Effect of bismuth nanolayers on the oriented growth of fullerene C<Subscript>60</Subscript> on an amorphous substrate

The effect of a bismuth sublayer with an effective thickness of 0.5 to 4 nm on the structure of C₆₀ fullerene films grown on amorphous substrates (silicon covered with a natural oxide layer; glass) using the quasi-closed-volume method is studied. An x-ray diffraction study of fullerene films showed that the intensity ratio between the (220) and (111) peaks depends nonmonotonically on the sublayer thickness. In the bismuth sublayer thickness range 0.5–2.0 nm, fullerene films are found to exhibit a growth texture with the 〈110〉 axis; the average crystallite size was ～20 µm. The quality of the texture can be improved by varying the fullerene growth temperature.     

Ultrashort electron beam and volume high-current discharge in air under the atmospheric pressure

Conditions are studied under which an electron beam and a volume discharge with a subnanosecond rise time of a voltage pulse are produced in air under atmospheric pressure. It is shown that the electron beam appears in a gas-filled diode at the front of the voltage pulse in ∼0.5 ns, has a half-intensity duration of ≤0.4 ns and an average electron energy of ∼0.6 of the voltage across the gas-filled diode, and terminates when the voltage across the gap reaches its maximum value. The electron beam with an average electron energy of 60 to 80 keV and a current amplitude of ≥70 A is obtained. It is assumed that the electron beam is formed from electrons produced in the gap due to gas ionization by fast electrons when the intensity of the field between the front of the expanding plasma cloud and the anode reaches its critical value. A nanosecond volume discharge with a specific power input of ≥400 MW/cm³, a density of the discharge current at the anode of up to 3 kA/cm², and specific energy deposition of ∼1 J/cm³ over 3 to 5 ns is created.     

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs₂ are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.     

Dielectric properties of liquid crystals of the cyano derivative compounds with different fragments in the molecular core

This paper reports on the results of investigations into the influence of variations in the chemical composition of the aromatic core of cyano-containing molecules of liquid crystals on their dielectric properties in the frequency range 1–2000 MHz. It is shown that the dispersion of the longitudinal permittivity is adequately described by the sum of two Debye processes with different weighting factors and relaxation times. The frequency dependence of the transverse permittivity is well approximated by the Debye process with a continuous distribution of relaxation times in a specified range. It is established that the replacement of one benzene ring in the biphenyl core of the 5CB liquid-crystal molecule by a cyclohexane (or bicyclooctane) fragment leads to a considerable decrease in both relaxation times for the longitudinal permittivity, a change in the low-frequency limit of the relaxation time range for the transverse permittivity, and the evolution of the frequency dependence of the dielectric anisotropy.     

Elasticity and inelasticity of biomorphic silicon carbide ceramics

The effect of the vibration strain amplitude on the Young modulus and ultrasonic absorption (internal friction) in biomorphic SiC ceramics is investigated in the temperature range 116–296 K. The biomorphic SiC ceramics is prepared through pyrolysis of eucalyptus with subsequent infiltration of silicon. It is demonstrated that the vibration loading of samples in air and under vacuum is accompanied by a number of unexpected effects. The behavior of the studied ceramics is governed by at least two mechanisms, which, to a large extent, are responsible for the elastic and inelastic properties of the material. One mechanism is associated with the adsorption-desorption of environmental molecules (hypothetically, owing to the presence of pores and residual carbon), and the other mechanism involves microplastic deformation due to the motion of dislocations or other (similar) structural units.     

Generation of a homogeneous plasma and wide ion beams in a penning system with a nonequipotential cathode

A study is made of the possibility of controlling the spatial distribution of the degree of ionization in a modified Penning cell with a cathode divided into several sections that are at different potentials. It is shown that an almost uniform plasma can be produced when applying an optimal potential of the control electrode. This enables the generation of wide ion beams in this system. An ion extraction efficiency of several tens of percent is achieved, which is substantially higher than in conventional ion sources.     

Associated φΛ0 production in the EXCHARM experiment

The features of the associated production of φ mesons with Λ⁰ hyperons in neutron-carbon interactions were investigated. The experiment was performed with the aid of the EXCHARM spectrometer at the Serpukhov accelerator in a neutron beam of energy in the interval 20–70 GeV. The differential cross section for inclusive associated φΛ⁰ production was measured.