A novel method for the preparation of T3 free plasma/serum for routine RIA

A novel method to eliminate T₃ from gross sera/plasma based on prior treatment with 8-anilino-1-naphthalene sulphonic acid has been standardized. This method is rapid with a minimum loss of protein and uses only small quantities of charcoal. The treated sera have been tested for acceptance in the RIA system for routine assays.     

Pulsed reactive crossed beam laser ablation of La0.6Ca0.4CoO3 using O: Where does the oxygen come from?

The composition of thin perovskite films, especially the oxygen content, is a crucial parameter which influences many physical properties, such as conductivity and catalytic activity. Films produced by pulsed laser deposition are normally annealed in an oxygen atmosphere after deposition to achieve a desired oxygen content. In pulsed reactive crossed beam laser ablation, no annealing step is necessary, but a fundamental question regarding this deposition technique is still open: where does the oxygen in the films come from?There are three possibilities, i.e. from the target, from the gas background, or from the gas pulse. To answer this question two experiments were performed: ¹⁸O₂ was used during the deposition process as background gas with ¹⁶O anions in the target and ¹⁶O₂ gas pulse, and a ¹⁸O₂ gas pulse with ¹⁶O from the target and background. These experiments revealed that the quantification of the oxygen origin is only possible, when no oxygen exchange occurs at the deposition temperature. The films are characterized after deposition by elastic recoil detection analysis (ERDA) to determine the ¹⁶O/¹⁸O ratio. Experiments with different oxidizing species in the gas pulse (N₂O and O₂) confirm that the oxidizing potential (N₂O > O₂) as well as the number of molecules are important.     

Nusselt number correlations for heat transfer to small spheres in thermal plasma flows

Seven different equations predicting heat transfer rates to small spheres in plasma flows are examined considering argon and nitrogan as plasma gases from 300 to 21,000 K at 1 atm. For argon there is a general consensus up to 9000 K, beyond which wide deviations in behavior occur. For nitrogen, the seven correlations are in good agreement up to 4000 K, but show substantial deviations beyond this value. Comparisons with the sparsely available experimental data are made for argon from 300 to 17,000 K and for nitrogen up to 5500 K. Disagreement between the various correlations and experiment can exceed one order of magnitude.     

Nonperturbative inconsistency of stochastic quantization in odd dimensions

It is shown that a stochastically-quantized theory of interacting fermion and gauge fields in odd spacetime dimensions can be renormalized, preserving both gauge- and parity-invariance. Thus, the pertinent parity-violating anomalies are not reproduced by the stochastic quantization. Moreover, this theory does not possess a nonperturbative equilibrium limit unless one introduces an appropriate parity-violating counterterm. We conclude that an odd-dimensional gauge theory with fermions cannot be inconsistently quantized in the stochastic scheme unless the parity-violating anomales cancel.     

Reduction of the concentration of slow insulator states in SiO2/InP-MIS structures

The well-known drift phenomena usually found in the InP-metal-insulator-semiconductor (MIS) devices can be explained by the assumption of a spatial and energetical distribution of slow states located within the insulator. The concentration of these states can be reduced by far more than one order of magnitude if a suitable technique of insulator deposition is applied. In this paper we will discuss the influence of the deposition temperature, the spatial separation of sample and plasma (“indirect plasma method”), and the addition of phosphorus into the reaction chamber during the initial period of insulator deposition on the properties of n-type and p-type InP-MIS capacitors. Plasma-enhanced chemical vapor deposited silicon dioxide is used as insulator. The samples were characterized by means of capacitance/voltage (C(V)) and deep level transient spectroscopy (DLTS) measurements. Only minor hysteresis of the C(V) curves and concentrations of slow insulator states of only (1–2)×10¹¹ cm^-2 eV^-1 are measured for the best of our samples.     

High-throughput concept for tailoring switchable mirrors

The optical properties, the switching kinetics and the lifetime of hydrogen switchable mirrors based on Mg-Ni alloys are determined with particular regard to the composition of the optically active metal-hydride layer in combination with the thickness of the catalytic capping layer. For this, a high-throughput experiment is introduced. The switching kinetics and the reversibility of switchable mirrors are strongly thickness dependent, though the details hinge on the fine structure of the clustered capping layer. Therefore, the kinetics is correlated with the surface structures of Pd on Mg_yNi_1−y as investigated by scanning tunneling microscopy. The results are explained by the so-called strong metal-support interaction (SMSI) state, characterized by a complete encapsulation of the capping layer clusters by oxidized species originating from the support. The SMSI-effect is less important with increasing Pd-layer thickness, and is suppressed by a good wetting of the Pd-clusters on the optically active film. This explains the critical thickness for the catalyzed hydrogen uptake observed in many switchable mirror systems. Moreover, the degradation of the kinetics during cycling is found to depend on the Pd-layer thickness and on the gas environment. Only films, covered with at least 15 nm Pd, show small degradation caused by the SMSI-effect. The SMSI-effect is partly reversible: after changing the gas environment from hydrogen to oxygen, the oxide on the Pd-clusters can be partly removed.