with a polar structure

An unusual compound, Ba4SiSb2Se11, was discovered from a reaction of Ba/Th/Sb/Se. It is assumed that Si was extracted from the silica reaction tube. It forms as silver needlelike crystals in the polar space group Cmc2(1) with a = 9.3981(3) A, b = 25.7192(7) A, c = 8.7748(3) A, and Z = 4. A rational synthesis has been devised at 600 degrees C. The compound is composed of Ba2+ ions stabilized between infinite one-dimensional [SiSb2Se11]8- chains running parallel to the a axis. Each chain is composed of a [SbSe2]- infinity backbone with [SiSe4]4- tetrahedra chelating every other Sb atom from the same side of the backbone. The V-shaped triselenide groups, (Se3)2-, are attached to the rest of the Sb atoms in the chain through one of their terminal Se atoms. The compound has a band gap of 1.43 eV. The Raman spectrum shows a broad shift at 247 cm-1 and a shoulder around 234 cm-1, which are related to the Se-Se vibration of the triselenide groups and/or the Si-Se vibrations of the [SiSe4]4- groups. The compound decomposes at 522 degrees C.