Die Präparation von GaAs-Substraten,untersucht mit Reflexionselektroneninterferenzen

The RHEED-method is used for the examination and characterization of gallium arsenide substrates. It is shown the use of both beam focussing at the object and at the photoplate in studying this subject. It was found that the samples after abrasive cutting and machine lapping give interference patterns of mechanical damaged surfaces with characteristical features. Lap polished surfaces give Kikuchi pattern and a rel-rod pattern of perfect single crystal which is nearly smooth in the atomic level. Critical remarks are given on the Kikuchi pattern as a feature of perfection of the crystal. Results on the penetration depth of rough defects due to machine lapping are in good agreement with data from literature.     

Expanding the hydride chemistry: antiperovskites A3MO4H (A = Rb,Cs; M = Mo,W) introducing the transition oxometalate hydrides

The four compounds A₃MO₄H (A = Rb, Cs; M = Mo, W) are introduced as the first members of the new material class of the transition oxometalate hydrides. The compounds are accessible via a thermal synthesis route with carefully controlled conditions. Their crystal structures were solved by neutron diffraction of the deuterated analogues. Rb₃MoO₄D, Cs₃MoO₄D and Cs₃WO₄D crystallize in the antiperovskite-like K₃SO₄F-structure type, while Rb₃WO₄D adopts a different orthorhombic structure. ²H MAS NMR, Raman spectroscopy and elemental analysis prove the abundance of hydride ions next to oxometalate ions and experimental findings are supported by quantum chemical calculations. The tetragonal phases are direct and wide band gap semiconductors arising from hydride states, whereas Rb₃WO₄H shows a unique, peculiar valence band structure dominated by hydride states.

The synthesis, structures and electronic properties of the first four heteroanionic compounds containing both hydride and transition oxometalate ions are reported.     

Polysaccharide Based Vaccines for The Prevention of Pneumococcal Infections

1. INTRODUCTION

Streptococcus pneumoniae remains an important cause of infections in this end of the 20th century and is responsible for invasive diseases - pneumonia, meningitis, bacteremia, septicemia - as well as for noninvasive diseases such as pharyngitis, conjunctivitis, otitis media.^1,2     

Trap centers in Au-implanted MOS structures

Trap centers in the Si-SiO₂ interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 10¹²–3 × 10¹³ cm^–2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E _v +0.35 eV), the Au-acceptor (E _v +0.53 eV), and the Au-Fe complex (E _v +0.45 eV). The trap concentration profiles show that the Si-SiO₂ interface affects the Au concentration in a depth range of 1 m from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 10¹⁵ cm^–3.