π π andK¯K channel coupling

We investigate the origin of the attraction in theK¯K channel around the threshold by introducing an additional channel to theππ andK¯K channels in a separable potential formalism assuming, in general, no direct interaction in theK¯K channel. To reproduce the features of the data, we find that the threshold of the additional channel is much above thef ₀(975) meson position. We show that this three-channel problem can be reduced to an effective two-channel problem where thef ₀(975) behaves as if it were aK¯K molecule bound by the coupling to the exotic channel. This picture is also supported by the fact that a single pole only, in the complexK¯K momentum plane, is associated to thef ₀(975) meson. Various physical observables, like the decay branching ratio and theK¯K scattering length, are then discussed in an effective two-channel framework.     

Special features of the radiative capture of ultracold neutrons by thin and thick layers of matter

The radiative capture of ultracold neutrons traversing thin and thick homogeneous layers of matter is analyzed. The applicability range of the formulas for the probabilities of reflection, transmission, and capture in thick layers (under certain conditions, they admit a simple interpretation—it is often quoted in the literature—that is based on the effective capture cross section, which is in inverse proportion to the velocity of a neutron in matter) is investigated, along with the conditions under which there arises the effective capture cross section.     

Statistic D-Property of Voronoi Summation Methods of Class W Q 2

We propose a general method for obtaining Tauberian theorems with remainder for one class of Voronoi summation methods for double sequences of elements of a locally convex, linear topological space. This method is a generalization of the Davydov method of C-points.     

Stress distribution in an infinite transversally isotropic body with a rigid elliptical inclusion in a uniform thermal flux

Universidade de Beira Interior, Portugal: and S. P. Timoshenko Institute of Mechanics, National Academy of Sciences of the Ukraine, Kiev. Translated from Prikladnaya Mekhanika, Vol. 31. No. 11, pp. 3–10, November, 1995.     

Approximation by polynomials with small coefficients

Translated from Matematicheskie Zametki, Vol. 57, No. 1, pp. 150–153, January, 1995.     

Interaction between large and small signals in a resonant transmission line based on magnetostatic waves

The influence of a large signal on the characteristics of a small signal near the frequency of the former is experimentally studied for the case of their simultaneous propagation through a resonant transmission line based on backward volume magnetostatic waves. The effects observed are caused by the excitation of spin waves in a ferromagnetic film at different large-signal frequencies and by the back influence of excited spin-wave packets on the amplitude and phase characteristics of the small signal.     

An invariance of geometric mean with respect to Lagrangian means

The invariance of the geometric mean G with respect to the Lagrangian mean-type mapping (Lf,Lg), i.e. the equation G○(Lf,Lg)=G, is considered. We show that the functions f and g must be of high class regularity. This fact allows to reduce the problem to a differential equation and determine the second derivatives of the generators f and g.     

Monotonic solutions of a quadratic integral equation of fractional order

In the paper we indicate an error made in the proof of the main result of the paper [M.A. Darwish, On quadratic integral equation of fractional orders, J. Math. Anal. Appl. 311 (2005) 112-119]. Moreover, we provide correct proof of a slightly modified version of the mentioned result. The main tool used in our proof is the technique associated with the Hausdorff measure of noncompactness.     

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.