Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

We report a strongly nonlinear pressure dependence of the band gaps and large downward shifts of the conduction band edges as functions of composition in ZnS xTe (1-x) and ZnSe (y)Te (1-y) alloys. The dependencies are explained by an interaction between localized A1 symmetry states of S or Se atoms and the extended states of the ZnTe matrix. These results, combined with previous studies of III-N-V materials define a new, broad class of semiconductor alloys in which the introduction of highly electronegative atoms leads to dramatic modifications of the conduction band structure. The modifications are well described by the recently introduced band anticrossing model.     

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO₂ film were examined using local probe-based measurements. Scanning probe-based current–voltage (I–V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.     

Establishing norms for age-related changes in proton T1 of human brain tissue in vivo

The goal of this study was to determine the expected normal range of variation in spin-lattice relaxation time (T₁) of brain tissue in vivo, as a function of age. A previously validated precise and accurate inversion recovery method was used to map T₁ transversely, at the level of the basal ganglia, in a study population of 115 healthy subjects (ages 4 to 72; 57 male and 58 female). Least-squares regression analysis shows that T₁ varied as a function of age in pulvinar nucleus (R² = 56%), anterior thalamus (R² = 51%), caudate (R² = 50%), frontal white matter (R² = 47%), optic radiation (R² = 39%), putamen (R² = 36%), genu (R² = 22%), occipital white matter (R² = 20%) (all p < 0.0001), and cortical gray matter (R² = 53%) (p < 0.001). There were no significant differences in T₁ between men and women. T₁ declines throughout adolescence and early adulthood, to achieve a minimum value in the fourth to sixth decade of life, then T₁ begins to increase. Quantitative magnetic resonance imaging provides evidence that brain tissue continues to change throughout the lifespan among healthy subjects with no neurologic deficits. Age-related changes follow a strikingly different schedule in different brain tissues; white matter tracts tend to reach a minimum T₁ value, and to increase again, sooner than do gray matter tracts. Such normative data may prove useful for the early detection of brain pathology in patients.     

Quantum Dynamics of Systems Connected by a Canonical Transformation

Quantum Hamiltonian systems corresponding to classical systems related by a general canonical transformation are considered. The differential equation to find the unitary operator, which corresponds to the canonical transformation and connects quantum states of the original and transformed systems, is obtained. The propagator associated with their wave functions is found by the unitary operator. Quantum systems related by a linear canonical point transformation are analyzed. The results are tested by finding the wave functions of the under-, critical-, and over-damped harmonic oscillator from the wave functions of the harmonic oscillator, free-particle system, and negative harmonic potential system, using the unitary operator to connect them, respectively.     

Nanosecond laser ablation and deposition of silicon

Nanosecond-pulsed KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) lasers were used to ablate a polycrystalline Si target in a background pressure of <10⁻⁴ Pa. Si films were deposited on Si and GaAs substrates at room temperature. The surface morphology of the films was characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Round droplets from 20 nm to 5 μm were detected on the deposited films. Raman Spectroscopy indicated that the micron-sized droplets were crystalline and the films were amorphous. The dependence of the properties of the films on laser wavelengths and fluence is discussed.     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Nonlinear optical characteristics of monolayer MoSe2

In this study, we utilized picosecond pulses from an Nd:YAG laser to investigate the nonlinear optical characteristics of monolayer MoSe₂. Two‐step growth involving the selenization of pulsed‐laser‐deposited MoO₃ film was employed to yield the MoSe₂ monolayer on a SiO₂/Si substrate. Raman scattering, photoluminescence (PL) spectroscopy, and atomic force microscopy verified the high optical quality of the monolayer. The second‐order susceptibility χ⁽²⁾ was calculated to be ～50 pm V^?1 at the second harmonic wavelength ～810 nm, which is near the optical gap of the monolayer. Interestingly, our wavelength‐dependent second harmonic scan can identify the bound excitonic states including negatively charged excitons much more efficiently, compared with the PL method at room temperature. Additionally, the MoSe₂ monolayer exhibits a strong laser‐induced damage threshold ～16 GW cm^?2 under picosecond‐pulse excitation_. Our findings suggest that monolayer MoSe₂ can be considered as a promising candidate for high‐power, thin‐film‐based nonlinear optical devices and applications.     

In vivo study on the protection of indole‐3‐carbinol (I3C) against the mouse acute alcoholic liver injury by micro‐Raman spectroscopy

Micro‐Raman spectroscopy (MRS) was utilized for the first time to evaluate the effect of indole‐3‐carbinol (I3C) on acute alcoholic liver injury in vivo. In situ Raman analysis of tissue sections provided distinct spectra that can be used to distinguish alcoholic liver injury as well as ethanol‐induced liver fibrosis from the normal state. Sixteen mice with liver diseases including acute liver injury and chronic liver fibrosis, and eight mice with normal liver tissues, and eight remedial mice were studied employing the Raman spectroscopic technique in conjunction with biomedical assays. The biochemical changes in mouse liver tissue when liver injury/fibrosis occurs such as the loss of reduced glutathione (GSH), and the increase of collagen (α‐helix protein) were observed by MRS. The intensity ratio of two Raman peaks (I₁₄₅₀/I₆₆₆) and in combination with statistical analysis of the entire Raman spectrum was found capable of classifying liver tissues with different pathological features. Raman spectroscopy therefore is an important candidate for a nondestructive in vivo screening of the effect of drug treatment on liver disease, which potentially decreases the time‐consuming clinical trials. Copyright © 2008 John Wiley & Sons, Ltd.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp